Search Results (331)

This work presents a comprehensive study of the structural, luminescent, and photoconversion properties of epitaxial composite phosphor converters based on single crystalline films of Ce³⁺-activated Ca_2−xY_1+xMg_1+xSc_1−xSi₃O₁₂:Ce (x = 0–0.25) (CYMSSG:Ce) garnet, grown using the liquid phase epitaxy (LPE) method on single-crystal Y₃Al₅O₁₂ (YAG) and YAG:Ce substrates. The main goal of this study is to elucidate the structure–composition–property relationships that influence the photoluminescence and photoconversion efficiency of these film–substrate composite converters, aiming to optimize their performance in high-power white light-emitting diode (WLED) applications. Systematic variation in the Y³⁺/Sc³⁺/Mg²⁺ cationic ratios within the garnet structure, combined with the controlled tuning of film thickness (ranging from 19 to 67 µm for CYMSSG:Ce/YAG and 10–22 µm for CYMSSG:Ce/YAG:Ce structures), enabled the precise modulation of their photoconversion properties. Prototypes of phosphor-converted WLEDs (pc-WLEDs) were developed based on these epitaxial structures to assess their performance and investigate how the content and thickness of SCFs affect the colorimetric properties of SCFs and composite converters. Clear trends were observed in the Ce³⁺ emission peak position, intensity, and color rendering, induced by the Y³⁺/Sc³⁺/Mg²⁺ cation substitution in the film converter, film thickness, and activator concentrations in the substrate and film. These results may be useful for the design of epitaxial phosphor converters with tunable emission spectra based on the epitaxially grown structures of garnet compounds. Full article

We report an advanced passivation strategy for perovskite solar cells (PSCs) by introducing core–shell structured perovskite quantum dots (PQDs), composed of methylammonium lead bromide (MAPbBr₃) cores and tetraoctylammonium lead bromide (tetra-OAPbBr₃) shells, during the antisolvent-assisted crystallization step. The epitaxial compatibility between the PQDs and the host perovskite matrix enables effective passivation of grain boundaries and surface defects, thereby suppressing non-radiative recombination and facilitating more efficient charge transport. At an optimal PQD concentration of 15 mg/mL, the modified PSCs demonstrated a remarkable increase in power conversion efficiency (PCE) from 19.2% to 22.85%. This enhancement is accompanied by improved device metrics, including a rise in open-circuit voltage (Voc) from 1.120 V to 1.137 V, short-circuit current density (Jsc) from 24.5 mA/cm² to 26.1 mA/cm², and fill factor (FF) from 70.1% to 77%. Spectral response analysis via incident photon-to-current efficiency (IPCE) revealed enhanced photoresponse in the 400–750 nm wavelength range. Additionally, long-term stability assessments showed that PQD-passivated devices retained more than 92% of their initial PCE after 900 h under ambient conditions, outperforming control devices which retained ~80%. These findings underscore the potential of in situ integrated PQDs as a scalable and effective passivation strategy for next-generation high-efficiency and stable perovskite photovoltaics. Full article

The precise control of thermal–kinetic parameters governs epitaxial perfection in functional oxide heterostructures. Herein, using Iridium/MgO(100) as a model system, the traditional “low-speed/high-temperature” paradigm is revolutionized through the combination of ab initio calculations, multiscale simulations, and subsequent deposition experiments. First-principles modeling reveals the mechanisms of Volmer–Weber (VW, island growth mode) nucleation at low coverage and Stranski–Krastanov (SK, layer-plus-island growth) transitions driven by interface metallization, stress release, and energy reduction, which facilitates coherent monolayer formation by lowering the energy barrier by ~34%. Molecular dynamics simulations demonstrate that the strategic co-optimization of substrate temperature (T_sub) and deposition rate (V_dep) induces an abrupt cliff-like drop in mosaic spread. Experimental validations confirm that this T-V synergy achieves unprecedented interfacial coherence, whereby AFM roughness reaches 0.34 nm (RMS) and the XRC-FWHM of 0.13° approaches single-crystal benchmarks. Notably, our novel “accelerated heteroepitaxy” protocol reduces growth time without compromising quality, addressing the efficiency–quality paradox in industrial-scale diamond substrate fabrication. These findings establish universal thermal–kinetic design principles applicable to refractory metal/oxide heterostructures for next-generation quantum sensors and high-power electronic devices. Full article

BaBiO₃ has recently gained significant research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications. In order to grow a variety of structures, a versatile deposition tool such as molecular beam epitaxy must be employed. In this work, the molecular beam epitaxy growth of BaBiO₃ on SrTiO₃(001) and MgO(001) substrates is studied. When grown by molecular beam epitaxy on SrTiO₃(001) or MgO(001) substrates, BaBiO₃ is known to have two competing orientations, namely (001) and (011). Characterization of the thin film is carried out by X-ray diffraction, X-ray reflectivity, atomic force microscopy, Rutherford backscattering, and transmission electron microscopy. Pathways to block the growth of BaBiO₃(011) and to grow only the technologically relevant BaBiO₃(001) are described for both substrates. An understanding of the enabling mechanism of the co-growth is established from an epitaxial point of view. This can be beneficially utilized for the growth of different compositions in the BaBiO₃ material family in a more controlled manner. Full article

Magnetic shape memory alloys have attracted considerable attention due to their multifunctional properties. Among these materials, Ni-Mn-Ga alloys are distinguished by their ability to achieve up to 10% strain when exposed to a magnetic field, a characteristic predominantly observed in single-crystal samples. Consequently, it is essential to develop nanomaterials with a crystal structure closely resembling that of a single crystal. In this study, an epitaxial Ni-Mn-Ga thin film was fabricated using Pulsed Laser Deposition on an Al₂O₃ $\left(11\overline{2}0\right)$ single-crystal substrate. The crystal structure was characterised through X-ray diffraction methodologies, such as symmetrical $2\theta -\omega$ scans, pole figures, and reciprocal space maps. The results indicated that the sample was mainly in a slightly distorted cubic austenite phase, and some incipient martensite phase also appeared. A detailed microstructural analysis, performed by transmission electron microscopy, confirmed that certain regions of the sample exhibited an incipient transformation to the martensite phase. Regions closer to the substrate retained the austenite phase, suggesting that the constraint imposed by the substrate inhibits the phase transition. These results indicate that it is possible to grow high crystalline quality thin films of Ni-Mn-Ga by Pulsed Laser Deposition. Full article

The main constituent of the planetary lithosphere is the dominant silicate mineral, olivine α-(Mg,Fe)₂SiO₄, which, along with associated minerals and the olivine-hosted inclusions, records the physical–chemical conditions during the crystal growth and transport to the planetary surface. However, there is a lack of physical–chemical information regarding the kinetic factors that regulate crystal growth during melt–rock, fluid–rock, and magma–rock interactions. Here, we conducted an experimental reaction between hydrated peridotite rock and basaltic melt and coupled this with a structural and elemental analysis of the quenched products by high-resolution transmission electron microscopy. The quenched products revealed crystallographically oriented oxide nanocrystals of ilmenite (Fe,Mg)(Ti,Si)O₃ that grew over the newly formed olivine in the boundary layer melt of the reaction zone. We established that the growth mechanism is epitaxial and is common to both experimental and natural systems. The kinetic model developed for shallow (<1 GPa) crystal growth requires open system conditions and the presence of melt or fluid. It implies that the current geodynamic models that consider natural ilmenite–olivine assemblage as a proxy for deep to ultra-deep (>>1 GPa) conditions should be revised. The resulting kinetic model has a wide range of geological implications—from disequilibrium mineral growth and olivine-hosted inclusion production to mantle metasomatism—and helps to clarify how geological reactions proceed at depth. Full article

We report the growth and optical characterization of single-crystal BiFe_1−xMn_xO₃ thin films directly on SrTiO₃/Si(001) substrates using molecular beam epitaxy. X-ray diffraction confirmed epitaxial growth, film crystallinity, and sharp interface quality. Scanning electron microscopy and energy dispersive X-ray spectroscopy verified uniform film morphology and successful Mn incorporation. Spectroscopic ellipsometry revealed a systematic bandgap reduction with increasing Mn concentration, from 2.7 eV in BiFeO₃ to 2.58 eV in BiFe_0.74Mn_0.26O₃, consistent with previous reports on Mn-doped BiFeO₃. These findings highlight the potential of BiFe₁₋_xMn_xO₃ films for bandgap engineering, advancing their integration into silicon-compatible multifunctional optoelectronic and photovoltaic applications. Full article

The Bijigou layered intrusion is located in the northern margin of the Yangtze block. Based on cumulus mineral assemblages, the intrusion is divided into three major units from the base upwards: the lower zone (LZ), dominated by olivine gabbro; the middle zone (MZ), composed of gabbro and Fe-Ti oxide ore layers; and the upper zone (UZ), characterized by (quartz) diorite. Previous studies reported various vermicular symplectite textures in layered intrusions, which are thought to be related to the magmatic evolution of the layered intrusions and the mineralization of vanadium–titanium magnetite. However, detailed studies on the specific reaction mechanism of those symplectites are lacking. In this study, the characteristics, mineral compositions, and crystal orientation relationships of minerals in symplectites from Fe-Ti oxide Fe-Ti oxide-rich gabbro are in the Bijigou layered intrusion investigated by an Electron Probe Microanalyzer (EPMA) and Electron Backscattered Diffraction (EBSD) to reveal the formation process of symplectites in gabbros. In the Fe-Ti oxide-rich gabbro, abundant amphibole + spinel (Amp₁ + Spl) symplectite and amphibole + plagioclase (Pl₂ + Amp₂) symplectite are developed between the primocryst plagioclase (Pl₁) and Fe-Ti oxide; Pl₂ had significantly higher An contents (An_92–97) relative to Pl₁. The Mg # for Amp₁ and Amp₂ was 0.78–1 and 0.6–0.84, respectively. Amphibole geothermometer calculations show Amp₁ and Amp₂ at 934–953 °C and 834–914 °C, suggesting that these symplectites crystallized at a late stage of magmatic evolution. The crystallographic orientation relationship between Amp₁ and Spl varies in different areas, and Spl has a particular orientation relationship with the external Ilm. Pl₂ and Amp₂ inherit the crystallographic orientation of Amp₁ and Pl₁, respectively. We speculate that in the Bijigou layered intrusions, Amp₁ + Spl and Pl₂ + Amp₂ were formed in two stages: Amp₁ + Spl symplectite due to Ilm epitaxial growth as a result of supersaturation and rapid nucleation; and Pl₂ + Amp₂ symplectite due to dissolution–precipitation. Full article

The precise fabrication of semiconductor-based photonic crystals with tailored optical properties is critical for advancing photonic devices. GaP(111) is a material of particular interest due to its high refractive index, wide optical bandgap, and pronounced optical anisotropy, offering unique opportunities for photonic applications. Its near-lattice matching with silicon substrates further facilitates integration with existing silicon-based technologies. In this study, we present the growth of high-quality GaP(111) thin films using gas-source molecular-beam epitaxy (GSMBE), achieving atomically smooth terraces for the homo-epitaxy of GaP(111). We demonstrate the fabrication of photonic crystal cavities from GaP(111), employing AlGaP(111) as a sacrificial layer, and achieve a quality factor of 1200 for the cavity mode with resonance around 1500 nm. This work highlights the potential of GaP(111) for advanced photonic architectures, particularly in applications requiring strong light confinement and nonlinear optical processes, such as second-harmonic and sum-frequency generation. Full article

This study comprehensively evaluates a non-weldable nickel-cobalt-based superalloy fabricated using laser powder bed fusion (LPBF) technology. The investigation systematically examined the impact of heat treatment, specifically solution treatment and solution treatment followed by aging treatment, on the microstructural characteristics and the evolution of residual stress within the alloy. The findings indicated that the as-built Ni-Co-based superalloy predominantly consists of equiaxed crystals and epitaxial columnar crystals, with no formation of the γ′ phase observed. After the solution treatment, the alloy experienced equiaxed columnar crystallization, recrystallization, and grain refinement. Additionally, a significant quantity of γ′ phases within the alloy exhibited a specific arrangement and precipitation. Following the aging treatment, there was an observed increase in the average dimensions of both the γ′ phase and the grains within the alloy. The evolution of residual stress distribution perpendicular to the construction direction in the alloy, both before and following heat treatment, was assessed using the contour method. The results showed that heat treatment progressively diminished the residual stress levels within the alloy. Furthermore, this study discusses the interrelationship between residual stress and the microstructural evolutions of nickel-cobalt-based superalloys throughout the heat treatment process. Full article

The anisotropic magnetoresistance (AMR) effect is widely used in microscale and nanoscale magnetic sensors. In this study, we investigate the correlation between AMR and the crystal structure, epitaxial relationship, and magnetic properties of Co₅₀Fe₅₀ thin films deposited on rigid MgO and flexible mica substrates. The AMR ratio is approximately 1.6% for CoFe films on mica, lower than the 2.5% observed in epitaxially grown films on MgO substrates. The difference is likely due to the well-defined easy axis in the single domain epitaxial thin films on MgO, which enhances the AMR ratio. Microscopic strain induced by lattice mismatch and bending on flexible substrates were determined using grazing incidence X-ray diffraction and extended X-ray absorption fine structure techniques. These results showed that neither microscopic nor macroscopic strain (below 0.5%) affects the AMR ratio on mica, suggesting its suitability for magnetic sensors in flexible and wearable devices. Additionally, investigating M-H loops under various growth temperatures, lattice mismatch conditions, and bending strains could further benefit the fabrication and integration of the micro-scale magnetic sensors in the microelectronic industry. Full article

Loss of implant function is a common complication in orthopaedic and dental surgery. Among the primary causes of implant failure are peri-implant infections which often result in implant removal. This study demonstrates the development of a new antimicrobial titanium coating with ZnO nanoparticles of various sizes and morphologies immobilised in poly(allylamine hydrochloride) and alginate multilayers, combined with epitaxially grown vaterite crystals. The coated samples were characterised with various methods (FTIR, XRD, SEM) and surface properties were evaluated via water contact angle and surface charge measurements. Zinc ion release was quantified using ICP-MS. The antimicrobial efficacy of the coatings was tested against Staphylococcus aureus, Staphylococcus epidermidis, and Candida albicans while the biocompatibility was tested with preosteoblast cells (MC3T3-E1). Results demonstrated the successful preparation of a calcium carbonate/ZnO composite coating with epitaxially grown vaterite on titanium surfaces. The Zn ions released from ZnO nanoparticles dramatically influenced the morphology of vaterite where a new flower-like morphology was observed. The coated titanium surfaces exhibited robust antimicrobial activity, achieving over 90% microbial viability reduction for Staphylococcus aureus, Staphylococcus epidermidis, and Candida albicans. Importantly, the released Zn²⁺ concentrations remained below the cytotoxicity limit for MC3T3-E1 cells, showing potential for safe and effective implant applications. Full article

Lithium niobate (LiNbO₃) has remarkable ferroelectric properties, and its unique crystal structure allows it to undergo significant spontaneous polarization. Lithium niobate plays an important role in the fields of electro-optic modulation, sensing and acoustics due to its excellent electro-optic and piezoelectric properties. Thin-film LiNbO₃ (TFLN) has attracted much attention due to its unique physical properties, stable properties and easy processing. This review introduces several main preparation methods for TFLN, including chemical vapor deposition (CVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), magnetron sputtering and Smartcut technology. The development of TFLN devices, especially the recent research on sensors, memories, optical waveguides and EO modulators, is introduced. With the continuous advancement of manufacturing technology and integration technology, TFLN devices are expected to occupy a more important position in future photonic integrated circuits. Full article

Epitaxial layers of water-soluble Sr₃Al₂O₆ were fabricated as sacrificial layers on SrTiO₃ (100) single-crystal substrates using the Pulsed Laser Deposition technique. This approach envisages the possibility of developing a new generation of micro-Solid Oxide Fuel Cells and micro-Solid Oxide Electrochemical Cells for portable energy conversion and storage devices. The sacrificial layer technique offers a pathway to engineering free-standing membranes of electrolytes, cathodes, and anodes with total thicknesses on the order of a few nanometers. Furthermore, the ability to etch the SAO sacrificial layer and transfer ultra-thin oxide films from single-crystal substrates to silicon-based circuits opens possibilities for creating a novel class of mixed electronic and ionic devices with unexplored potential. In this work, we report the growth mechanism and structural characterization of the SAO sacrificial layer. Epitaxial samarium-doped ceria films, grown on SrTiO3 substrates using Sr₃Al₂O₆ as a buffer layer, were successfully transferred onto silicon wafers. This demonstration highlights the potential of the sacrificial layer method for integrating high-quality oxide thin films into advanced device architectures, bridging the gap between oxide materials and silicon-based technologies. Full article

AlN-based bulk acoustic wave (BAW) filters have emerged as crucial components in 5G communication due to their high frequency, wide bandwidth, high power capacity, and compact size. This paper mainly reviews the basic principles and recent research advances of AlN-based BAW resonators, which are the backbone of BAW filters. We begin by summarizing the epitaxial growth of single-crystal, polycrystalline, and doped AlN films, with a focus on single-crystal AlN and ScAlN, which are currently the most popular. The discussion then extends to the structure and fabrication of BAW resonators, including the basic solidly mounted resonator (SMR) and the film bulk acoustic resonator (FBAR). The new Xtended Bulk Acoustic Wave (XBAW) technology is highlighted as an effective method to enhance filter bandwidth. Hybrid SAW/BAW resonators (HSBRs) combine the benefits of BAW and SAW resonators to significantly reduce temperature drift. The paper further explores the application of BAW resonators in ladder and lattice BAW filters, highlighting advancements in their design improvements. The frequency-reconfigurable BAW filter, which broadens the filter’s application range, has garnered substantial attention from researchers. Additionally, optimization algorithms for designing AlN-based BAW filters are outlined to reduce design time and improve efficiency. This work aims to serve as a reference for future research on AlN-based BAW filters and to provide insight for similar device studies. Full article