Search Results (1,275)

In this study, enhancement- and depletion-mode (E- and D-mode) GaN-based 120 nm-wide fin-gated multiple nanochannel metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) were manufactured on the epitaxial Al_0.83In_0.17N/GaN/Al_0.18Ga_0.82N/GaN two-dimensional electron gas (2DEG) channel layers grown on Si substrates using a metal-organic chemical vapor deposition system. The oxide layer grown directly by the photoelectrochemical oxidation method was used as the gate oxide layer in D-mode MOS-HEMTs. Furthermore, E-mode MOS-HEMTs used ferroelectric stacked LiNbO₃/HfO₂/Al₂O₃ layers as the gate oxide layers. The 120 nm-wide multiple nanochannels and various-length source field plates (SFPs) were fabricated and incorporated into monolithic complementary MOS-HEMTs (CMOS-HEMTs) consisting of D- and E-mode MOS-HEMTs. The resulting monolithic unskewed inverter was achieved by modulating the drain-source current of the D-mode MOS-HEMTs. The noise low margin of 2.03 V and noise high margin of 2.10 V of the unskewed monolithic inverter were obtained. From the dynamic experimental results, the rising time and falling time of the unskewed monolithic inverter were 4.9 μs and 3.2 μs, respectively. The breakdown voltage could be improved by incorporating an SFP. When the SFP edge was located at the center between the gate electrode and the drain electrode, the maximum breakdown voltage of 855 V was obtained. Full article

Interlayer-sliding ferroelectricity in van der Waals bilayers enables ultralow-power switching, but practical devices are often limited by contact/interface scattering and weak coupling between polarization and transport. We propose homophase lateral architectures based on bilayer Janus MoSSe: a 1T/2H/1T ferroelectric tunnel homojunction and an H-phase lateral p–i–n photodetector (artificially doped electrode). Metallic 1T electrodes largely eliminate contact barriers and maximize polarization-driven tunneling modulation. Using non-equilibrium Green’s function–density functional theory (Perdew–Burke–Ernzerhof approximation, without explicit spin–orbit coupling), we find that AB to BA sliding reduces the current from the nA range to the pA range, with the minimum current of|I_OFF|_min = 2.83 pA, yielding giant tunneling electroresistance up to 5.3 × 10⁴%. Projected local density of states reveals a non-rigid long-range potential redistribution that reshapes the tunneling barrier and opens high-transmission channels. In the p–i–n photodetector, the response is strongly anisotropic and stacking-dependent: AB reaches photocurrent density J_ph ≈ 7.2 µA·mm⁻² at 2.6 eV for in-plane light versus ≈ 2.9 µA·mm⁻² at 3.5 eV for out-of-plane, and exceeds BA by 1.5–1.8 times due to density of states advantages and Mo-d orbital selection rules. Bilayer Janus MoSSe therefore provides a reconfigurable platform for high-contrast memory and polarization-sensitive photodetection. Full article

As emerging nonvolatile memory devices, ferroelectric field-effect transistors (FeFETs) have attracted significant attention for memory applications. However, due to the stochastic nature of fabrication processes and material properties, FeFETs exhibit pronounced device-to-device (DTD) variations, leading to threshold voltage dispersion and inconsistency in memory window (MW), which severely constrain array-level performance and reliability. In this study, a compact model-based variability analysis methodology for FeFETs has been proposed. Specifically, the Preisach ferroelectric (FE) hysteresis model was combined with the MIT Virtual Source (MVS) physical compact model to establish a macro-model for FeFETs, and statistical simulations were performed to evaluate device-level variations. Using the proposed framework, how fluctuations in two key FE parameters, film thickness (t_FE) and coercive field (E_C), affect FeFET transfer characteristics, threshold voltage (V_TH), and MW was systematically investigated. Monte Carlo (MC) simulations were further conducted to quantify the distribution width and statistical features of V_TH under different variability scenarios. The results indicate that random fluctuations in process-related parameters broaden the FeFET I_d-V_g characteristics, induce shifts in high/low threshold voltages, and cause MW variations. Moreover, when t_FE and E_C fluctuate simultaneously, the dispersions of V_TH and MW become significantly larger than those induced by a single-parameter fluctuation. The proposed compact-modeling framework and variability analysis approach enables the efficient evaluation of parameter tolerance and performance margin in FeFET arrays, providing guidance for storage-array design. Full article

Emerging non-volatile memories based on ferroelectric materials are currently under development to be integrated in the back-end-of-line of advanced complementary metal-oxide-semiconductor (CMOS) nodes. A life cycle assessment (LCA) over 16 impact categories has been carried out to compare planar (2D) and vertical (3D) integration strategies for the manufacturing of Hf_0.5Zr_0.5O₂-based ferroelectric capacitors on a 22 nm CMOS technology node. The LCA demonstrates that the 3D approach allows us to reduce the environmental impacts by up to 20% over several impact categories. The device isolation by a single chemical–mechanical polishing (CMP) step instead of the standard photolithography and plasma etching processes proved to be the main source of reduction on the overall environmental footprint. Full article

The properties of a Ca₉La(VO₄)₇ single crystal were studied using dielectric spectroscopy and second-harmonic generation. The crystal structure of Ca₉La(VO₄)₇ grown using the Czochralski technique was refined using single-crystal data. The distribution of Ca²⁺ and La³⁺ cations over structural positions was determined. The crystal structure refinement results were compared with those obtained previously from powder X-ray diffraction data. It was shown that the refinement carried out using two different data sets leads to approximately the same results for the distances in the polyhedra, but their distortion is significantly less in the case of using single-crystal data for calculation. Dielectric properties and conductivity measurements were performed on polished single-crystal wafers cut parallel and perpendicular to the c axis. Second-harmonic generation and dielectric temperature measurements revealed the presence of a reversible ferroelectric first-order phase transition at about 1224 K from the ferroelectric β-phase (space group R3c) to the paraelectric β′-phase. The ferroelectric–paraelectric phase transition is accompanied by a complex structural rearrangement, including a 60° rotation of the V1O₄ tetrahedron, as well as slight displacements of the Ca²⁺ and La³⁺ cations. It has been shown that the conductivity differs only slightly along the polar axis and perpendicular to it. Above the phase transition temperature, the activation energy of the conductivity is the same for all directions, E_a~1.2 eV. The influence of composition on the phase transition temperature and the formation of ferroelectric and nonlinear optical properties is discussed. Full article

In this work, biodegradable poly(vinyl alcohol) (PVA) and ferroelectric poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) nanofibers were successfully fabricated via co-electrospinning. The morphology and microstructure of co-electrospun PVA/P(VDF-HFP) nanofibers were analyzed, demonstrating that P(VDF-HFP) incorporation significantly affected fiber diameter and phase distribution. These structural features altered the fiber diameter and surface area of the co-electrospun system, thereby affecting interfacial polarization and the resulting dielectric and energy storage performance. As a result, the dielectric constant of the PVA/P(VDF-HFP) nanofibers (M1) was enhanced by up to 1.8 times compared with pure PVA nanofibers (M0), owing to interfacial polarization arising from increased surface charge accumulation at the PVA/P(VDF-HFP) interfaces. Meanwhile, dielectric loss and electrical conductivity were effectively controlled, indicating improved electrical stability of the co-electrospun system. Furthermore, ferroelectric and energy storage analyses revealed that appropriate incorporation of P(VDF-HFP) and phase distribution significantly enhanced polarization and energy storage performance. The energy storage density increased from 0.83 to 3.21 mJ cm⁻³ at 20 MV m⁻¹, corresponding to an improvement of 287% while maintaining a high energy efficiency of approximately 90%. Owing to their favorable dielectric properties, mechanical flexibility, and environmental compatibility, the co-electrospun PVA/P(VDF-HFP) nanofibers demonstrate great potential for low-field wearable and biomedical energy storage devices. Full article

The effect of Mn addition on the structural, dielectric, ferroelectric, and mechanical properties of Bi_0.5Na_0.5TiO₃ (BNT) and 0.94(Bi_0.5Na_0.5TiO₃)–0.06(BaTiO₃) (BNT–BT) ceramics was systematically investigated under identical processing conditions. Powders were calcined at 750 °C for 2 h and 900 °C for 2 h, followed by sintering at 1060 °C for 5 h. Mn contents of 0.5 and 5 mol% were selected to represent low-level substitution and near-saturation regimes. XRD confirmed single-phase perovskite formation within laboratory detection limits, while Raman spectroscopy revealed Mn-induced lattice distortions. Low Mn addition (0.5 mol%) enhanced densification and improved remanent polarization in BNT–BT (Pr = 33.5 μC/cm²). In contrast, 5 mol% Mn promoted grain coarsening, increased porosity, and reduced functional performance. Mechanical properties evaluated using two-parameter Weibull statistics showed composition-dependent variations in characteristic hardness and elastic modulus. The results demonstrate that Mn-doping effects depend strongly on both dopant concentration and host-lattice structural state, distinguishing beneficial substitution from defect-saturation behavior in lead-free BNT-based ceramics. Full article

The structural and electronic properties of the rare-earth-modified VOCl₂ monolayer (V_1−xX_xOCl₂, where X = Nd, Sm and Eu) are explored, by using the density functional theory calculations. In particular, the influence of the rare-earth (X) concentration on the physical properties is investigated for $x=0.166$, 0.083, and 0.062. The lattice parameters for all the optimized structures reveal an increase, while the crystal structure changes from rectangular (with Pmm2 space-group) to oblique for the $x=0.166$ concentration, preserving the original space-group for the other compositions. The structural analyses also revealed moderate changes in the VO₂Cl₄ distortions, after the inclusion of the rare-earth elements. On the other hand, the electronic properties have shown that the substitution of V by the Nd, Sm and Eu cations also preserves the semiconductor behavior of the studied system. The obtained results for the density of state reveal a non-zero total magnetization and show that the inclusion of the X cations promotes a transition from the antiferromagnetic to the ferrimagnetic state in the V_1−xX_xOCl₂ compositions. Furthermore, the modern theory of polarization reveals the ferroelectric character for the pure and modified system. These results show that the controlled substitution at the V-site with rare-earth elements simultaneously modifies the structural, electronic, magnetic and multiferroic properties of the VOCl₂ system, offering promising potential of the studied system for application in 2D-based materials and electronic devices with enhanced multifunctional properties. Full article

A capacitor modeled as a parallel combination of a resistance ($\mathrm{R}$) and a capacitance ($\mathrm{C}$) exhibits three distinct operating regimes when both parameters depend on the applied voltage (V): a positive-capacitance regime ($\mathrm{d}\mathrm{R}/\mathrm{R}>\mathrm{d}\mathrm{V}/\mathrm{V}$), an Ohmic regime ($\mathrm{d}\mathrm{R}/\mathrm{R}=\mathrm{d}\mathrm{V}/\mathrm{V}$), and a negative-capacitance regime ($\mathrm{d}\mathrm{R}/\mathrm{R}<\mathrm{d}\mathrm{V}/\mathrm{V}$). In the limit ($\mathrm{R}\to \mathrm{\infty }$), the device behaves as a conventional permittivity-based capacitor, whereas in the limit ($\mathrm{R}\to 0$), negative capacitance emerges due to nonlinear current–voltage characteristics. To verify this mechanism, we fabricated nanometer-spaced two-electrode structures using multi-walled carbon nanotubes (MWCNTs) and Si crystals. The measurements confirmed negative capacitance consistent with theoretical predictions. Unlike ferroelectric negative capacitance, the effect demonstrated here arises solely from the nonlinear I–V characteristics at the electrode interfaces, without involving any ferroelectric polarization dynamics. This negative capacitance can be interpreted as an equivalent inductance, enabling a two-dimensional tunable reactance element (TDTRE) that operates without electromagnetic coupling and is compatible with conventional IC technologies. Full article

Use of the morphotropic phase boundary (MPB) is a promising approach to enhance the electrocaloric effect in ferroelectric polymers. This is usually achieved by a composition method, and polymer processing near the MPB to tune electrocaloric response has attracted little attention. Here, the relative stability between disordered 3/1-helix and ordered all-trans conformations is leveraged by uniaxial stretching to improve the electrocaloric effect in relaxor ferroelectric polymers under low electric fields. It is found that the stretching technique enables a considerably more enhanced electrocaloric response in polymer composition near the MPB at room temperature, compared with counterparts corresponding to the relaxor phase. The electrocaloric-induced temperature change is found to be 4.5 K under a low electric field of 50 MV m⁻¹ in stretched relaxor ferroelectric polymers at room temperature, corresponding to a 60% enhancement over pristine counterparts. This result highlights the critical role of polymer processing in optimizing electrocaloric properties, especially near the MPB, and this can be extended to improve other functionalities, such as piezoelectric response, in relaxor ferroelectric polymers. Full article

(Na_0.5Bi_0.5)TiO₃-BaTiO₃-SrTiO₃-based lead-free piezoelectric ceramics are one of the possible replacements for Pb(Zr_1−xTi_x)O₃. Although they are considered a promising alternative actuator material due to their large electric-field-induced strains, they have several drawbacks, such as large strain hysteresis and the requirement of a high electric field to obtain large electric-field-induced strains. Sintering parameters strongly influence the electrical properties. Thus, the effect of sintering parameters, including atmosphere (air/oxygen), temperature (1150 °C~1250 °C) and holding time (1~20 h) on the sintering behavior of 0.685(Na_0.5Bi_0.5)TiO₃-0.065BaTiO₃-0.25SrTiO₃ electroceramics was studied. Then, the influence of sintering atmosphere on the piezoelectric, ferroelectric and dielectric properties of 0.685(Na_0.5Bi_0.5)TiO₃-0.065BaTiO₃-0.25SrTiO₃ electroceramics sintered at 1250 °C for 1 h was investigated. Sintering in oxygen improves density and restrains grain growth including abnormal grain growth. 0.685(Na_0.5Bi_0.5)TiO₃-0.065BaTiO₃-0.25SrTiO₃ electroceramics sintered in oxygen exhibit smaller grain size, higher density, similar inverse piezoelectric coefficient d₃₃* and lower strain hysteresis compared to air-sintered samples. The effect of sintering atmosphere on grain growth is explained using the mixed control mechanism of boundary migration. Full article

The von Neumann architecture faces severe bottlenecks in energy efficiency. Computing-in-Memory (CiM) addresses this by performing computations within memory arrays, yet analog CiM solutions suffer from precision loss and high overhead from analog-to-digital converters and digital-to-analog converters (ADCs/DACs). This paper proposes a novel ADC-free CiM architecture based on Ferroelectric Field-Effect Transistors (FeFETs). Logic circuits (NOR, NAND, XNOR) that store weight vectors within FeFETs were designed. Compared with analog CiM circuits, the FeFETs-CiM circuits proposed in this paper can reduce power consumption by 901.1 times and latency by 272.7 times. Furthermore, the design of 3-bit FeFETs-CiM gates was extended, demonstrating flexible configurability for scalable edge computing applications. Finally, an application specific FeFETs-CiM subtractor for k-nearest neighbor (kNN) distance calculation was designed, which energy consumption is as low as 85.02 fJ/OP and latency is as low as 0.56 ns under 500 MHz operation frequency. The calculation robustness of the FeFETs-CiM kNN distance calculator was ensured by simulating under different process corners and temperatures. The performance improvements owing to the proposed FeFETs-CiM CMOS circuits were evaluated by taking the kNN algorithm as an example, which can ensure the data access reduction by more than 300 times compared to von Neumann architecture. Full article

This study analyzed the low-frequency noise characteristics of nanosheet field-effect transistors (NSFETs) using technology computer-aided design (TCAD) simulations. In particular, the effects of shallow trench isolation (STI) depth and gate–insulator interface trap density on the device’s flicker noise power spectral density (PSD) were systematically evaluated. The simulation results show that as STI depth increases, excessive trap charges formed in the STI oxide can deplete or invert the substrate beneath the STI layer, reducing the threshold voltage of parasitic transistors and thereby increasing flicker noise. In contrast, the shallow STI structure’s trapped charge density was found to be lower than in thicker structures. Additionally, when an HfO₂–ZrO₂ (HZO)-based ferroelectric insulator is applied, improved gate–field control and reduced trap-induced noise are observed compared to HfO₂. Optimization results indicate that the optimal noise performance is achieved with an STI depth of 3 nm and a SiO₂/silicon interface trap density of 1 × 10¹⁰ eV⁻¹cm⁻². This study provides a design direction for low-noise NSFETs through structural (STI) and material (interface traps and HZO) optimization and is expected to contribute to the development of next-generation low-power, high-reliability logic devices. Full article

In this work, we report a dual-mode ferroelectrically programmable on-chip antenna. The antenna is built on a silicon wafer using complementary metal-oxide semiconductor (CMOS) processes and exhibits two programmable resonant modes: one in the super high frequency (SHF) range and one in the extremely high frequency (EHF) range. The SHF mode resonates at 8.5 GHz and exhibits ultrawideband (UWB) behavior, while the EHF mode resonates at 36.6 GHz. Both resonance frequencies can be tuned in a non-volatile fashion by controlling the ferroelectric polarization state of a Hafnium Zirconium Oxide (HZO) varactor monolithically integrated into the feed line. This programmability arises from the ferroelectric switching of the embedded HZO film, which results in a non-volatile variation of its permittivity upon application of a voltage pulse. Ferroelectric switching occurs at approximately ±3 V and induces maximum resonance frequency shifts of 381 MHz for the SHF mode and 3 GHz for the EHF mode, corresponding to fractional frequency changes of 4.5% and 8.3%, respectively. Unlike previously reported ferroelectrically tunable antennas, our reported antenna combines full integration, CMOS compatibility, higher operating frequency, compact footprint, and non-volatile programmability. Full article

Dielectric capacitors, characterized by ultra-fast charge/discharge speeds and high power densities, are widely used in modern electronic power systems. However, their low energy density and poor thermal stability limit applications. In this study, SrBi_3.25La_0.75Ti₄O₁₅ (SBLT) ferroelectric thin films were prepared by the sol–gel method. We systematically investigated the effect of annealing temperature on microstructural evolution, electrical properties, and energy storage performance. The SBLT film annealed at 700 °C exhibited optimal performance, achieving a balanced enhancement in polarization and breakdown strength, with an energy storage density of 48.66 J cm⁻³ and an efficiency of 78%. The material also demonstrated excellent thermal stability (30–175 °C) and frequency stability (0.1–100 kHz). These findings not only validate the potential of SBLT as a next-generation energy storage dielectric but also provide a practical solution for applications in semiconductor technology. Full article