Emerging 2D Materials for Future Nanoelectronics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: 30 May 2026 | Viewed by 778

Special Issue Editor


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Guest Editor
School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, China
Interests: nanoelectronics; research on the physical properties of novel semiconductor materials; non-volatile memory materials and devices; two-dimensional flexible materials and devices

Special Issue Information

Dear Colleagues,

Since the isolation of graphene in 2004, two-dimensional (2D) materials have emerged as a transformative class of nanomaterials with extraordinary electronic, optical, and mechanical properties. Over the past two decades, the family of 2D materials has expanded dramatically to include transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), black phosphorus, MXenes, and numerous other layered compounds, each offering unique characteristics for next-generation electronic applications.

This Special Issue, entitled "Emerging 2D Materials for Future Nanoelectronics," aims to provide a comprehensive platform for showcasing the latest advances in the synthesis, characterization, and device integration of 2D materials for nanoelectronic applications. We aim to showcase cutting-edge research that addresses both fundamental scientific questions and practical challenges in translating these materials into functional devices.

Current developments in this field include novel 2D semiconductors with tunable band gaps, advances in large-scale synthesis and transfer techniques, heterojunction engineering for high-performance transistors, neuromorphic computing architectures, flexible and wearable electronics, and non-volatile memory devices based on 2D materials.

We welcome the submission of original research articles, reviews, and communications covering topics including but not limited to synthesis and characterization of emerging 2D materials, 2D material-based field-effect transistors and logic devices, memristors and neuromorphic devices, flexible and stretchable nanoelectronics, van der Waals heterostructures, and theoretical/computational studies on 2D electronic systems.

Dr. Yuehua Xu
Guest Editor

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Keywords

  • two-dimensional materials
  • nanoelectronics
  • transition metal dichalcogenides
  • memristors
  • van der Waals heterostructures
  • flexible electronics
  • field-effect transistors
  • neuromorphic computing

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Published Papers (1 paper)

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Research

18 pages, 2508 KB  
Article
Giant Tunneling Electroresistance and Anisotropic Photoresponse in Sliding Ferroelectric Homojunctions Based on Bilayer Janus MoSSe
by Huxiao Yang and Yuehua Xu
Nanomaterials 2026, 16(6), 370; https://doi.org/10.3390/nano16060370 - 18 Mar 2026
Viewed by 429
Abstract
Interlayer-sliding ferroelectricity in van der Waals bilayers enables ultralow-power switching, but practical devices are often limited by contact/interface scattering and weak coupling between polarization and transport. We propose homophase lateral architectures based on bilayer Janus MoSSe: a 1T/2H/1T ferroelectric tunnel homojunction and an [...] Read more.
Interlayer-sliding ferroelectricity in van der Waals bilayers enables ultralow-power switching, but practical devices are often limited by contact/interface scattering and weak coupling between polarization and transport. We propose homophase lateral architectures based on bilayer Janus MoSSe: a 1T/2H/1T ferroelectric tunnel homojunction and an H-phase lateral p–i–n photodetector (artificially doped electrode). Metallic 1T electrodes largely eliminate contact barriers and maximize polarization-driven tunneling modulation. Using non-equilibrium Green’s function–density functional theory (Perdew–Burke–Ernzerhof approximation, without explicit spin–orbit coupling), we find that AB to BA sliding reduces the current from the nA range to the pA range, with the minimum current of|IOFF|min = 2.83 pA, yielding giant tunneling electroresistance up to 5.3 × 104%. Projected local density of states reveals a non-rigid long-range potential redistribution that reshapes the tunneling barrier and opens high-transmission channels. In the p–i–n photodetector, the response is strongly anisotropic and stacking-dependent: AB reaches photocurrent density Jph ≈ 7.2 µA·mm−2 at 2.6 eV for in-plane light versus ≈ 2.9 µA·mm−2 at 3.5 eV for out-of-plane, and exceeds BA by 1.5–1.8 times due to density of states advantages and Mo-d orbital selection rules. Bilayer Janus MoSSe therefore provides a reconfigurable platform for high-contrast memory and polarization-sensitive photodetection. Full article
(This article belongs to the Special Issue Emerging 2D Materials for Future Nanoelectronics)
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