Search Results (562)

The development of an integrated circuit faces the challenge of the physical limit of Moore’s Law. One of the most important “Beyond Moore” challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) versus their increasing static power consumption. This is because, at room temperature, the thermal emission transportation mechanism will cause a physical limitation on subthreshold swing (SS), which is fundamentally limited to a minimum value of 60 mV/decade for MOSFETs, and accompanied by an increase in off-state leakage current with the process of scaling down. Moreover, the impacts of short-channel effects on device performance also become an increasingly severe problem with channel length scaling down. Due to the band-to-band tunneling mechanism, Tunnel Field-Effect Transistors (TFETs) can reach a far lower SS than MOSFETs. Recent research works indicated that TFETs are already becoming some of the promising candidates of conventional MOSFETs for ultra-low-power applications. This paper provides a review of some advances in materials and structures along the evolutionary process of TFETs. An in-depth discussion of both experimental works and simulation works is conducted. Furthermore, the performance of TFETs with different structures and materials is explored in detail as well, covering Si, Ge, III-V compounds and 2D materials, alongside different innovative device structures. Additionally, this work provides an outlook on the prospects of TFETs in future ultra-low-power electronics and biosensor applications. Full article

The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of fully relaxed GaAs nanoislands on complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers. Nanotip wafers were fabricated using a state-of-the-art 0.13 μm SiGe Bipolar CMOS pilot line on 200 mm wafers. Our investigation focuses on understanding the influence of the growth conditions on the morphology, crystalline structure, and defect formation of the GaAs islands. The morphological, structural, and optical properties of the GaAs islands were characterized using scanning electron microscopy, high-resolution X-ray diffraction, and photoluminescence spectroscopy. For samples with less deposition, the GaAs islands exhibit a monomodal size distribution, with an average effective diameter ranging between 100 and 280 nm. These islands display four distinct facet orientations corresponding to the {001} planes. As the deposition increases, larger islands with multiple crystallographic facets emerge, accompanied by a transition from a monomodal to a bimodal growth mode. Single twinning is observed in all samples. However, with increasing deposition, not only a bimodal size distribution occurs, but also the volume fraction of the twinned material increases significantly. These findings shed light on the growth dynamics of nanoheteroepitaxial GaAs and contribute to ongoing efforts toward CMOS-compatible Si-based nanophotonic technologies. Full article

Graphite carbon nitride (g-C₃N₄) is a low band gap non-metallic polymer semiconductor that has broad application prospects and is an ideal material for absorbing visible light, as g-C₃N₄ materials have strong oxidation properties and are easy to modify. The structure formation of g-C₃N₄-based materials makes a series of photocatalytic synthesis reactions possible and improves photocatalytic reaction activity. In this paper, the development history, structures, and performance of g-C₃N₄ are briefly introduced, and the modification strategies of g-C₃N₄ are summarized to improve its photocatalytic and photoelectric catalytic properties via doping, heterojunction construction, etc. The light absorption and utilization of the catalysts are also analyzed in terms of light source conditions, and the application of g-C₃N₄ and its modified materials in photocatalysis and photocatalytic degradation is reviewed. Full article

This study investigates the application of additive manufacturing (AM) in fabricating transverse thermoelectric (TTE) composites, demonstrating the feasibility of this methodology for TTE material synthesis. Zinc oxide (ZnO), a wide-bandgap semiconductor with moderate thermoelectric performance, and copper (Cu), a highly conductive metal, were selected as base materials. These were formulated into stable paste-like feedstocks for direct ink writing (DIW). A custom dual-nozzle 3D printer was developed to precisely deposit these materials in pre-designed architectures. The resulting structures exhibited measurable transverse Seebeck effects. Unlike prior TE research primarily focused on longitudinal configurations, this work demonstrates a novel AM-enabled strategy that integrates directional compositional anisotropy, embedded metal–semiconductor interfaces, and scalable multi-material printing to realize TTE behavior. The approach offers a cost-effective and programmable pathway toward next-generation energy harvesting and thermal management systems. Full article

Tantalum oxide is a wide bandgap material commonly used as an insulating dielectric layer for devices. In this work, hexagonal Ta₂O₅ (δ-Ta₂O₅) films doped with tungsten (W) were deposited on α-Al₂O₃ (0001) by metal–organic chemical vapor deposition (MOCVD). The effects of W doping on the structural, morphology, and photoelectrical properties of the obtained films were studied. The results showed that all W-doped films were n-type semiconductors. The XRD measurement result exhibited that the increase in the W doping concentration leads to the changes in the preferred growth crystal plane of the films from δ-Ta₂O₅ ($10\overline{1}1$) to (0001). The 1.5% W-doped film possessed the best crystal quality and conductivity. The Hall measurement showed that the minimum resistivity of the film was 2.68 × 10⁴ Ω∙cm, and the maximum carrier concentration was 7.39 × 10¹⁴ cm³. With the increase in the W concentration, the surface roughness of the film increases, while the optical bandgap decreases. The optical band gap of the 1.5% W-doped film was 3.92 eV. The W doping mechanisms were discussed. Full article

The transient overvoltage caused by coupling of loop inductance during rapid turn off of a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) can easily induce avalanche breakdown. Meanwhile, the instantaneous high-density heat flux generated by energy dissipation can create significant electrothermal coupling stress, potentially leading to device failure under severe conditions. To address the issue that the multi-chip parallel structure of power modules cannot linearly enhance avalanche withstand capability, an innovative device screening method based on parameter matching is proposed in this paper. The effectiveness of the proposed solution is verified through experiments, with the total current limit of dual-tube parallel devices and three-tube parallel devices achieving 1.9 times and 2.4 times that of single-tube devices, respectively. This research is of great significance for improving safe and reliable operation of the system. Full article

Image quality in high-resolution digital single-lens reflex (DSLR) systems is degraded by Complementary Metal-Oxide-Semiconductor (CMOS) sensor noise and optical imperfections. Sensor noise becomes pronounced under high-ISO (International Organization for Standardization) settings, while optical aberrations such as blur and chromatic fringing distort the signal. Optical and sensor-level noise are distinct and hard to separate, but prior studies suggest that improving optical fidelity can suppress or mask sensor noise. Upon this understanding, we introduce a framework that utilizes densely interpolated Point Spread Functions (PSFs) to recover high-fidelity images. The process begins by simulating Gaussian-based PSFs as pixel-wise chromatic and spatial distortions derived from real degraded images. These PSFs are then encoded into a latent space to enhance their features and used to generate refined PSFs via similarity-weighted interpolation at each target position. The interpolated PSFs are applied through Wiener filtering, followed by residual correction, to restore images with improved structural fidelity and perceptual quality. We compare our method—based on pixel-wise, physical correction, and densely interpolated PSF at pre-processing—with post-processing networks, including deformable convolutional neural networks (CNNs) that enhance image quality without modeling degradation. Evaluations on DIV2K and RealSR-V3 confirm that our strategy not only enhances structural restoration but also more effectively suppresses sensor-induced artifacts, demonstrating the benefit of explicit physical priors for perceptual fidelity. Full article

The U-shaped Metal-Oxide-Semiconductor Field-Effect Transistor (UMOS or trench FET) is one of the most widely used semiconductor power devices worldwide, increasingly replacing the traditional vertical double-diffused MOSFET (DMOSFET) in various applications due to its superior electrical performance. However, a detailed experimental comparison of ion-induced Single-Event Burnout (SEB) in similarly rated silicon (Si) UMOS and DMOS devices remains lacking. This study presents a comprehensive experimental comparison of ion-induced charge collection mechanisms and SEB susceptibility in similarly rated Si UMOS and DMOS devices. Charge collection mechanisms due to alpha particles from ²⁴¹Am radiation source are analyzed, and SEB cross sections induced by heavy ions from particle accelerators are directly compared. The implications of the unique gate structure of Si UMOSFETs on their reliability in harsh radiation environments are discussed based on technology computer-aided design (TCAD) simulations. Full article

The refractive index is an important optical property of materials which can be used to understand the composition of materials. Therefore, refractive index sensing plays a vital role in biological diagnosis and therapy, material analysis, (bio)chemical sensing, and environmental monitoring. Conventional optical refractive index sensors based on optical fibers and ridge waveguides have relatively large sizes of a few millimeters, making them unsuitable for on-chip integration. Photonic crystals (PCs) have been used to significantly improve the compactness of refractive index sensors for on-chip integration. However, PC structures suffer from defect-introduced strong scattering, resulting in low transmittance, particularly at sharp bends. Valley photonic crystals (VPCs) can realize defect-immune unidirectional transmission of topological edge states, effectively reducing the scattering loss and increasing the transmittance. However, optical refractive index sensors based on VPC structures have not been demonstrated. This paper proposes a refractive index sensor based on a VPC Mach–Zehnder interferometer (MZI) structure with a high forward transmittance of 0.91 and a sensitivity of 1534%/RIU at the sensing wavelength of λ = 1533.97 nm within the index range from 1.0 to 2.0, which is higher than most demonstrated optical refractive index sensors in the field. The sensor has an ultracompact footprint of 9.26 μm × 7.99 μm. The design can be fabricated by complementary metal–oxide semiconductor (CMOS) fabrication technologies. Therefore, it will find broad applications in biology, material science, and medical science. Full article

Integrated photonic biosensors are revolutionizing lab-on-a-chip technologies by providing highly sensitive, miniaturized, and label-free detection solutions for a wide range of biological and chemical targets. This review explores the foundational principles behind their operation, including the use of resonant photonic structures such as microring and whispering gallery mode resonators, as well as interferometric and photonic crystal-based designs. Special focus is given to the design strategies that optimize light–matter interaction, enhance sensitivity, and enable multiplexed detection. We detail state-of-the-art fabrication approaches compatible with complementary metal-oxide-semiconductor processes, including the use of silicon, silicon nitride, and hybrid material platforms, which facilitate scalable production and seamless integration with microfluidic systems. Recent advancements are highlighted, including the implementation of optofluidic photonic crystal cavities, cascaded microring arrays with subwavelength gratings, and on-chip detector arrays capable of parallel biosensing. These innovations have achieved exceptional performance, with detection limits reaching the parts-per-billion level and real-time operation across various applications such as clinical diagnostics, environmental surveillance, and food quality assessment. Although challenges persist in handling complex biological samples and achieving consistent large-scale fabrication, the emergence of novel materials, advanced nanofabrication methods, and artificial intelligence-driven data analysis is accelerating the development of next-generation photonic biosensing platforms. These technologies are poised to deliver powerful, accessible, and cost-effective diagnostic tools for practical deployment across diverse settings. Full article

This work systematically analyses the electrical and structural properties of a bilayer gate dielectric composed of Sm₂O₃ and ZrO₂ on a 4H-SiC substrate. The bilayer thin film was fabricated using a sputtering process, followed by a dry oxidation step with an adjusted oxygen-to-nitrogen (O₂:N₂) gas concentration ratio. XRD analysis validated formation of an amorphous structure with a monoclinic phase for both Sm₂O₃ and ZrO₂ dielectric thin films. High-resolution transmission emission (HRTEM) analysis verified the cross-section of fabricated stacking layers, confirmed physical oxide thickness around 12.08–13.35 nm, and validated the amorphous structure. Meanwhile, XPS confirmed the presence of more stoichiometric dielectric oxide formation for oxidized/nitrided O₂:N₂-incorporated samples, and more sub-stochiometric thin films for samples only oxidized in ambient O₂. The oxidation/nitridation processes with N₂ incorporation influenced the band offsets and revealed conduction band offsets (CBOs) ranging from 2.24 to 2.79 eV. The affected charge movement and influenced electrical performance where optimized samples with gas concentration ratio of 90% O₂:10% N₂ achieved the highest electrical breakdown field of 10.1 MV cm⁻¹ at a leakage current density of 10⁻⁶ A cm⁻². This gate stack also improved key parameters such as the effective dielectric constant ($k_{eff}$) up to 29.75, effective oxide charge ($Q_{eff}$), average interface trap density ($D_{it}$), and slow trap density (STD). The bilayer gate stack of Sm₂O₃ and ZrO₂ revealed potential attractive characteristics as a candidate for high-k gate dielectric applications in metal-oxide-semiconductor (MOS)-based devices. Full article

Indium, widely used as indium-tin oxide (ITO), has been recognized as a strategical metal for audiovisual, optoelectronic systems, semiconductors and photovoltaic fields. An increasing shortage and unflexible mineral supply have led indium to be recovered from secondary sources, such as waste electrical and electronic equipment (WEEE). The main step for indium hydrometallurgical recovery from WEEE is the electrowinning process using sulfate baths, giving lower environmental impact and improved workplace safety conditions. In this investigation, a titanium cathode has been employed for the study of the indium electrowinning process in a sulfate-based bath. This study was focused on analyzing current efficiency (CE), specific energy consumption (SEC) and deposit morphology and structure as the temperature, current density, pH and electrolyte composition were varied. Prior to conducting electrowinning tests, a conventional three-electrode cell was used to perform cyclic voltametric assessments of the electrodeposition reactions on the Ti electrode at room temperature. The indium electrowinning tests on Ti cathodes presented CE values higher than 90%, with low energy consumption at low current densities, showing a negligible influence of additive agents in the bath, different from results obtained with other cathodes in other works. Moreover, the increase of the current density beyond 75 A/m² produced significant effects by etching the electrode surface with 1M HF. In particular, at the conclusion of this investigation, good results are obtained without additives, by etching the titanium cathode and operating at higher current density between 100 and 200 A/m² at pH 2.3 and different temperatures (40 °C and 60 °C). Finally, indium deposits were analyzed by XRD and SEM in order to determine the influence of operative conditions on the structure and surface morphology. Full article

Chemical warfare agents (CWAs), including hydrogen cyanide (AC), 2-[fluoro(methyl)phosphoryl]oxypropane (GB), 3-[fluoro(methyl)phosphoryl]oxy-2,2-dimethylbutane (GD), ethyl S-(2-diisopropylaminoethyl) methylphosphonothioate (VX), and di-2-chloroethyl sulfide (HD), pose a great threat to public safety; therefore, it is important to develop sensing technology for CWAs. Herein, a sensor array consisting of 24 metal oxide semiconductor (MOS)-based MEMS sensors with good gas sensing performance, a simple device structure (0.9 mm × 0.9 mm), and low power consumption (<10 mW on average) was developed. The experimental results show that there are always several sensors among the 24 sensors that show good sensing performance in relation to each CWA, such as a relatively significant response, a broad detection range (AC: 5.8–89 ppm; GB: 0.04–0.47 ppm; GD: 0.06–4.7 ppm; VX: 9.978 × 10⁻⁴–1.101 × 10⁻³; HD: 0.61–4.9 ppm), and a low detection limit that is lower than the immediately dangerous for life and health (IDLH) level of the five CWAs. This indicates that these sensors can meet the needs for qualitative detection and can provide an early warning regarding low concentrations of CWAs. In addition, features were extracted from the initial kinetic characteristics and dynamic change characteristics of the sensing response. Finally, principal component analysis (PCA) and machine learning algorithms were applied for CWA classification. The obtained PCA plots showed significant differences between groups, and the narrow neural network among the machine learning algorithms achieves a prediction accuracy of nearly 100.0%. In summary, the proposed MOS-based MEMS sensor array driven by pattern recognition algorithms can be integrated into portable devices, showing great potential and practical applications in the rapid, in situ, and on-site detection and identification of CWAs. Full article

The persistent threat of heavy metal ions (e.g., Pb²⁺, Hg²⁺, Cd²⁺) in aqueous environments to human health underscores an urgent need for advanced sensing platforms capable of rapid and precise pollutant monitoring. Graphitic carbon nitride (g-C₃N₄), a metal-free polymeric semiconductor, has emerged as a revolutionary material for constructing next-generation environmental sensors due to its exceptional physicochemical properties, including tunable electronic structure, high chemical/thermal stability, large surface area, and unique optical characteristics. This review systematically explores the integration of g-C₃N₄ with functional nanomaterials (e.g., metal nanoparticles, metal oxide nanomaterials, carbonaceous materials, and conduction polymer) to engineer high-performance sensing interfaces for heavy metal detection. The structure-property relationship is critically analyzed, emphasizing how morphology engineering (nanofibers, nanosheets, and mesoporous) and surface functionalization strategies enhance sensitivity and selectivity. Advanced detection mechanisms are elucidated, including electrochemical signal amplification, and photoinduced electron transfer processes enabled by g-C₃N₄’s tailored bandgap and surface active sites. Furthermore, this review addresses challenges in real-world deployment, such as scalable nanomaterial synthesis, matrix interference mitigation, and long-term reliable detection. This work provides valuable insights for advancing g-C₃N₄-based electrochemical sensing technologies toward sustainable environmental monitoring and intelligent pollution control systems. Full article

To solve the problem of long turn-off times for transient electromagnetic (TEM) transmitters with inductive loads, a new second-order fast discharge circuit topology added into the original H-bridge structure for TEM transmitters is presented, which includes a capacitor, two Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), and two resistors. Firstly, the four operating stages and principles of the second-order circuit were analyzed. Then, the mathematical models of the turn-off time of the current and the voltage stress of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) were established using the analytical method. Finally, the parameters of the resistor and capacitor were selected by finding the optimal solution for the fixed transmitter coil. Compared with the simulation results of the other two topologies, the proposed topology demonstrates a current-independent turn-off time and achieves the shortest duration at 50 A, while maintaining lower voltage stress at 9 A. The experimental results of the prototype show that the turn-off time is always about 64 μs when the currents are 1 A, 5 A, and 9 A. Simulation and experimental results show that the second-order circuit reduces the MOSFET’s turn-off time to 58 μs via Resistor–Inductor–Capacitor (RLC) series resonance, with the turn-off duration remaining load-current-independent. Full article