Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts
Abstract
:1. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Lee, I.-G.; Jo, H.-B.; Baek, J.-M.; Lee, S.-T.; Choi, S.-M.; Kim, H.-J.; Park, W.-S.; Yoo, J.-H.; Ko, D.-H.; Kim, T.-W.; et al. Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts. Electronics 2022, 11, 2744. https://doi.org/10.3390/electronics11172744
Lee I-G, Jo H-B, Baek J-M, Lee S-T, Choi S-M, Kim H-J, Park W-S, Yoo J-H, Ko D-H, Kim T-W, et al. Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts. Electronics. 2022; 11(17):2744. https://doi.org/10.3390/electronics11172744
Chicago/Turabian StyleLee, In-Geun, Hyeon-Bhin Jo, Ji-Min Baek, Sang-Tae Lee, Su-Min Choi, Hyo-Jin Kim, Wan-Soo Park, Ji-Hoon Yoo, Dae-Hong Ko, Tae-Woo Kim, and et al. 2022. "Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts" Electronics 11, no. 17: 2744. https://doi.org/10.3390/electronics11172744