Search Results (1,296)

The continued performance scaling of AI gigafactories requires the development of energy-efficient devices to meet the rapidly growing global demand for AI services. Emerging materials offer promising opportunities to reduce energy consumption in such systems. In this work, we propose an electro-optic microring modulator that exploits a graphene (Gr) and transition-metal dichalcogenide (TMD) interface for phase modulation of data-bit signals. The interface is configured as a capacitor composed of a top Gr layer and a bottom WSe${}_2$ layer, separated by a dielectric Al${}_2$O${}_3$ film. This multilayer stack is integrated onto a silicon (Si) waveguide such that the microring is partially covered, with coverage ratios varying from 10% to 100%. In the design with the lowest power consumption, the device operates at 26.3 GHz and requires an energy of 5.8 fJ/bit under 10% Gr–TMD coverage while occupying an area of only 20 $\mathsf{\mu }$m${}^2$. Moreover, a modulation efficiency of $V_{\pi }L=$ 0.203 V$·$cm and an insertion loss of 6.7 dB are reported for the 10% coverage. The Gr-TMD-based microring modulator can be manufactured with standard fabrication techniques. This work introduces a compact microring modulator designed for dense system integration, supporting high-speed, energy-efficient data modulation and positioning it as a promising solution for sustainable AI gigafactories. Full article

The growing demand for portable and wireless electronic devices, along with the necessity to reduce reliance on non-renewable energy sources, has driven the need for energy harvesting materials. Nanocomposites, combining a polymeric matrix and a high-performance dielectric ceramic phase, are a promising solution. In such systems, the design of a hybrid matrix–filler interface is critical for achieving desired properties. Here, nanocomposites (NCs) were prepared by adding various amounts of hydrothermally synthesized BaTiO₃ (BT) nanoparticles (NPs) to polydimethysiloxane (PDMS). To investigate hybrid interfaces, NPs were used either bare or surface-functionalized with two silanes, 3-glycidyloxypropyltrimethoxysilane (GPTMS) or 2-[acetoxy(polyethyleneoxy)propyl]triethoxysilane (APEOPTES). NC films (80–100 μm thick) were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), and thermogravimetric analysis (TGA). Dielectric properties and breakdown strength (E_BD) were measured, and the theoretical volumetric energy density was calculated as a function of the filler loading and functionalization. The results demonstrate that hybrid interface design is pivotal for enhancing dielectric performance in NCs. APEOPTES-functionalized NPs significantly improved the dielectric response at a low filler loading (3.5%vol.), increasing permittivity from 2.8 to 7.5, E_BD from 33.8 to 42.1 kV/mm and energy density from 30 to >100 mJ/cm³. These findings underscore that designing hybrid interfaces through NP functionalization provides an effective strategy to achieve superior dielectric performance in PDMS-based NCs, retaining the advantages of the elastomeric matrix by reducing the amount of ceramic fillers. Full article

In order to solve the dynamic analysis and interactive imaging control problems in the deformation process of bionic soft lenses, dielectric elastomer (DE) actuators are separated from a convex lens, and data-driven eye-controlled motion technology is investigated. According to the DE properties, which are consistent with the deformation characteristics of hydrogel electrodes, the motion and deformation effect of eye-controlled lenses under film prestretching, lens size, and driving voltage, is studied. The results show that when the driving voltage increases to 7.8 kV, the focal length of the lens, whose prestretching λ is 4, and the diameter d is 1 cm, varies in the range of 49.7 mm and 112.5 mm. And the maximum focal-length change could reach 58.9%. In the process of eye controlling design and experimental verification, a high DC voltage supply was programmed, and eye movement signals for controlling the lens were analyzed by MATLAB software (R2023b). Eye-controlled interactive real-time motion and tunable imaging of the lens were realized. The response efficiency of soft lenses could reach over 93%. The adaptive lens system developed in this research has the potential to be applied to medical rehabilitation, exploration, augmented reality (AR), and virtual reality (VR) in the future. Full article

With the widespread diffusion of personal Internet of Things (IoT) devices, Electromagnetic Side-Channel Attacks (EM-SCAs), which exploit electromagnetic emissions to uncover critical data such as cryptographic keys, are becoming extremely common. Existing shielding approaches typically rely on bulky or opaque materials, which limit integration in modern IoT environments; this motivates the need for a transparent, lightweight, and easily integrable solution. Thus, to address this threat, we propose the use of electromagnetic metasurfaces with shielding capabilities, fabricated with an optically transparent conductive film. This film can be easily integrated into glass substrates, offering a novel and discrete shielding solution to traditional methods, which are typically based on opaque dielectric media. The paper presents two proof-of-concept case studies for shielding against EM-SCAs. The first one investigates the design and fabrication of a passive metasurface aimed at shielding emissions from chip processors in IoT devices. The metasurface is conceived to attenuate a specific frequency range, characteristic of the considered IoT processor, with a target attenuation of 30 dB. At the same time, the metasurface ensures that signals from 4G and 5G services are not affected, thus preserving normal wireless communication functioning. Conversely, the second case study introduces an active metasurface for dynamic shielding/transmission behavior, which can be modulated through diodes according to user requirements. This active metasurface is designed to block undesired electromagnetic emissions within the 150–465 MHz frequency range, which is a common band for screen gleaning security threats. The experimental results demonstrate an attenuation of approximately 10 dB across the frequency band when the shielding mode is activated, indicating a substantial reduction in signal transmission. Both the case studies highlight the potential of transparent metasurfaces for secure and dynamic electromagnetic shielding, suggesting their discrete integration in building windows or other environmental structural elements. Full article

This study proposes design and fabrication methods for an electromagnetic metasurface absorber (MA) that absorbs electromagnetic waves using a metasticker attached on a dielectric substrate blocked by a copper sheet. To guarantee a high design freedom as well as make the absorption bandwidth (BW) as broad as possible, a square-fractal ring is chosen as the metapattern, and its design is optimized using a genetic algorithm. To fabricate the square-fractal rings in a simple manner, an indium-tin-oxide film is cut by using a laser-cutting machine. Then, the metasticker is fabricated by assembling the metapatterns on a double-sided adhesive film which could be attached on the dielectric substrate using the opposite side of the film. From measured results of the finalized MA of which damaged regions caused by the laser-cutting process are compensated in the design process, a broad $-10$ dB reflectance BW is confirmed from 4.39 to 7.51 GHz of which the fractional BW is 52.44% for the normal incidence. Moreover, a fractional BW of 4.35% is measured in a wide incident angle range from $0°$ to $60°$ for both the transverse electric and the transverse magnetic polarizations simultaneously. Full article

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have emerged as promising candidates for next-generation large-area and low-power electronics due to their high mobility, low leakage current, and compatibility with low-temperature fabrication on flexible or transparent substrates. In this work, we report the fabrication of bottom-gate a-IGZO NMOS TFTs using HfO₂ as high-k gate dielectric and Mo top contacts. The devices were electrically characterized through capacitance–voltage (C–V) and current–voltage (I–V) measurements, from which key parameters were extracted. Based on these transistors, we designed, fabricated, and characterized inverters employing four different load configurations: resistive, diode, depletion, and pseudo-CMOS. A comparative analysis was performed in terms of voltage transfer characteristics (VTCs), gain, and noise margins, highlighting that depletion-load inverters offer the highest gain and robust noise margins. Finally, a two-channel multiplexer was designed and fabricated. The multiplexer was characterized under both square and sinusoidal input signals up to 1 kHz, demonstrating correct channel selection and robust switching behavior. These results confirm the potential of a-IGZO TFT-based circuits as building blocks for low-power and high-reliability digital and mixed-signal electronics. Full article

Yttrium oxide (Y₂O₃) has emerged as a key material for advanced solar-blind ultraviolet (SBUV) photodetectors, attributable to its large bandgap energy (~5.5 eV), high dielectric constant, excellent silicon compatibility, and robust thermal stability. To precisely tune its optical bandgap for optimal alignment with the intrinsic solar-blind region, this study prepared Y_1.5In_0.5O₃ ternary alloy films via co-sputtering, achieving an optimized bandgap of 4.70 eV. After optimizing the photosensitive layer, we fabricated a self-powered Pt/Y_1.5In_0.5O₃/p-GaN back-to-back heterojunction SBUV photodetector was fabricated based on the optimized photosensitive layer. Under photovoltaic operation (0 V), the resulting device exhibited impressive performance metrics: a narrow spectral response (FWHM ~50 nm), quick rise/decay times of 30 and 75 ms, respectively, and high operational durability (less than 0.8% photocurrent degradation over 100 cycles). The detector also maintained a low noise current level (2.95 × 10⁻¹² A/Hz^1/2 at 1 Hz) and a low noise-equivalent power (NEP) of 4.42 × 10⁻⁹ W/Hz^1/2, indicating high sensitivity to weak optical signals. These results establish Y_xIn_2−xO₃ ternary alloy as a viable material platform for SBUV detection and provide a new design strategy for developing highly sensitive, low-noise and spectrally selective ultraviolet photodetectors. Full article

This review summarizes the use of Auger Electron Spectroscopy (AES) for microchemical analysis of two different types of dielectric/(Al,Ga)N-based systems: (i) extrinsic dielectric PECVD SiO₂, ALD Al₂O₃, and ECR-CVD SiN_x films on Al_xGa_1−xN/GaN structures in the context of their application in microelectronic power devices and (ii) intrinsic Al₂O₃ films on AlN epitaxial layers grown by high-temperature oxidation for nanostructured technology of various gas/ion sensors. Particular attention is given to AES depth profiling across complete multilayer cross-sections, combining qualitative analysis of spectral line shape and intensity evolution as well as kinetic energy shifts with quantitative elemental depth distributions. This approach enables identification of chemical states and oxidation-related transformations at dielectric/semiconductor interfaces. Reported results demonstrate that AES provides micro- to nanometer-scale chemical information essential for distinguishing interfacial from the bulk properties. The capabilities and inherent limitations of AES depth profiling, including sputter-induced artifacts are also addressed, highlighting the role of optimized experimental conditions in reliable interface analysis. Full article

Two types of devices capable of switchable infrared spectral control are demonstrated by utilizing the phase-change characteristics of In₃SbTe₂ (Indium–Antimony–Tellurium, IST), which transitions from a low-loss dielectric amorphous phase to a high-loss metallic crystalline state. Through comprehensive structural design, theoretical calculation, simulation analysis, experimental measurement, and application demonstration, we realize distinct switching effects and functions of these two devices. In the first design, IST mono-layer thin films integrated with infrared-transparent substrates (KBr and ZnSe) enable switching between amorphous high transmittance and crystalline high reflectance states over the 2.5–15 μm range, suitable for infrared optical switches and stealth applications. In the second design, introducing a Si metasurface disk array atop the IST mono-layer thin film enables switching between broadband infrared transparency and narrowband high emissivity. This configuration allows independent spectral control of the infrared spectra within the non-atmospheric (5–8 μm) and atmospheric (8–14 μm) windows, providing a versatile platform for tunable thermal radiation management and adaptive infrared camouflage. Full article

The present work systematically investigates the impact of multilayer architecture—specifically 5, 10, and 15 layers—on the structural, morphological, optical, and dielectric properties of zinc oxide (ZnO) thin films, aiming to tailor their characteristics for optoelectronic applications. The films were characterized using a comprehensive suite of techniques. X-ray diffraction (XRD) analysis of the 15-layer sample confirmed the formation of polycrystalline ZnO with a hexagonal wurtzite crystal structure, showing prominent (100), (002), and (101) diffraction peaks. Measurements indicated that the film thickness progressively increased from 43.81 nm for 5 layers to 80.68 nm for 15 layers. Concurrently, the surface roughness significantly decreased from 5.54 nm (5 layers) to 2.00 nm (15 layers) with increasing layer count, suggesting enhanced film quality and densification. Optical studies using ultraviolet–visible (UV-Vis) spectroscopy revealed an increase in absorbance and a corresponding decrease in transmittance in the UV-Vis spectrum as the film thickness increased. The calculated optical band gap showed a slight redshift, decreasing from 3.26 eV for the 5-layer film to 3.23 eV for the 15-layer film. Photoluminescence (PL) spectra exhibited characteristic near-band-edge UV emission, with the 5-layer film demonstrating the highest PL intensity. Furthermore, analysis of optical constants revealed that the refractive index, extinction coefficient, optical conductivity, and both the real and imaginary parts of the dielectric constant generally increased with an increasing number of layers, particularly in the visible region, while more nuanced and non-monotonic trends were observed in the UV range. These results underscore the significant influence of layer number on the physical properties of ZnO thin films, providing valuable insights for optimizing their performance in various optoelectronic devices. Full article

In this work, the results of ellipsometric studies of bilayer films of broadband oxides (Al₂O₃:ZnO, Al₂O₃:TiO₂) are presented. Thin layers of ${\mathrm{A}\mathrm{l}}_2{\mathrm{O}}_3,\mathrm{Z}\mathrm{n}\mathrm{O}$ and $\mathrm{T}\mathrm{i}{\mathrm{O}}_2$ were deposited on silicon substrate using the atomic layer deposition (ALD) method. The desired ranges of antireflective properties were selected, and then, based on optical modeling, the appropriate thicknesses of individual layers were determined. Optical constants were determined based on ellipsometric measurements in the spectral range of 193–1690 nm. For several selected samples, this range has been extended to 470–6500 cm⁻¹. B-spline function, Tauc–Lorentz, Cody–Lorentz and Psemi-M0 oscillator models were used to describe the optical properties of the investigated films. Reflectance spectra for layers on a silicon substrate were determined in the range from 200 to 2500 nm. Additionally, complementary studies, SEM and EDS analyses, were also performed. The EDS investigations enabled the determination of the composition of the bilayer films. Spectrophotometric analysis demonstrated consistency between the obtained experimental data and theoretical predictions, confirming the validity of the applied model. The studies showed significant improvement in antireflective properties depending on the thickness of the prepared layers while maintaining an extinction coefficient close to zero, across much of the investigated spectral range, regardless of the layer thickness. Full article

To meet the requirement of thermal management of modern electronic devices, polymer composites with high thermal conductivity (TC) and dielectric performance are nowadays in urgent demand. Herein, a highly ordered continuous network of boron nitride nano-sheet (BNNS) was constructed in cyclic olefin polymer (COP) films via the forced flow processing in the rubbery state (FFRS), melt-spinning, fiber-alignment, and hot-pressing procedures. The composites exhibited superior TC, low dielectric permittivity, and low dielectric loss simultaneously. The in-plane TC of the composites reached 3.92 W/(mK) when the content of BNNS was at 27 weight percentage (27 wt%), since the procedures improved the face-to-face contact between the BNNS (which was exfoliated, dispersed, and in-plane oriented during FFRS), enhancing the continuity of the BNNS thermally conductive network. Both the TC and the experimental results indicated the outstanding heat dissipation performance of the composites. Meanwhile, the dielectric permittivity and dielectric loss of the 27 wt% BNNS composites were 2.56 and 0.00085 at 10 GHz, respectively, lower than that of the COP-POE matrix. Moreover, the mechanical properties, water vapor permeability, and coefficient of thermal expansion of the composites were excellent. The composites with such highly ordered continuous networks are very promising in high-performance electronic devices. Full article

Non-thermal plasma (NTP) is a fast, reagent-free technology for dye removal, yet its performance is highly dependent on the operating conditions and on plasma–catalyst interactions. In this work, a coaxial falling-film dielectric barrier discharge (DBD) reactor was optimized for the degradation and decolorization of organic dyes, with ceria (CeO₂) employed as a catalyst. For the first time, CeO₂ prepared via a supercritical antisolvent (SAS) micronization route was tested in plasma-assisted dye decolorization and directly compared with its non-micronized counterpart. Optimization of plasma parameters revealed that oxygen feeding, an input voltage of 12 kV, a gas flow of 0.2 NL·min⁻¹, and an initial dye concentration of 20 mg·L⁻¹ resulted in the fastest decolorization kinetics. While the anionic dye Acid Yellow 36 exhibited electrostatic repulsion and negligible plasma–ceria synergy, the cationic dyes Crystal Violet and Methylene Blue showed strong adsorption on the negatively charged CeO₂ surface and pronounced plasma–catalyst synergy, with SAS-derived CeO₂ consistently outperforming the non-micronized powder. The SAS catalyst, characterized by a narrow particle size distribution (DLS) and spherical morphology (SEM), ensured improved dispersion and interaction with plasma-generated species, leading to significantly shorter decolorization radiation times compared to the literature benchmarks. Importantly, this enhancement translated into higher energy efficiency, with complete dye removal achieved at a lower specific energy input than both plasma-only operation and non-micronized CeO₂. Scavenger tests confirmed •OH radicals as the dominant oxidants, while O₃, O₂•⁻, and e⁻_a played secondary roles. Tests on binary dye mixtures (CV + MB) revealed synergistic decolorization under plasma-only conditions, and the CeO₂-SAS catalyst maintained high overall efficiency despite competitive adsorption effects. These findings demonstrate that SAS micronization of CeO₂ is an effective material-engineering strategy to unlock plasma–catalyst synergy and achieve rapid, energy-efficient dye abatement for practical wastewater treatment. Full article

Ferroelectricity in hafnium oxide (HfO₂)-based thin films has emerged as a scalable pathway toward CMOS-compatible non-volatile memories and logic devices. This study examines how dopant chemistry and film thickness influence the stabilization of the ferroelectric phase in ALD-grown HfO₂ thin films doped with Zr, Al, and Y. Structural, morphological, and electrical characterizations were carried out using AFM, GIXRD, P–E, in-plane I/W–E, and C–V measurements on films with thicknesses of 7 nm and 100 nm. AFM revealed atomically smooth and dense surfaces (R_q < 0.5 nm), while GIXRD confirmed the stabilization of the orthorhombic Pca2₁ phase in doped 7 nm films and its relaxation toward the monoclinic phase at 100 nm. The 7 nm HfZrO and HfYO films exhibited robust ferroelectric hysteresis with remanent polarization values up to 60 μC·cm⁻², whereas HfAlO showed a narrower but still distinct switching response. In-plane I/W–E characteristics indicated a combination of Poole–Frenkel and injection-limited conduction, consistent with defect-assisted polarization reversal and asymmetric contact barriers. At 100 nm, all films showed reduced polarization and partially dielectric behavior, as corroborated by the C–V data. These results demonstrate that nanoscale confinement, dopant-induced strain, and oxygen vacancy related defect chemistry collectively stabilize the orthorhombic ferroelectric phase, with Zr doping providing the most favorable balance between polarization strength and leakage control. Full article

In this work, Ba_0.6Sr_0.4TiO₃ (BST) films were deposited on Si(100) and Pt(111)/Ti/SiO₂/Si(100) substrates using the pulsed laser deposition (PLD) technique. The effects of TiO₂ buffer layer thickness and preparation temperature on the microstructure and electrical properties of BST films were studied in detail. We intensively investigated the influence of the TiO₂ buffer layer on the microstructure of BST films by using X-ray diffraction and scanning electron microscopy. We found that anatase crystalline TiO₂ buffer layers within 15 nm thicknesses could significantly change the BST films from an irregular orientation to the (111) preferential orientation. The TiO₂ anatase layers could promote the growth of BST film grains for obtaining minimal stress and low lattice distortion, increase the nucleation density, and improve its surface morphology, resulting in higher dielectric constant and resistance voltage, and lower dielectric loss and leakage current density. The dielectric constant, dielectric loss, and dielectric tunability of the BST devices with 8 nm thick TiO₂ anatase buffer layers at 1 MHz were 856.5, 0.017, and 64.3%, respectively. The achieved high dielectric tunability indicates BST with TiO₂ anatase buffer layers as one of the encouraging candidates for RF and microwave tunable applications at room temperature. Full article