Search Results (213)

This paper presents the first hybrid supply modulator (HSM) designed for envelope tracking power amplifiers (ET-PAs) in base station applications. The focus is on a rail-to-rail Class-AB linear amplifier (LA) optimized for high-voltage and wide-bandwidth operation. The LA is designed using 130 nm BCD technology, utilizing Laterally Diffused Metal-Oxide Semiconductor (LDMOS) transistors for high-voltage operation and incorporating shielding MOSFETs to protect the low-voltage devices. The circuit utilizes dual power supply domains (5 V and 30 V) to improve power efficiency. The proposed LA achieves a bandwidth of 100 MHz and a slew rate of +1003/−852 V/$\mathsf{\mu }\mathrm{s}$, with a quiescent power consumption of 0.89 W. Transient simulations using a 50 MHz bandwidth 5G NR envelope input demonstrate that the proposed HSM achieves a power efficiency of 83%. Consequently, the proposed HSM supports high-output (100 W) wideband 5G NR transmission with enhanced efficiency. Full article

The stable operation of micromachine systems relies on reliable power management, where DC-DC converters provide energy with high efficiency to extend operational endurance. However, these converters also constitute significant electromagnetic interference (EMI) sources that may interfere with the normal functioning of micro-electromechanical systems. This paper proposes a boost converter utilizing Pulse Width Modulation (PWM) with peak current mode control to address the EMI issues inherent in the switching operation of DC-DC converters. The converter incorporates a Hybrid Spread Spectrum (HSS) technique to effectively mitigate EMI noise. The HSS combines a 1.2 MHz pseudo-random spread spectrum with a 9.4 kHz triangular periodic spread spectrum. At a standard switching frequency of 2 MHz, the spread spectrum range is set to ±7.8%. Simulations conducted using a 0.5 μm Bipolar Complementary Metal-Oxide-Semiconductor Double-diffused Metal-Oxide-Semiconductor (BCD) process demonstrate that the HSS technique reduces EMI around the switching frequency by 12.29 dBμV, while the converter’s efficiency decreases by less than 1%. Full article

Understanding how crystal structure influences electronic properties is crucial for discovering new functional materials. In this study, we utilized Kernel Principal Component Analysis (KPCA) to classify and analyze the Density of States (DOS) of transition metal sulfide (TMS) compounds, particularly copper-based sulfides. By mapping high-dimensional DOS data into a lower-dimensional space, we identify clusters corresponding to different crystal systems and detect outliers with significant deviations from their expected groups. These outliers exhibit unusual electronic configurations, suggesting potential applications in semiconductors, thermoelectric devices, and optoelectronic devices. Projected Density of States (PDOS) analysis further reveals how orbital hybridization governs the electronic structure of these materials, highlighting key differences between structurally similar compounds. Additionally, we analyze phase stability through inter-cluster distance measurements, identifying potential phase transformations between closely related structures. The implications for this work in terms of modifying chemistries and generalized DOS predictions are discussed. Full article

The scope of this study was to evaluate the response of Ce-doped gadolinium aluminum gallium garnet (GAGG:Ce) crystalline scintillator under medical X-ray irradiation for medical imaging applications. A 10 × 10 × 10 mm³ crystal was irradiated at X-ray tube voltages ranging from 50 kVp to 150 kVp. The crystal’s compatibility with several commercially available optical photon detectors was evaluated using the spectral matching factor (SMF) along with the absolute efficiency (AE) and the effective efficiency (EE). In addition, the energy-absorption efficiency (EAE), the quantum-detection efficiency (QDE) as well as the zero-frequency detective quantum detection efficiency DQE(0) were determined. The crystal demonstrated satisfactory AE values as high as 26.3 E.U. (where 1 E.U. = 1 μW∙m⁻²/(mR∙s⁻¹)) at 150 kVp, similar, or in some cases, even superior to other cerium-doped scintillator materials. It also exhibits adequate DQE(0) performance ranging from 0.99 to 0.95 across all the examined X-ray tube voltages. Moreover, it showed high spectral compatibility with commonly used photoreceptors in modern day such as complementary metal–oxide–semiconductors (CMOS) and charge-coupled-devices (CCD) with SMF values of 0.95 for CCD with broadband anti-reflection coating and 0.99 for hybrid CMOS blue. The aforementioned properties of this scintillator material were indicative of its superior efficiency in the examined medical energy range, compared to other commonly used scintillators. Full article

Recent measurements of the band properties of AlN and GaN by fluorescence yield absorption and soft X-ray emission spectroscopies revealed that their valence band (VB) is composed of two separate subbands. The upper VB subband of GaN is composed of gallium sp and nitrogen p orbitals; the lower subband consists of metal d and nitrogen s orbitals. These findings were confirmed by extensive ab initio simulations. These results are not consistent with the standard tetrahedrally coordinated semiconductors, which are bonded by sp³-hybridized orbitals of metal and nonmetal atoms. The new analysis techniques and ab initio simulations create a new picture, allowing the calculation of overlap integrals to determine the bond order in these crystals. According to these results, bonding occurs between resonant p-states of nitrogen and sp³-hybridized metal orbitals in tetrahedral nitrides, allowing tetrahedral symmetry to be maintained. A similar resonant bonding mechanism is observed in hexagonal BN, where the p orbitals of nitrogen create three resonant states necessary for maintaining the planar symmetry of the lattice. In addition, nonresonant $\pi$-type bonds in BN are created by the overlap of $p_z$ orbitals of boron and nitrogen. BN bonding differs from that in graphene, where carbon states are fully sp²-hybridized. Additionally, $\pi$-type bonds in graphene have no ionic contributions, which leads to the formation of Dirac states with linear dispersion close to the K point, closing the band gap. Full article

Photocatalytic hydrogen (H₂) production offers a promising solution to energy shortages and environmental challenges by converting solar energy into chemical energy. Hydrogen, as a versatile energy carrier, can be generated through photocatalysis under sunlight or via electrolysis powered by solar or wind energy. However, the advancement of photocatalysis is hindered by the limited availability of effective visible light-responsive semiconductors and the challenges of charge separation and transport. To address these issues, researchers are focusing on the development of novel nanostructured semiconductors and composite materials that can enhance photocatalytic performance. In this paper, we provide an overview of the advanced photocatalytic materials prepared so far that can be activated by sunlight, and their efficiency in H₂ production. One of the key strategies in this research area concerns improving the separation and transfer of electron–hole pairs generated by light, which can significantly boost H₂ production. Advanced hybrid materials, such as organic–inorganic hybrid composites consisting of a combination of polymers with metal oxide photocatalysts, and the creation of heterojunctions, are seen as effective methods to improve charge separation and interfacial interactions. The development of Schottky heterojunctions, Z-type heterojunctions, p–n heterojunctions from nanostructures, and the incorporation of nonmetallic atoms have proven to reduce photocorrosion and enhance photocatalytic efficiency. Despite these advancements, designing efficient semiconductor-based heterojunctions at the atomic scale remains a significant challenge for the realization of large-scale photocatalytic H₂ production. In this review, state-of-the-art advancements in photocatalytic hydrogen production are presented and discussed in detail, with a focus on photocatalytic nanostructures, heterojunctions and hybrid composites. Full article

This paper proposes a hybrid energy-harvesting chip that utilizes both radio-frequency (RF) energy and solar energy for low-power applications and extended service life. The key contributions include a wide input power range, a compact chip area, and a high maximum power conversion efficiency (PCE). Solar energy is a clean and readily available source. The hybrid energy harvesting system has gained popularity by combining RF and solar energy to improve overall energy availability and efficiency. The proposed chip comprises a matching network, rectifier, charge pump, DC combiner, overvoltage protection circuit, and low-dropout voltage regulator (LDO). The matching network ensures maximum power delivery from the antenna to the rectifier. The rectifier circuit utilizes a cross-coupled differential drive rectifier to convert radio frequency energy into DC voltage, incorporating boosting functionality. In addition, a solar harvester is employed to provide an additional energy source to extend service time and stabilize the output by combining it with the radio-frequency source using a DC combiner. The overvoltage protection circuit safeguards against high voltage passing from the DC combiner to the LDO. Finally, the LDO facilitates the production of a stable output voltage. The entire circuit is simulated using the Taiwan Semiconductor Manufacturing Company 0.18 µm 1P6M complementary metal–oxide–semiconductor standard process developed by the Taiwan Semiconductor Research Institute. The simulation results indicated a rectifier conversion efficiency of approximately 41.6% for the proposed radio-frequency-energy-harvesting system. It can operate with power levels ranging from −1 to 20 dBm, and the rectifier circuit’s output voltage is within the range of 1.7–1.8 V. A 0.2 W monocrystalline silicon solar panel (70 × 30 mm²) was used to generate a supplied voltage of 1 V. The overvoltage protection circuit limited the output voltage to 3.6 V. Finally, the LDO yielded a stable output voltage of 3.3 V. Full article

Integrated photonic biosensors are revolutionizing lab-on-a-chip technologies by providing highly sensitive, miniaturized, and label-free detection solutions for a wide range of biological and chemical targets. This review explores the foundational principles behind their operation, including the use of resonant photonic structures such as microring and whispering gallery mode resonators, as well as interferometric and photonic crystal-based designs. Special focus is given to the design strategies that optimize light–matter interaction, enhance sensitivity, and enable multiplexed detection. We detail state-of-the-art fabrication approaches compatible with complementary metal-oxide-semiconductor processes, including the use of silicon, silicon nitride, and hybrid material platforms, which facilitate scalable production and seamless integration with microfluidic systems. Recent advancements are highlighted, including the implementation of optofluidic photonic crystal cavities, cascaded microring arrays with subwavelength gratings, and on-chip detector arrays capable of parallel biosensing. These innovations have achieved exceptional performance, with detection limits reaching the parts-per-billion level and real-time operation across various applications such as clinical diagnostics, environmental surveillance, and food quality assessment. Although challenges persist in handling complex biological samples and achieving consistent large-scale fabrication, the emergence of novel materials, advanced nanofabrication methods, and artificial intelligence-driven data analysis is accelerating the development of next-generation photonic biosensing platforms. These technologies are poised to deliver powerful, accessible, and cost-effective diagnostic tools for practical deployment across diverse settings. Full article

Hybrid nanostructures can be engineered to exhibit superior functionality beyond the level attainable from each of the constituent nanomaterials by synergistically integrating their unique properties. In this work, we designed individual hybrid nanorods (NRs) of ZnO–Ag in different heterojunction configurations where each hybrid NR consists of a single ZnO NR forming a junction with a single Ag NR. We subsequently employed the ZnO–Ag hybrid NRs in the fluorescence detection of the model chemical and biological analytes, rhodamine 6G (R6G), and tumor necrosis factor-α (TNF-α), that undergo simple as well as more complex immunoreaction steps on the hybrid NRs. We determine how parameters such as the analyte concentration, ZnO–Ag heterojunction configuration, and NR length can influence the fluorescence signals, enhancement factors (EFs), as well as changes in EFs (%EFs) at different positions on the hybrid NRs. We provide much needed insights into the fluorescence enhancement capability of single hybrid NR systems using a signal source located external to the NRs. Moreover, we identify key consideration factors that are critical to the design and optimization of a hybrid NR platform for achieving high signal enhancements. We show that higher EFs are consistently observed from the junction relative to other positions in a given hybrid NR, from the end–end relative to other heterojunction configurations, and from longer than shorter ZnO NRs. Our research efforts demonstrate that the synergistic interplay of the two component NRs of ZnO and Ag escalates the fluorescence detection capability of the ZnO–Ag hybrid NR. A superior enhancement level surpassing those attainable by each component NR alone can be obtained from the hybrid NR. Hence, our work further substantiates the potential utility of individual semiconductor-metal hybrid NRs for highly miniaturized and ultra-trace level detection, especially by leveraging the critical consideration factors to achieve a higher detection capability. Full article

The communication module is crucial for control systems. Under thermal, electrical, and mechanical stresses, sensitive digital and analog components may degrade in performance or fail, compromising the module’s long-term stability. Existing reliability-prediction methods, however, do not fully leverage multi-physics simulations to model stress-induced failure modes, leading to limited confidence in their predictions. This article proposes a systematic method to enhance the reliability prediction of mixed-signal electronic systems under complex operating conditions. First, we identify the key Complementary Metal-Oxide-Semiconductor (CMOS) chips and their associated failure mechanisms. Then, we use an I/O Buffer Information Specification-based (IBIS-based) topology to build a hybrid-precision simulation that models electrical stress. A Verilog-SPICE framework is employed to simulate component degradation and failure modes. Subsequently, by including mission profiles, we perform a simplified multi-physics coupling analysis to evaluate the effects of temperature and mechanical stress on failure mechanisms. Finally, the Physics of Failure models of components are integrated to derive the reliability curve of the module, and targeted optimization strategies are proposed. Compared to conventional methods, the method combines hybrid-precision simulation with multi-physics coupling modeling, improving the accuracy of critical failure modes. This method enhances the quantitative product reliability analysis and provides valuable support for optimized design. Full article

Semiconductor photonic nanowires are critical components for nanoscale light manipulation in integrated photonic and electronic devices. Optimizing their optical performance requires enhanced photon conversion efficiency, for which a promising solution is to combine semiconductors with noble metals, using the surface plasmon resonance of noble metals to enhance the photon absorption efficiency. Here, we report plasmon-enhanced light emission in a hybrid nanowire device composed of perovskite semiconductor nanowires and silver nanoparticles formed using superfluid helium droplets. A cesium lead halide perovskite-based four-layer structure (CsPbBr₃/PMMA/Ag/Si) effectively reduces the metal’s plasmonic losses while ensuring efficient surface plasmon–photon coupling at moderate power. Microphotoluminescence and time-resolved spectroscopy techniques are used to investigate the optical properties and emission dynamics of carriers and excitons within the hybrid device. Our results demonstrate an intensity enhancement factor of 29 compared with pure semiconductor structures at 4 K, along with enhanced carrier recombination dynamics due to plasmonic interactions between silver nanoparticles and perovskite nanowires. This work advances existing approaches for exciting photonic nanowires at low photon densities, with potential applications in optimizing single-photon excitations and emissions for quantum information processing. Full article

Photothermal catalytic dry reforming of methane (DRM) technology not only achieves artificial photosynthesis of fuels but also decreases greenhouse effects. The highly efficient photothermal DRM reaction depends on elaborate catalysts. Therefore, unraveling the relationship between property and catalytic efficiency of catalysts is crucial. In this study, a series of Rh-loaded Ga₂O₃-Nb₂O₅ (Rh/Ga_xNb_y) were designed via a simple in situ reduction strategy using Rh₂O₃/Ga₂O₃-Nb₂O₅ as a precursor. After an accurate material characterization, as a proof-of-principle, the photothermal efficiency could be attributed to (i) the amount of medium and strong basic sites on the catalyst surface; (ii) the number of electron–hole pairs upon visible light irradiation. Accordingly, this study used Rh/Ga_xNb_y as a model hybrid catalyst to clarify the relationship between the fundamental properties and photothermal catalytic DRM activities, thus providing guidance for the rational design and fabrication of efficient metal/semiconductor composite catalysts for DRM implementation. Full article

Doping rare-earth metals into semiconductor germanium clusters can significantly enhance the stability of these clusters while introducing novel and noteworthy optical properties. Herein, a series of EuGe_n⁻ (n = 7–20) clusters and their structural and nonlinear optical properties are investigated via the ABCluster global search technique combined with the double-hybrid density functional theory mPW2PLYP. The structure growth pattern can be divided into two stages: an adsorption structure and a linked structure (when n = 7–10 and n = 11–20, respectively). In addition to simulating the photoelectron spectra of the clusters, their various properties, including their (hyper)polarizability, magnetism, charge transfer, relative stability, and energy gap, are identified. According to our examination, the EuGe₁₃⁻ cluster exhibits a significant nonlinear optical response of the β_tot value of 7.47 × 10⁵ a.u., and is thus considered a promising candidate for outstanding nonlinear optical semiconductor nanomaterials. Full article

The most commonly used optical oxygen sensing materials are phosphorescent molecules and functionalized nanocrystals. Many exploration studies on oxygen sensing have been carried out using the fluorescence or phosphorescence of semiconductor nanomaterials. Lead halide perovskite nanocrystals, a new type of ionic semiconductor, have excellent optical properties, making them suitable for use in optoelectronic devices. They also show promising applications in analytical sensing and biological imaging, especially manganese-doped perovskite nanocrystals for optical oxygen sensing. As a class of materials with diverse sources, copper iodide cluster semiconductors have rich structural and excellent luminescent properties, and have attracted attention in recent years. These materials have adjustable optical properties and sensitive stimulus response properties, showing great potential for optical sensing applications. This review paper provides a brief introduction to traditional oxygen sensing using organic molecules and introduces research on oxygen sensing using novel luminescent semiconductor materials, perovskite metal halides and copper iodide hybrid materials in recent years. It focuses on the mechanism and application of these materials for oxygen sensing and evaluates the future development direction of these materials for oxygen sensing. Full article

Silicon-based Hall application-specific integrated circuit (ASIC) chips have become very successful, making them ideal for flexible electronic and sensor devices. In this study, we designed, simulated, and tested flexible hybrid integration angle sensors that can be made using complementary metal-oxide-semiconductor (CMOS) technology. These sensors are manufactured on a 100 µm-thick flexible polyimide (PI) membrane, which is suitable for large-scale production and has strong potential for industrial use. The Hall sensors have a sensitivity of 0.205 V/mT. Importantly, their sensitivity remains stable even after being bent to a minimum radius of 10 mm and after undergoing 100 bending cycles. The experiment shows that these flexible hybrid integration devices are promising as angle sensors. Full article