Search Results (21)

Zinc oxide (ZnO) thin films were deposited by radio-frequency reactive magnetron sputtering at a cryogenic substrate temperature of −78 °C to explore a novel low-thermal-budget route for semiconductor growth. Despite the extremely low temperature, X-ray diffraction revealed spontaneous partial crystallization of wurtzite ZnO upon warming to room temperature, driven by strain relaxation and stress coupling at the ZnO/SiO₂ interface. Atomic-force and scanning-electron microscopies confirmed nanoscale hillock and ridge morphologies that correlate with in-plane compressive stress and out-of-plane tensile strain. Spectroscopic ellipsometry, modeled using a general oscillator (GO) mathematical model approach, determined a film thickness of 60.81 nm, surface roughness of 3.75 nm, and a direct optical bandgap of 3.40 eV. Photoluminescence spectra exhibited strong near-band-edge emission modulated with LO-phonon replicas at 300 K, indicating robust exciton–phonon coupling. This study demonstrates that ZnO films grown at cryogenic conditions can undergo substrate-induced self-crystallize upon warming, which eliminates the need for thermal annealing. The introduced cryogenic self-crystallization regime offers a new pathway for depositing crystalline semiconductors on thermally sensitive or flexible substrates where heating is undesirable, enabling future optoelectronic and photonic device fabrication under ultra-low thermal-budget conditions. Full article

Wearable and skin-mounted electronics demand encapsulation designs that simultaneously provide strong barrier performance, mechanical reliability, and transferability under ultrathin conditions. In this study, a residual stress-balanced transferable encapsulation platform was developed by integrating a urethane-based copolymer superstrate [p(IEM-co-HEMA)] with inorganic thin films. The polymer, deposited via initiated chemical vapor deposition (iCVD), offered over 90% optical transmittance, low RMS roughness (1–3 nm), and excellent solvent resistance, providing a stable base for inorganic barrier integration. An ALD Al₂O₃/ZnO nano-stratified barrier initially delivered effective moisture blocking, but tensile stress accumulation imposed a critical thickness of 30 nm, where the WVTR plateaued at ~2.5 × 10⁻⁴ g/m²/day. To overcome this limitation, a 40 nm e-beam SiO₂ capping layer was added, introducing compressive stress via atomic peening and stabilizing Al₂O₃ interfaces through Si–O–Al bonding. This stress-balanced design doubled the critical thickness to 60 nm and reduced the WVTR to 3.75 × 10⁻⁵ g/m²/day, representing an order-of-magnitude improvement. OLEDs fabricated on this ultrathin platform preserved J–V–L characteristics and efficiency (~4.5–5.0 cd/A) after water-assisted transfer and on-skin deformation, while maintaining LT80 lifetimes of 140–190 h at 400 cd/m² and stable emission for over 20 days in ambient storage. These results demonstrate that the stress-balanced encapsulation platform provides a practical route to meet the durability and reliability requirements of next-generation wearable optoelectronic devices. Full article

As the typical representative of amorphous oxide semiconductors (AOS), quaternary indium gallium zinc oxide (IGZO) has been applied as the active layer of thin-film transistors (TFTs), but their mobility is still low (usually ~10 cm²/Vs). IGTO is reported to have larger mobility owing to the addition of Tin (Sn) in IZO. So, whether Sn doping can increase the optoelectronic properties of IGZO is a new topic worth studying. In this study, four series of quinary InGaZnSnO (IGZTO) oxide thin films were deposited on glass substrates using a high-purity IGZTO (In:Ga:Zn:Sn:O = 1:0.5:1.5:0.25:x, atomic ratio) ceramic target by RF magnetron sputtering. The effects of fabrication parameters (sputtering power, argon gas flow, and target-to-substrate distance) and film thickness on the microstructure, optical, and electrical properties of IGZTO thin films were investigated. The results show that all IGZTO thin films deposited at room temperature (RT) are amorphous and have a smooth and uniform surface with a low roughness (RMS of 0.441 nm, RA of 0.332 nm). They exhibit good average visible light transmittance (89.02~90.69%) and an optical bandgap of 3.47~3.56 eV. When the sputtering power is 90 W, the argon gas flow rate is 50 sccm, and the target-to-substrate distance is 60 mm, the IGZTO films demonstrate optimal electrical properties: carrier concentration (3.66 × 10¹⁹ cm⁻³), Hall mobility (29.91 cm²/Vs), and resistivity (0.54 × 10⁻² Ω·cm). These results provide a valuable reference for the property modulation of IGZTO films and the potential application in optoelectronic devices such as TFTs. Full article

In this study, a thin film of silicon carbide (SiC) was deposited on a porous silicon (P-Si) substrate using pulsed laser deposition (PLD). The photo–electrochemical etching method with an Nd: YAG laser at 1064 nm wavelength and 900 mJ pulse energy and at a vacuum of 10⁻² mbar P-Si was utilized to create a sufficiently high amount of surface area for SiC film deposition to achieve efficient SiC film growth on the P-Si substrate. X-ray diffraction (XRD) analysis was performed on the crystalline structure of SiC and showed high-intensity peaks at the (111) and (220) planes, indicating that the substrate–film interaction is substantial. Surface roughness particle topography was examined via atomic force microscopy (AFM), and a mean diameter equal to 72.83 nm was found. Field emission scanning electron microscopy (FESEM) was used to analyze surface morphology, and the pictures show spherical nanoparticles and a mud-sponge-like shape demonstrating significant nanoscale features. Photoluminescence and UV-Vis spectroscopy were utilized to investigate the optical properties, and two emission peaks were observed for the SiC and P-Si substrates, at 590 nm and 780 nm. The SiC/P-Si heterojunction photodetector exhibited rectification behavior in its dark I–V characteristics, indicating high junction quality. The spectral responsivity of the SiC/P-Si observed a peak responsivity of 0.0096 A/W at 365 nm with detectivity of 24.5 A/W Jones, and external quantum efficiency reached 340%. The response time indicates a rise time of 0.48 s and a fall time of 0.26 s. Repeatability was assured by the tight clustering of the data points, indicating the good reproducibility and stability of the SiC/P-Si deposition process. Linearity at low light levels verifies efficient photocarrier generation and separation, whereas a reverse saturation current at high intensities points to the maximum carrier generation capability of the device. Moreover, Raman spectroscopy and energy dispersive spectroscopy (EDS) analysis confirmed the structural quality and elemental composition of the SiC/P-Si film, further attesting to the uniformity and quality of the material produced. This hybrid material’s improved optoelectronic properties, achieved by combining the stability of SiC with the quantum confinement effects of P-Si, make it useful in advanced optoelectronic applications such as UV-Vis photodetectors. Full article

Micro-size light-emitting diodes (μLEDs) are high-brightness, low-power optoelectronic devices with significant potential in display technology, lighting, and biomedical applications. AlGaInP-based red LEDs experience severe size-dependent effects when scaled to the micron level, and addressing the fabrication challenges of GaN-based red μLED arrays is crucial for achieving homogeneous integration. This study investigates the employment of KOH wet treatments to alleviate efficiency degradation caused by sidewall leakage currents. GaN-based red μLED arrays with pixel sizes ranging from 5 × 5 µm² to 20 × 20 µm² were grown using metal-organic chemical vapor deposition (MOCVD), and then fabricated via rapid thermal annealing, mesa etching, sidewall wet treatment, electrode deposition, sidewall passivation, chemical-mechanical polishing, and via processes. The arrays, with pixel densities ranging from 668 PPI (Pixel Per Inch) to 1336 PPI, consist of 10,000 to 40,000 emitting pixels, and their optoelectronic properties were systematically evaluated. The arrays with varying pixel sizes fabricated in this study were subjected to three distinct processing conditions: without KOH treatment, 3 min of KOH treatment, and 5 min of KOH treatment. Electrical characterization reveals that the 5-min KOH treatment significantly reduces leakage current, enhancing the electrical performance, as compared to the samples without KOH treatment or 3-min treatment. In terms of optical properties, while the arrays without any KOH treatment failed to emit light, the ones with 3- and 5-min KOH treatment exhibit excellent optical uniformity and negligible blue shift. Most arrays treated for 5 min demonstrate superior light output power (LOP) and optoelectronic efficiency, with the 5 µm pixel arrays exhibiting unexpectedly high performance. The results suggest that extending the KOH wet treatment time effectively mitigates sidewall defects, reduces non-radiative recombination, and enhances surface roughness, thereby minimizing optical losses. These findings provide valuable insights for optimizing the fabrication of high-performance GaN-based red μLEDs and contribute to the development of stable, high-quality small-pixel μLEDs for advanced display and lighting applications. Full article

Two-terminal optoelectronic synaptic devices based on ZnO nanoparticles (NPs) were fabricated to investigate the effects of thermal annealing control (200 °C–500 °C) in nitrogen and oxygen atmospheres on surface morphology, optical response, and synaptic functionality. Atomic force microscopy (AFM) analysis revealed improved grain growth and reduced surface roughness. At the same time, UV–visible spectroscopy and photoluminescence confirmed a blue shift in the absorption edge and enhanced near-band-edge emission, particularly in nitrogen-annealed devices due to increased oxygen vacancies. X-ray photoelectron spectroscopy (XPS) analysis of the O 1s spectra confirmed that oxygen vacancies were more pronounced in nitrogen-annealed devices than in oxygen-annealed ones at 500 °C. Optical resistive switching was observed, where 365 nm ultraviolet (UV) irradiation induced a transition from a high-resistance state (HRS) to a low-resistance state (LRS), attributed to electron–hole pair generation and oxygen desorption. The electrical reset process, achieved by applying −1.0 V to −5.0 V, restored the initial HRS, demonstrating stable switching behavior. Nitrogen-annealed devices with higher oxygen vacancies exhibited superior synaptic performance, including higher excitatory postsynaptic currents, stronger paired-pulse facilitation, and extended persistent photoconductivity (PPC) duration, enabling long-term memory retention. By systematically varying UV exposure time, intensity, pulse number, and frequency, ZnO NPs-based devices demonstrated the transition from short-term to long-term memory, mimicking biological synaptic behavior. Learning and forgetting simulations showed faster learning and slower decay in nitrogen-annealed devices, emphasizing their potential for next-generation neuromorphic computing and energy-efficient artificial synapses. Full article

Conjugated donor–acceptor (D-A) copolymers are widely used in optoelectronic devices due to their influence on the resulting properties. This study focuses on the synthesis and characterization of the conjugated D-A copolymer constructed with fluorene and di-2-thienyl-2,1,3-benzothiadiazole units, resulting in Poly[2,7-(9,9-dioctyl-fluorene)-alt-5,5-(4,7-di(2-thienyl)-2,1,3-benzothiadiazole)] (PFDTBT). The synthesis associated with reaction times of 48 and 24 h, the latter incorporating the phase-transfer catalyst Aliquat 336, was investigated. The modified conditions produced copolymers with higher molar masses (Mw > 20,000 g/mol), improved thermal stability and red emission at 649 nm. Furthermore, the resulting D-A copolymers exhibited uniform morphology with low surface roughness (P2—Ra: 0.77 nm). These improved properties highlight the potential of D-A copolymers based on PFDTBT for various optoelectronic applications, including photovoltaics, light-emitting devices, transistors and biological markers in the form of quantum dots. Full article

This study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum targets are used, varying the power applied to the aluminum target. The results show that increasing the target power favors the formation of aluminum nitride (AlN), which modifies the chemical composition of the material. The layers obtained present smooth surfaces with a roughness of less than 3 nm, which is beneficial for applications requiring interfaces with low defect density. Regarding the optical properties, it is observed that the optical bandgap varies between 1.8 eV and 2.0 eV, increasing with the target power. Hall effect measurements indicate a decrease in the free carrier concentration and an increase in the resistivity with increasing power. This approach allows for the synthesis of InAlN with properties suitable for optoelectronic applications, solar cells, photocatalysis, and photoelectrocatalysis at low cost. Full article

Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoelectronic, gas-sensing, and photovoltaic applications. Historically, the effects of phonons on materials were considered to be a hindrance. However, modern research has confirmed that the coupling of phonons in solids initiates excitations, causing several impacts on their thermal, dielectric, and electronic properties. These studies have motivated many scientists to design low-dimensional heterostructures and investigate their lattice dynamical properties. Proper simulation/characterization of phonons in XC materials and ultrathin epilayers has been challenging. Achieving the high crystalline quality of heteroepitaxial multilayer films on different substrates with flat surfaces, intra-wafer, and wafer-to-wafer uniformity is not only inspiring but crucial for their use as functional components to boost the performance of different nano-optoelectronic devices. Despite many efforts in growing strained zinc-blende (zb) GeC/Si (001) epifilms, no IR measurements exist to monitor the effects of surface roughness on spectral interference fringes. Here, we emphasize the importance of infrared reflectivity $\mathrm{R}\left(\mathsf{\omega }\right)$ and transmission $\mathrm{T}\left(\mathsf{\omega }\right)$ spectroscopy at near normal θ_i = 0 and oblique θ_i ≠ 0 incidence (Berreman effect) for comprehending the phonon characteristics of both undoped and doped GeC/Si (001) epilayers. Methodical simulations of $\mathrm{R}\left(\mathsf{\omega }\right)$ and $\mathrm{T}\left(\mathsf{\omega }\right)$ revealing atypical fringe contrasts in ultrathin GeC/Si are linked to the conducting transition layer and/or surface roughness. This research provided strong perspectives that the Berreman effect can complement Raman scattering spectroscopy for allowing the identification of longitudinal optical ${\mathsf{\omega }}_{\mathrm{LO}}$ phonons, transverse optical ${\mathsf{\omega }}_{\mathrm{TO}}$ phonons, and LO-phonon–plasmon coupled ${\mathsf{\omega }}_{\mathrm{LPP}}^{+}$ modes, respectively. Full article

This investigation explores the structural and electronic properties of low-temperature-grown (InAs)₄(GaAs)₃/Be-doped InAlAs and InGaAs/Be-doped InAlAs multiple quantum wells (MQWs), utilizing migration-enhanced epitaxy (MEE) and conventional molecular beam epitaxy (MBE) growth mode. Through comprehensive characterization methods including transmission electron microscopy (TEM), Raman spectroscopy, atomic force microscopy (AFM), pump–probe transient reflectivity, and Hall effect measurements, the study reveals significant distinctions between the two types of MQWs. The (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs grown via the MEE mode exhibit enhanced periodicity and interface quality over the InGaAs/Be-InAlAs MQWs grown through the conventional molecule beam epitaxy (MBE) mode, as evidenced by TEM. The AFM results indicate lower surface roughness for the (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs by using the MEE mode. Raman spectroscopy reveals weaker disorder-activated modes in the (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs by using the MEE mode. This originates from utilizing the (InAs)₄(GaAs)₃ short period superlattices rather than InGaAs, which suppresses the arbitrary distribution of Ga and In atoms during the InGaAs growth. Furthermore, pump–probe transient reflectivity measurements show shorter carrier lifetimes in the (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs, attributed to a higher density of antisite defects. It is noteworthy that room temperature Hall measurements imply that the mobility of (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs grown at a low temperature of 250 °C via the MEE mode is superior to that of InGaAs/Be-doped InAlAs MQWs grown in the conventional MBE growth mode, reaching 2230 cm²/V.s. The reason for the higher mobility of (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs is that this short-period superlattice structure can effectively suppress alloy scattering caused by the arbitrary distribution of In and Ga atoms during the growth process of the InGaAs ternary alloy. These results exhibit the promise of the MEE growth approach for growing high-performance MQWs for advanced optoelectronic applications, notably for high-speed optoelectronic devices like THz photoconductive antennas. Full article

In this study, we delved into the influence of Ir nanofilm coating thickness on the optical and optoelectronic behavior of ultrathin MoO₃ wafer-scale devices. Notably, the 4 nm Ir coating showed a negative Hall voltage and high carrier concentration of 1.524 × 10¹⁹ cm⁻³ with 0.19 nm roughness. Using the Kubelka–Munk model, we found that the bandgap decreased with increasing Ir thickness, consistent with Urbach tail energy suggesting a lower level of disorder. Regarding transient photocurrent behavior, all samples exhibited high stability under both dark and UV conditions. We also observed a positive photoconductivity at bias voltages of >0.5 V, while at 0 V bias voltage, the samples displayed a negative photoconductivity behavior. This unique aspect allowed us to explore self-powered negative photodetectors, showcasing fast response and recovery times of 0.36/0.42 s at 0 V. The intriguing negative photoresponse that we observed is linked to hole self-trapping/charge exciton and Joule heating effects. Full article

In this study, we assessed the electrical and optical behavior of semiconductor hybrid films fabricated from octaethyl-21H,23H-porphine copper (CuP), embedded in polymethylmethacrylate (PMMA), and polystyrene (PS). The hybrid films were characterized structurally and morphologically using infrared spectroscopy (IR), atomic force microscopy (AFM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Subsequently, the PMMA:CuP and PS:CuP hybrid films were evaluated optically by UV–vis spectroscopy, as well as electrically, with the four-point collinear method. Hybrid films present a homogeneous and low roughness morphology. In addition, the PS matrix allows the crystallization of the porphin, while PMMA promotes the amorphous structure in CuP. The polymeric matrix also affects the optical behavior of the films, since the smallest optical gap (2.16 eV) and onset gap (1.89 eV), and the highest transparency are obtained in the film with a PMMA matrix. Finally, the electrical behavior in hybrid films is also affected by the matrix: the largest amount of current carried is approximately 0.01 A for the PS:CuP film, and 0.0015 A for the PMMA:CuP film. Thanks to the above properties, hybrid films are promising candidates for use in optoelectronic devices. Full article

Transparent conductors (TC) have been widely applied in a wide range of optoelectronic devices. Nevertheless, different transparent spectral bands are always needed for particular applications. In this work, indium tin oxide (ITO)-free TCs with tunable transparent bands based on the film structure of TiO₂/Ag/AZO (Al-doped ZnO) were designed by the transfer matrix method and deposited by magnetron sputtering. The transparent spectra and figure-of-merit (FOM) were effectively adjusted by precisely controlling the Ag layer’s thickness. The fabricated as-deposited samples exhibited an average optical transmittance larger than 88.3% (400–700 nm), a sheet resistance lower than 7.7 Ω.sq⁻¹, a low surface roughness of about 1.4 nm, and mechanical stability upon 1000 bending cycles. Moreover, the samples were able to hold optical and electrical properties after annealing at 300 °C for 60 min, but failed at 400 °C even for 30 min. Full article

Chalcogenides semiconductors are currently being studied as active layers in the development of electronic devices in the field of applied technology. In the present paper, cadmium sulfide (CdS) thin films containing nanoparticles of the same material as the active layer were produced and analyzed for their application in fabricating optoelectronic devices. CdS thin films and CdS nanoparticles were obtained via soft chemistry at low temperatures. The CdS thin film was deposited via chemical bath deposition (CBD); the CdS nanoparticles were synthesized via the precipitation method. The construction of a homojunction was completed by incorporating CdS nanoparticles on CdS thin films deposited via CBD. CdS nanoparticles were deposited using the spin coating technique, and the effect of thermal annealing on the deposited films was investigated. In the modified thin films with nanoparticles, a transmittance of about 70% and a band gap between 2.12 eV and 2.35 eV were obtained. The two characteristic phonons of the CdS were observed via Raman spectroscopy, and the CdS thin films/CdS nanoparticles showed a hexagonal and cubic crystalline structure with average crystallite size of 21.3–28.4 nm, where hexagonal is the most stable for optoelectronic applications, with roughness less than 5 nm, indicating that CdS is relatively smooth, uniform and highly compact. In addition, the characteristic curves of current-voltage for as-deposited and annealed thin films showed that the metal-CdS with the CdS nanoparticle interface exhibits ohmic behavior. Full article

All-inorganic perovskite solar cells are attractive photovoltaic devices because of their excellent optoelectronic performance and thermal stability. Unfortunately, the currently used efficient inorganic perovskite materials can spontaneously transform into undesirable phases without light-absorption properties. Studies have been carried out to stabilize all-inorganic perovskite by mixing low-dimensional perovskite. Compared with organic two-dimensional (2D) perovskite, inorganic 2D Cs₂PbI₂Cl₂ shows superior thermal stability. Our group has successfully fabricated 2D/3D mixed-dimensional Cs₂PbI₂Cl₂/CsPbI_2.5Br_0.5 films with increasing phase stability. The high boiling point of dimethyl sulfoxide (DMSO) makes it a preferred solvent in the preparation of Cs₂PbI₂Cl₂/CsPbI_2.5Br_0.5 inorganic perovskite. When the perovskite films are prepared by the one-step solution method, it is difficult to evaporate the residual solvent molecules from the prefabricated films, resulting in films with rough surface morphology and high defect density. This study used the rapid precipitation method to control the formation of perovskite by treating it with methanol/isopropanol (MT/IPA) mixed solvent to produce densely packed, smooth, and high-crystallized perovskite films. The bulk defects and the carrier transport barrier of the interface were effectively reduced, which decreased the recombination of the carriers in the device. As a result, this effectively improved photoelectric performance. Through treatment with MT/IPA, the photoelectric conversion efficiency (PCE) of solar cells prepared in the N₂ atmosphere increased from 13.44% to 14.10%, and the PCE of the device prepared in the air increased from 3.52% to 8.91%. Full article