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Nanomaterials
Volume 15
Issue 23
10.3390/nano15231797
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Higher than 60% Dielectric Tunability in Ba0.6Sr0.4TiO3 Films Using TiO2 Anatase Buffer Layers

by
Pengzhan Zhang
1,2,*,
Jiaming He
1,
Xinyu Liu
1,
Leng Zhang
1,2,
Ling Zhang
1,
Danbei Wang
1,
Kongpin Wu
1 and
Sake Wang
1
1
Jiangsu Engineering Research Center for Digital Intelligent Testing of Integrated Circuits, Jinling Institute of Technology, College of Electronic and Information Engineering, Nanjing 211169, China
2
Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2025, 15(23), 1797; https://doi.org/10.3390/nano15231797 (registering DOI)
Submission received: 17 October 2025 / Revised: 26 November 2025 / Accepted: 26 November 2025 / Published: 28 November 2025
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
Versions Notes

Abstract

In this work, Ba0.6Sr0.4TiO3 (BST) films were deposited on Si(100) and Pt(111)/Ti/SiO2/Si(100) substrates using the pulsed laser deposition (PLD) technique. The effects of TiO2 buffer layer thickness and preparation temperature on the microstructure and electrical properties of BST films were studied in detail. We intensively investigated the influence of the TiO2 buffer layer on the microstructure of BST films by using X-ray diffraction and scanning electron microscopy. We found that anatase crystalline TiO2 buffer layers within 15 nm thicknesses could significantly change the BST films from an irregular orientation to the (111) preferential orientation. The TiO2 anatase layers could promote the growth of BST film grains for obtaining minimal stress and low lattice distortion, increase the nucleation density, and improve its surface morphology, resulting in higher dielectric constant and resistance voltage, and lower dielectric loss and leakage current density. The dielectric constant, dielectric loss, and dielectric tunability of the BST devices with 8 nm thick TiO2 anatase buffer layers at 1 MHz were 856.5, 0.017, and 64.3%, respectively. The achieved high dielectric tunability indicates BST with TiO2 anatase buffer layers as one of the encouraging candidates for RF and microwave tunable applications at room temperature.
Keywords: Ba0.6Sr0.4TiO3; dielectric tunability; TiO2 buffer layer; pulsed laser deposition Ba0.6Sr0.4TiO3; dielectric tunability; TiO2 buffer layer; pulsed laser deposition

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MDPI and ACS Style

Zhang, P.; He, J.; Liu, X.; Zhang, L.; Zhang, L.; Wang, D.; Wu, K.; Wang, S. Higher than 60% Dielectric Tunability in Ba0.6Sr0.4TiO3 Films Using TiO2 Anatase Buffer Layers. Nanomaterials 2025, 15, 1797. https://doi.org/10.3390/nano15231797

AMA Style

Zhang P, He J, Liu X, Zhang L, Zhang L, Wang D, Wu K, Wang S. Higher than 60% Dielectric Tunability in Ba0.6Sr0.4TiO3 Films Using TiO2 Anatase Buffer Layers. Nanomaterials. 2025; 15(23):1797. https://doi.org/10.3390/nano15231797

Chicago/Turabian Style

Zhang, Pengzhan, Jiaming He, Xinyu Liu, Leng Zhang, Ling Zhang, Danbei Wang, Kongpin Wu, and Sake Wang. 2025. "Higher than 60% Dielectric Tunability in Ba0.6Sr0.4TiO3 Films Using TiO2 Anatase Buffer Layers" Nanomaterials 15, no. 23: 1797. https://doi.org/10.3390/nano15231797

APA Style

Zhang, P., He, J., Liu, X., Zhang, L., Zhang, L., Wang, D., Wu, K., & Wang, S. (2025). Higher than 60% Dielectric Tunability in Ba0.6Sr0.4TiO3 Films Using TiO2 Anatase Buffer Layers. Nanomaterials, 15(23), 1797. https://doi.org/10.3390/nano15231797

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