Search Results (322)

In this work, we demonstrate high-efficiency 385 nm AlGaN-based near-ultraviolet micro light emitting diode (NUV-Micro LED) arrays. The epi structure is prepared using a novel AlN-inserted superlattice electrical blocking layer which enhances hole spreading in the p-type region significantly. The NUV-Micro LED arrays in this work comprise 228 chips in parallel with wavelengths at 385 nm, and each single chip size is 15 × 30 μm². Compared with conventional bulk AlGaN-based EBL structures, the NUV-Micro LED arrays that implemented the new hole spreading enhanced superlattice electrical blocking layer (HSESL-EBL) structure proposed in this work had a remarkable increase in light output power (LOP) at current density, increasing the range down from 0.02 A/cm² to as high as 97 A/cm². The array’s light output power is increased up to 1540% at the lowest current density 0.02 A/cm², and up to 58% at the highest current density 97 A/cm², measured under room temperature (RT); consequently, the WPE is increased from 13.4% to a maximum of 30.18%. This AlN-inserted HESEL-EBL design significantly enhances both the lateral expansion efficiency and the hole injection efficiency into the multi quantum well (MQW) in the arrays, improving the concentration distribution of the holes in MQW while maintaining good suppression of electron leakage. The array’s efficiency droop has also been greatly reduced. Full article

This work presents a comprehensive study of the structural, luminescent, and photoconversion properties of epitaxial composite phosphor converters based on single crystalline films of Ce³⁺-activated Ca_2−xY_1+xMg_1+xSc_1−xSi₃O₁₂:Ce (x = 0–0.25) (CYMSSG:Ce) garnet, grown using the liquid phase epitaxy (LPE) method on single-crystal Y₃Al₅O₁₂ (YAG) and YAG:Ce substrates. The main goal of this study is to elucidate the structure–composition–property relationships that influence the photoluminescence and photoconversion efficiency of these film–substrate composite converters, aiming to optimize their performance in high-power white light-emitting diode (WLED) applications. Systematic variation in the Y³⁺/Sc³⁺/Mg²⁺ cationic ratios within the garnet structure, combined with the controlled tuning of film thickness (ranging from 19 to 67 µm for CYMSSG:Ce/YAG and 10–22 µm for CYMSSG:Ce/YAG:Ce structures), enabled the precise modulation of their photoconversion properties. Prototypes of phosphor-converted WLEDs (pc-WLEDs) were developed based on these epitaxial structures to assess their performance and investigate how the content and thickness of SCFs affect the colorimetric properties of SCFs and composite converters. Clear trends were observed in the Ce³⁺ emission peak position, intensity, and color rendering, induced by the Y³⁺/Sc³⁺/Mg²⁺ cation substitution in the film converter, film thickness, and activator concentrations in the substrate and film. These results may be useful for the design of epitaxial phosphor converters with tunable emission spectra based on the epitaxially grown structures of garnet compounds. Full article

Visible light communication (VLC) is an emerging communication technology that integrates lighting and communication, offering significant advantages in terms of data transmission rates and broad application prospects. With advancements in semiconductor technology, micro-light-emitting diodes (micro-LEDs) have emerged as one of the most promising light sources for high-speed VLC systems, owing to their high brightness, low power consumption, and high modulation bandwidth. Recent developments have also seen substantial progress in high-bandwidth GaN-based visible light detectors, which complement the transmission capabilities of micro-LEDs. This paper reviews the latest advancements in micro-LEDs as high-speed transmitters for VLC, detailing their capabilities in terms of bandwidth, data rates, modulation techniques, and diverse applications, including structured lighting systems that combine positioning, communication, and illumination. Additionally, the advantages of using micro-LEDs in GaN-based photodetectors (PDs) are discussed, highlighting their potential in enhancing bandwidth and data rates and facilitating high-speed communications across multifunctional applications. Therefore, this review will benefit the further development of micro-LEDs and their application in 6G communication and global interconnect. Full article

On-chip optical accelerometers can be a promising alternative to capacitive, piezo-resistive, and piezo-electric accelerometers in some applications due to their immunity to electromagnetic interference and high sensitivity, which allow for robust operation in electromagnetically noisy environments. This paper focuses on the characterization of an easy-to-fabricate tri-axial fiber-free optical MEMS accelerometer, which employs a simple assembly consisting of a light emitting diode (LED), a quadrant photodetector (QPD), and a suspended proof mass, measuring acceleration through light power modulation. This configuration enables simple readout circuitry without the need for complex digital signal processing (DSP). Performance modeling was conducted to simulate the LED’s irradiance profile and its interaction with the proof mass and QPD. Additionally, experimental tests were performed to measure the device’s mechanical sensitivity and validate the mechanical model. Lateral mechanical sensitivity is obtained with acceptable discrepancy from that obtained from FEA simulations. This work consolidates the performance of the design adapted and demonstrates the accelerometer’s feasibility for practical applications. Full article

The dissipation of excessive heat in high-power light-emitting diodes (LEDs) is essential for maintaining luminous efficiency, color stability, and device lifetime. While the incorporation of thermal vias in substrates is commonly used to improve heat dissipation, increasing their number is difficult in the limited area due to fabrication constraints. In this study, we use finite element analysis to investigate the effects of thermal via configurations on LED performance, including variations in the number of vias, spacing between vias, and their misalignment relative to the LED, arising from manufacturing tolerances. We found that the reduction in LED temperature saturated beyond a certain number of vias. Moreover, heat reduction can be further enhanced by optimizing the spacing between vias under a fixed number of vias. Based on these findings, the design of via configurations can achieve both fabrication feasibility and effective heat dissipation in high-power LEDs. Full article

As climate change destabilizes food crop production, there is a growing interest in controlled environment agriculture (CEA). Although light-emitting diodes (LED) have made CEA economically viable for some high-value crops when coupled to agrivoltaics (solar photovoltaics + agriculture), it has generally not been used for root vegetables. This is the first study to demonstrate that radishes and turnips could be grown in a reasonable period of eight weeks in an agrivoltaic agrotunnel using both lighting and grow walls optimized for lettuce growth. As reduction in LED energy use is important to minimize capital costs for solar energy, this study investigated three lighting treatments (red, white, and full-spectrum as control). The normalized yields (adjusted for total energy provided by each treatment) showed that both cultivars preferred red light, and harvested green leaves provided higher masses than the roots, although turnips appeared to be far more adaptable to vertical growth than radishes (>450% for roots and >50% for leaves per pot compared to radishes for the control treatment). The results show promise for providing true net-zero carbon emission root vegetables year-round with similar agrivoltaics-powered CEAs. Future work is needed with light intensity trials to optimize light recipes. Full article

Single sapphire crystals has been widely used in technology such as light emitting diodes, lasers, high-temperature and high-voltage devices, special windows, and optical systems, and grinding is an important process of their machining. In order to reveal the influence of the grinding wheel speed, grinding depth, and feed rate on the ground surface quality of sapphire crystals, a three-factor and five-level orthogonal experiment was designed and completed. Variance and range analysis was conducted on the experimental results using the surface roughness Ra and subsurface crack damage depth (SSD) as evaluation indicators, and optimized parameter combinations were explored. Furthermore, mathematical prediction models for the power regression of the Ra and SSD were established based on the experimental data. The research results indicate that within the range of the process parameters used in this experiment, the grinding process did not achieve the full ductile removal of the material. Some of the material was removed in a brittle mode, forming fractured pits on the ground surface, and median crack propagation occurred in the subsurface, forming a subsurface microcrack damage layer. The influence of the grinding parameters on the Ra and SSD showed a consistent trend, which was that the parameter with the greatest impact was the grinding wheel speed, followed by the feed rate and grinding depth. The Ra and SSD obtained under the optimized grinding parameter combination were 0.326 μm and 2.86 μm, respectively. The research results provide an experimental basis and guidance for improving the surface quality of sapphire crystals during grinding. Full article

Electrospinning techniques have been widely applied in diverse applications, such as biocompatible membranes, energy storage systems, and triboelectric nanogenerators (TENGs), with the capability to incorporate other functional materials to achieve specific purposes. Recently, gas sensors incorporating doped semiconducting materials fabricated by electrospinning have been extensively investigated. TENGs, functioning as self-powered energy sources, have been utilized to drive gas sensors without external power supplies. Herein, a self-powered triboelectric ethanol sensor (TEES) is fabricated by integrating a TENG and an ethanol gas sensor into a single device. The proposed TEES exhibits a significantly improved response time and lower detection limit compared to published integrated triboelectric sensors. The device achieves an open-circuit voltage of 51.24 V at 800 rpm and a maximum short-circuit current of 7.94 μA at 800 rpm. Owing to the non-contact freestanding operating mode, the TEES shows no significant degradation after 240,000 operational cycles. Compared with previous studies that integrated TENGs and ethanol sensors, the proposed TEES demonstrated a marked improvement in sensing performance, with a faster response time (6 s at 1000 ppm) and a lower limit of detection (10 ppm). Furthermore, ethanol detection is enabled by modulating the gate terminal of an IRF840 metal-oxide semiconductor field-effect transistor (MOSFET), which controls the illumination of a light-emitting diode (LED). The LED is extinguished when the electrical output decreases below the setting value, allowing for the discrimination of intoxicated states. These results suggest that the TEES provides a promising platform for self-powered, high-performance ethanol sensing. Full article

High heat flux brings about severe thermal problems for light-emitting diode (LED) automotive headlamps in narrow heat removal spaces, which will degrade their performance and lifespan. This study proposes an easily fabricated and feasible 1.3 mm thick 2D T-shaped in-plane ultra-thin vapor chamber (UTVC) for cooling the high heat flux of LED automotive headlamps. The effects of heating modes, unequal input heat load, and orientations on the thermal performance of the T-shaped UTVC are investigated. The results show that double-sided heating can improve the temperature uniformity of the T-shaped UTVC and reduce the thermal resistance compared to the single-sided heating. The lowest thermal resistances under single-sided and double-sided heating are 1.127 K/W at 12 W and 0.898 K/W at 16 W, respectively. When the total power is identical, the proposed 2D T-shaped UTVC can work effectively at unequal input power. The orientations have a significant impact on the thermal performance of the 2D T-shaped UTVC, and the thermal performance under different orientations changes with anti-gravity state < horizontal state < gravity-assisted state. The proposed T-shaped UTVC can work effectively under diverse operating ranges. Full article

The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density. Amorphous indium gallium zinc oxide (a-IGZO) TFTs are promising candidates to meet these requirements. However, conventional silicon dioxide gate insulators provide limited channel modulation due to their low dielectric constant, while alternative high-k dielectrics often suffer from high leakage currents and poor surface quality. Plasma-enhanced atomic layer deposition (PEALD) enables the atomic-level control of film thickness, resulting in high-quality films with superior conformality and uniformity. In this work, a systematic investigation was conducted on the properties of HfO₂ films and the electrical characteristics of a-IGZO TFTs with different HfO₂ thicknesses. A Vth of −0.9 V, μ_sat of 6.76 cm²/Vs, SS of 0.084 V/decade, and I_on/I_off of 1.35 × 10⁹ are obtained for IGZO TFTs with 40 nm HfO₂. It is believed that the IGZO TFTs based on a HfO₂ gate insulating layer and prepared by PEALD can improve electrical performance. Full article

Micro Light Emitting Diode (Micro-LED) technology, characterized by exceptional brightness, low power consumption, fast response, and long lifespan, holds significant potential for next-generation displays, yet its commercialization hinges on resolving challenges in high-density interconnect fabrication, particularly micrometer-scale bump formation. Traditional fabrication approaches such as evaporation enable precise bump control but face scalability and cost limitations, while electroplating offers lower costs and higher throughput but suffers from substrate conductivity requirements and uneven current density distributions that compromise bump-height uniformity. Emerging alternatives include electroless plating, which achieves uniform metal deposition on non-conductive substrates through autocatalytic reactions albeit with slower deposition rates; ball mounting and dip soldering, which streamline processes via automated solder jetting or alloy immersion but struggle with bump miniaturization and low yield; and photosensitive conductive polymers that simplify fabrication via photolithography-patterned composites but lack validated long-term stability. Persistent challenges in achieving micrometer-scale uniformity, thermomechanical stability, and environmental compatibility underscore the need for integrated hybrid processes, eco-friendly manufacturing protocols, and novel material innovations to enable ultra-high-resolution and flexible Micro-LED implementations. This review systematically compares conventional and emerging methodologies, identifies critical technological bottlenecks, and proposes strategic guidelines for industrial-scale production of high-density Micro-LED displays. Full article

Micro-size light-emitting diodes (μLEDs) are high-brightness, low-power optoelectronic devices with significant potential in display technology, lighting, and biomedical applications. AlGaInP-based red LEDs experience severe size-dependent effects when scaled to the micron level, and addressing the fabrication challenges of GaN-based red μLED arrays is crucial for achieving homogeneous integration. This study investigates the employment of KOH wet treatments to alleviate efficiency degradation caused by sidewall leakage currents. GaN-based red μLED arrays with pixel sizes ranging from 5 × 5 µm² to 20 × 20 µm² were grown using metal-organic chemical vapor deposition (MOCVD), and then fabricated via rapid thermal annealing, mesa etching, sidewall wet treatment, electrode deposition, sidewall passivation, chemical-mechanical polishing, and via processes. The arrays, with pixel densities ranging from 668 PPI (Pixel Per Inch) to 1336 PPI, consist of 10,000 to 40,000 emitting pixels, and their optoelectronic properties were systematically evaluated. The arrays with varying pixel sizes fabricated in this study were subjected to three distinct processing conditions: without KOH treatment, 3 min of KOH treatment, and 5 min of KOH treatment. Electrical characterization reveals that the 5-min KOH treatment significantly reduces leakage current, enhancing the electrical performance, as compared to the samples without KOH treatment or 3-min treatment. In terms of optical properties, while the arrays without any KOH treatment failed to emit light, the ones with 3- and 5-min KOH treatment exhibit excellent optical uniformity and negligible blue shift. Most arrays treated for 5 min demonstrate superior light output power (LOP) and optoelectronic efficiency, with the 5 µm pixel arrays exhibiting unexpectedly high performance. The results suggest that extending the KOH wet treatment time effectively mitigates sidewall defects, reduces non-radiative recombination, and enhances surface roughness, thereby minimizing optical losses. These findings provide valuable insights for optimizing the fabrication of high-performance GaN-based red μLEDs and contribute to the development of stable, high-quality small-pixel μLEDs for advanced display and lighting applications. Full article

The Internet of Underwater Things (IoUT) has attracted significant attention from researchers due to the fact that seventy percent of the Earth’s surface is covered by water. Reliable underwater communication is the enabler of IoUT. Different carriers, such as electromagnetic waves, sound, and light, are used to transmit data through the water. Among these, optical waves are considered promising due to their high data rates and relatively good bandwidth efficiency, as water becomes transparent to light in the visible spectrum (400–700 nm). However, limitations such as link range, path loss, and turbulence lead to low power and, consequently, a low signal-to-noise ratio (SNR) at the receiver. In this article, we present the design of a smart transceiver for bidirectional communication. The system adapts the divergence angle of the optical beam from the transmitter based on the power of the signal received. This paper details the real-time data transmission process, where the transmitting station consists of a light fidelity (Li-Fi) transmitter with a 470 nm blue-light-emitting diode (LED) and a software-defined radio (SDR) for underwater optical communication. The receiving station is equipped with a Li-Fi receiver, which includes a photodetector with a wide field of view and an SDR. Furthermore, we use pulse position modulation (PPM), which demonstrates promising results for real-time transmission. A key innovation of this paper is the integration of the Li-Fi system with the SDR, while the system adapts dynamically using a servo motor and an Arduino microcontroller assembly. The experimental results show that this approach not only increases throughput but also enhances the robustness and efficiency of the system. Full article

Photoacoustic imaging (PAI) is an emerging modality that merges optical and ultrasound imaging to provide high-resolution and functional insights into biological tissues. This technique leverages the photoacoustic effect, where tissue absorbs pulsed laser light, generating acoustic waves that are captured to reconstruct images. While lasers have traditionally been the light source for PAI, their high cost and complexity drive interest towards alternative sources like light-emitting diodes (LEDs). This study evaluates the feasibility of using an avalanche oscillator to drive high-power LEDs in a basic photoacoustic imaging system. An avalanche oscillator, utilizing semiconductor avalanche breakdown to produce high-voltage pulses, powers LEDs to generate short, high-intensity light pulses. The system incorporates an LED array, an ultrasonic transducer, and an amplifier for signal detection. Key findings include the successful generation of short light pulses with sufficient intensity to excite materials and the system’s capability to produce detectable photoacoustic signals in both air and water environments. While LEDs demonstrate cost-effectiveness and portability advantages, challenges such as lower power and broader spectral bandwidth compared to lasers are noted. The results affirm that LED-based photoacoustic systems, though currently less advanced than laser-based systems, present a promising direction for affordable and portable imaging technologies. Full article

Liquid organic hydrogen carriers (LOHCs) are recognized as promising sustainable hydrogen (H₂) carriers due to their high volumetric capacity and ability to store H₂ at ambient conditions, eliminating the need for energy-intensive liquefaction or compression processes associated with H₂ or ammonia gas. One of the main current drawbacks, however, is LOHCs’ high energy demand for H₂ release. This work presents the photo-induced liberation of H₂ from formic acid (FA) as a liquid H₂ carrier, using visible light and well-established 5 wt% palladium nanoparticles supported over carbon (Pd/C). We show that low-power light-emitting diodes (LEDs) produced higher gas flow than their thermal baseline (35 $°$C), with 27.2 mL/min and 7.72 mL/min, respectively. Further, the rate of gas evolved with light intensity, catalyst loading, and the concentration of FA. Light-induced dehydrogenation shows similar deactivation as the known thermal mechanisms, such as the decreased Pd²⁺/Pd⁰ ratio and Pd nanoparticle agglomeration. Hence, these observations suggest a photothermal mechanism, whereby the LED provides heat efficiently absorbed by the Pd/C catalyst and enhanced by Pd’s ability to absorb light, thereby driving the FA dehydrogenation reaction at ambient conditions. Full article