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Nanomaterials
Special Issues
Structure, Properties and Device Applications of 2D Nanomaterials
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Structure, Properties and Device Applications of 2D Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: closed (20 July 2024) | Viewed by 21519

Special Issue Editor

Dr. Xiaohui Hu

E-Mail Website
Guest Editor
College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
Interests: 2D materials; metal-semiconductor contact; interfaces; Schottky barrier; electronic properties; magnetic properties

Special Issue Information

Dear Colleagues,

Since the fabrication of graphene in 2004, a large family of 2D materials has been reported, including transition-metal dichalcogenides, phosphorene, silicene, hexagonal boron nitride, MoSi2N4, etc. Due to their unique and fascinating physical and chemical properties, 2D materials present potential applications in electronic devices, catalysts, and energy storage and conversion. Two-dimensional magnetic materials are important for spintronic devices. Recently, the 2D ferromagnetic materials CrI3, Cr2Ge2Te6, and Fe3GeTe2 have been successfully fabricated. Spintronic devices based on 2D ferromagnetic materials, such as tunneling magnetic junctions and spin field-effect transistors, have been demonstrated to exhibit outstanding performance. These findings not only opened new avenues for fundamental research on magnetism in systems with reduced dimensionality, but also provided exciting new opportunities for 2D spintronics.

This Special Issue mainly focuses on the structure and properties of novel 2D materials and on device applications in several fields encompassing nanoelectronics, transistors, sensors, and spintronics.

Dr. Xiaohui Hu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D materials
  • heterostructures
  • interfaces
  • nanoelectronics
  • transistors
  • sensors
  • electronic properties
  • magnetic properties
  • spintronics

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Published Papers (5 papers)

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Research

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12 pages, 7933 KiB  
Article
The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces
by Xin Pei, Xiaohui Hu, Tao Xu and Litao Sun
Nanomaterials 2024, 14(13), 1075; https://doi.org/10.3390/nano14131075 - 24 Jun 2024
Cited by 1 | Viewed by 5585
Abstract
The contact resistance formed between MoS2 and metal electrodes plays a key role in MoS2-based electronic devices. The Schottky barrier height (SBH) is a crucial parameter for determining the contact resistance. However, the SBH is difficult to modulate because of [...] Read more.
The contact resistance formed between MoS2 and metal electrodes plays a key role in MoS2-based electronic devices. The Schottky barrier height (SBH) is a crucial parameter for determining the contact resistance. However, the SBH is difficult to modulate because of the strong Fermi-level pinning (FLP) at MoS2-metal interfaces. Here, we investigate the FLP effect and the contact types of monolayer and multilayer MoS2-metal van der Waals (vdW) interfaces using density functional theory (DFT) calculations based on Perdew–Burke–Ernzerhof (PBE) level. It has been demonstrated that, compared with monolayer MoS2-metal close interfaces, the FLP effect can be significantly reduced in monolayer MoS2-metal vdW interfaces. Furthermore, as the layer number of MoS2 increases from 1L to 4L, the FLP effect is first weakened and then increased, which can be attributed to the charge redistribution at the MoS2-metal and MoS2-MoS2 interfaces. In addition, the p-type Schottky contact can be achieved in 1L–4L MoS2-Pt, 3L MoS2-Au, and 2L–3L MoS2-Pd vdW interfaces, which is useful for realizing complementary metal oxide semiconductor (CMOS) logic circuits. These findings indicated that the FLP and contact types can be effectively modulated at MoS2-metal vdW interfaces by selecting the layer number of MoS2. Full article
(This article belongs to the Special Issue Structure, Properties and Device Applications of 2D Nanomaterials)
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14 pages, 3478 KiB  
Article
In Situ Polymer-Solution-Processed Graphene–PDMS Nanocomposites for Application in Intracranial Pressure Sensors
by Hua Hong, Junjie Zhang, Yuchen Zhu, Stephen D. Tse, Hongxuan Guo, Yilin Lai, Yubo Xi, Longbing He, Zhen Zhu, Kuibo Yin and Litao Sun
Nanomaterials 2024, 14(5), 399; https://doi.org/10.3390/nano14050399 - 21 Feb 2024
Cited by 5 | Viewed by 2209
Abstract
Polydimethylsiloxane (PDMS) has emerged as a promising candidate for the dielectric layer in implantable sensors due to its exceptional biocompatibility, stability, and flexibility. This study introduces an innovative approach to produce graphene-reinforced PDMS (Gr-PDMS), where graphite powders are exfoliated into mono- and few-layer [...] Read more.
Polydimethylsiloxane (PDMS) has emerged as a promising candidate for the dielectric layer in implantable sensors due to its exceptional biocompatibility, stability, and flexibility. This study introduces an innovative approach to produce graphene-reinforced PDMS (Gr-PDMS), where graphite powders are exfoliated into mono- and few-layer graphene sheets within the polymer solution, concurrently forming cross-linkages with PDMS. This method yields a uniformly distributed graphene within the polymer matrix with improved interfaces between graphene and PDMS, significantly reducing the percolation threshold of graphene dispersed in PDMS from 10% to 5%. As-synthesized Gr-PDMS exhibits improved mechanical and electrical properties, tested for potential use in capacitive pressure sensors. The results demonstrate an impressive pressure sensitivity up to 0.0273 kpa−1, 45 times higher than that of pristine PDMS and 2.5 times higher than the reported literature value. The Gr-PDMS showcases excellent pressure sensing ability and stability, fulfilling the requirements for implantable intracranial pressure (ICP) sensors. Full article
(This article belongs to the Special Issue Structure, Properties and Device Applications of 2D Nanomaterials)
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25 pages, 11397 KiB  
Article
A Study of the Mechanical Behaviour of Boron Nitride Nanosheets Using Numerical Simulation
by Nataliya A. Sakharova, André F. G. Pereira and Jorge M. Antunes
Nanomaterials 2023, 13(20), 2759; https://doi.org/10.3390/nano13202759 - 13 Oct 2023
Cited by 5 | Viewed by 1964
Abstract
Hexagonal boron nitride (h-BN) nanosheets are attractive materials for various applications that require efficient heat transfer, surface adsorption capability, biocompatibility, and flexibility, such as optoelectronics and power electronics devices, nanoelectromechanical systems, and aerospace industry. Knowledge of the mechanical behavior of boron nitride nanosheets [...] Read more.
Hexagonal boron nitride (h-BN) nanosheets are attractive materials for various applications that require efficient heat transfer, surface adsorption capability, biocompatibility, and flexibility, such as optoelectronics and power electronics devices, nanoelectromechanical systems, and aerospace industry. Knowledge of the mechanical behavior of boron nitride nanosheets is necessary to achieve accurate design and optimal performance of h-BN-based nanodevices and nanosystems. In this context, the Young’s and shear moduli and Poisson’s ratio of square and rectangular boron nitride nanosheets were evaluated using the nanoscale continuum modeling approach, also known as molecular structural mechanics. The latter allows robust and rapid assessment of the elastic constants of nanostructures with graphene-like lattices. To date, there is a lack of systematic research regarding the influence of input parameters for numerical simulation, loading conditions, size, and aspect ratio on the elastic properties of the h-BN nanosheets. The current study contributes to filling this gap. The results allow, on the one hand, to point out the input parameters that lead to better agreement with those available in the literature. On the other hand, the Young’s and shear moduli, and Poisson’s ratio calculated in the present work contribute to a benchmark for the evaluation of elastic constants of h-BN nanosheets using theoretical methods. Full article
(This article belongs to the Special Issue Structure, Properties and Device Applications of 2D Nanomaterials)
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Review

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18 pages, 5639 KiB  
Review
Atomic Fabrication of 2D Materials Using Electron Beams Inside an Electron Microscope
by Mingrui Zhou, Wei Zhang, Jinyi Sun, Fuqiang Chu, Guocai Dong, Meng Nie, Tao Xu and Litao Sun
Nanomaterials 2024, 14(21), 1718; https://doi.org/10.3390/nano14211718 - 28 Oct 2024
Viewed by 3581
Abstract
Two-dimensional (2D) materials have garnered increasing attention due to their unusual properties and significant potential applications in electronic devices. However, the performance of these devices is closely related to the atomic structure of the material, which can be influenced through manipulation and fabrication [...] Read more.
Two-dimensional (2D) materials have garnered increasing attention due to their unusual properties and significant potential applications in electronic devices. However, the performance of these devices is closely related to the atomic structure of the material, which can be influenced through manipulation and fabrication at the atomic scale. Transmission electron microscopes (TEMs) and scanning TEMs (STEMs) provide an attractive platform for investigating atomic fabrication due to their ability to trigger and monitor structural evolution at the atomic scale using electron beams. Furthermore, the accuracy and consistency of atomic fabrication can be enhanced with an automated approach. In this paper, we briefly introduce the effect of electron beam irradiation and then discuss the atomic structure evolution that it can induced. Subsequently, the use of electron beams for achieving desired structures and patterns in a controllable manner is reviewed. Finally, the challenges and opportunities of atomic fabrication on 2D materials inside an electron microscope are discussed. Full article
(This article belongs to the Special Issue Structure, Properties and Device Applications of 2D Nanomaterials)
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42 pages, 14914 KiB  
Review
Defects and Defect Engineering of Two-Dimensional Transition Metal Dichalcogenide (2D TMDC) Materials
by Moha Feroz Hossen, Sachin Shendokar and Shyam Aravamudhan
Nanomaterials 2024, 14(5), 410; https://doi.org/10.3390/nano14050410 - 23 Feb 2024
Cited by 22 | Viewed by 6774
Abstract
As layered materials, transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials. Interestingly, the characteristics of these materials are transformed from bulk to monolayer. The atomically thin TMDC materials can be a good alternative to group III–V and graphene because of their emerging [...] Read more.
As layered materials, transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials. Interestingly, the characteristics of these materials are transformed from bulk to monolayer. The atomically thin TMDC materials can be a good alternative to group III–V and graphene because of their emerging tunable electrical, optical, and magnetic properties. Although 2D monolayers from natural TMDC materials exhibit the purest form, they have intrinsic defects that limit their application. However, the synthesis of TMDC materials using the existing fabrication tools and techniques is also not immune to defects. Additionally, it is difficult to synthesize wafer-scale TMDC materials for a multitude of factors influencing grain growth mechanisms. While defect engineering techniques may reduce the percentage of defects, the available methods have constraints for healing defects at the desired level. Thus, this holistic review of 2D TMDC materials encapsulates the fundamental structure of TMDC materials, including different types of defects, named zero-dimensional (0D), one-dimensional (1D), and two-dimensional (2D). Moreover, the existing defect engineering methods that relate to both formation of and reduction in defects have been discussed. Finally, an attempt has been made to correlate the impact of defects and the properties of these TMDC materials. Full article
(This article belongs to the Special Issue Structure, Properties and Device Applications of 2D Nanomaterials)
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