Search Results (620)

Two-dimensional (2D) semiconductors have attracted significant attention for their potential in low-power and high-performance electronic applications. Among these, bismuth oxysulfide (Bi₂O₂S) has recently emerged as a candidate owing to its wide bandgap, low effective electron mass, and environmental stability. This review summarizes the synthesis strategies and device applications of 2D Bi₂O₂S. It systematically analyzes recent advancements in synthesis methodologies, ranging from scalable solution-based synthesis to back-end-of-line compatible, low-temperature metal–organic chemical vapor deposition. Furthermore, defect engineering, particularly through oxygen-vacancy control and doping, is discussed as a strategy to modulate the electronic band structure, enhance broadband nonlinear optical properties, and accelerate the photocarrier relaxation kinetics of 2D Bi₂O₂S. These tunable characteristics have enabled 2D Bi₂O₂S to be employed in electronic and optoelectronic devices. The review, therefore, discusses recent developments in device applications of Bi₂O₂S, including field-effect transistors, broadband photodetectors, and flexible photoelectrochemical sensors. Finally, the remaining challenges, such as wafer-scale single-crystal growth and reliable p-type doping, and future research directions are discussed for integrating Bi₂O₂S into three-dimensional integrated circuits and neuromorphic computing. Full article

This paper investigates vibration suppression of finite-length cylindrical shells using linear locally resonant absorbers and nonlinear energy sinks (NESs). A theoretical model is first established for a finite-length locally resonant cylindrical shell equipped with periodically distributed linear cantilever-beam absorbers based on Flügge’s thin shell theory. By combining the modal superposition method and the harmonic balance method, analytical expressions for the vibration responses and average velocity levels of the cylindrical shell are derived. The theoretical model is validated by finite element simulations, and the locally resonant bandgap characteristics are further analyzed. Parametric studies are conducted to clarify the effects of absorber length, thickness, width, and distribution density on the bandgap position, bandgap width, and vibration attenuation performance. On this basis, nonlinear energy sinks are introduced as an additional broadband vibration suppression strategy and investigated through experiments and COMSOL transient simulations. The experimental results show that the NESs effectively suppress resonance peaks near the bandgap edges and improve broadband vibration attenuation. Furthermore, transient simulations under different excitation amplitudes demonstrate the excitation-amplitude-dependent response characteristics of the NESs, indicating enhanced nonlinear energy transfer under higher excitation levels. The results provide theoretical guidance for the design of finite-length locally resonant cylindrical shells and further verify the broadband vibration suppression capability of nonlinear energy sinks through experimental and numerical investigations. Full article

ZnS is one of the most promising wide-bandgap semiconductors for optoelectronic and sensing applications owing to its efficient ultraviolet–blue emission, high exciton binding energy, and chemical stability. However, the synthesis of ZnS nanocrystals in silicon-compatible porous matrices remains largely unexplored. In this work, ordered arrays of ZnS nanocrystals were synthesized for the first time in SiO₂/Si track templates fabricated by swift heavy ion irradiation followed by selective chemical etching. ZnS nanocrystals were deposited by electrochemical deposition from aqueous solutions containing ZnCl₂ and thiourea precursors. The structural, optical, and electrical properties of the resulting ZnS/SiO₂/Si nanocomposites were investigated using scanning electron microscopy, X-ray diffraction, Raman spectroscopy, photoluminescence spectroscopy, and electrical measurements. The fabricated templates contained vertically aligned pores with a density of approximately 10⁸ cm⁻² and an average diameter of about 500 nm. Electrochemical deposition resulted in a pore filling efficiency of approximately 88%. X-ray diffraction analysis confirmed the formation of crystalline ZnS with a cubic zinc blende structure. The nanocomposites exhibit intense ultraviolet–blue photoluminescence in the 335–477 nm range, with pronounced emission peaks at 372 and 400 nm characteristic of ZnS nanocrystals. Current–voltage measurements indicate predominantly electronic conductivity, with a conductivity of 1.54 × 10⁻⁶ Ohm⁻¹·cm⁻¹, comparable to values reported for polycrystalline ZnS films. To support the experimental observations, the electronic structure of ZnS was analyzed using density functional theory within the LCAO framework. The calculated bandgap of 3.4 eV is consistent with previously reported theoretical and experimental data. The obtained results demonstrate that SiO₂/Si track templates provide a promising platform for the fabrication of ordered ZnS nanoarrays with potential applications in silicon-compatible optoelectronic and sensing devices. Full article

CsPbI₂Br, an all-inorganic cesium–lead mixed-halide perovskite, has established itself as a leading contender for next-generation photovoltaics, owing to its near-optimal direct bandgap, exceptional thermal stability, and favorable optoelectronic characteristics. These attributes make it a versatile candidate for both high-efficiency single-junction devices and wide-bandgap top cells in tandem architectures with silicon or low-bandgap perovskites. However, the commercialization of CsPbI₂Br perovskite solar cells (PSCs) is severely hindered by inherent interfacial challenges, including halide segregation under operational stress, high density of interfacial defects, energy-level misalignment between the perovskite and charge transport layers (CTLs), and chemical incompatibility at hetero-interfaces. These factors limit power conversion efficiency (PCE) and long-term operational stability. Interface engineering has thus become the pivotal strategy to address these bottlenecks, enabling transformative improvements in device performance. This review comprehensively summarizes the state-of-the-art interface engineering strategies for CsPbI₂Br PSCs, including molecular passivation, construction of 2D/3D heterostructures, design of composite interlayers, and development of dopant-free, stable CTLs. The underlying mechanisms of defect passivation, non-radiative recombination suppression, energy-level alignment optimization, and ion migration inhibition are systematically elucidated. Furthermore, we discuss critical remaining challenges, including the trade-off between phase stability and optoelectronic quality, interfacial delamination due to thermal expansion mismatch, and scalable fabrication of interface-modified large-area devices. Finally, future research directions are proposed, emphasizing the development of multifunctional interfacial materials, all-inorganic interface architectures, in situ characterization combined with computational modeling, and integration into tandem photovoltaic systems. By consolidating current knowledge and highlighting promising frontiers, this review aims to guide the rational design of high-performance, stable, and commercially viable CsPbI₂Br PSCs, accelerating their role in the global transition toward renewable energy. Full article

Conventional 8YSZ thermal barrier ceramics suffer from limited phase stability and insufficient infrared radiation regulation at high temperatures. Sc₂O₃ doping can reduce thermal conductivity and improve phase stability, but the improvement remains limited because the fixed-valence substitution of Sc³⁺ cannot effectively increase defect concentration or regulate carrier behavior. In this work, CeO₂ with tunable valence states was incorporated into the Sc-stabilized YSZ system to realize the synergistic modulation of lattice thermal conductivity and photon thermal conductivity. A series of Sc₂O₃–CeO₂ co-doped YSZ ceramics were fabricated via solid-state sintering, and the effects of co-doping on phase structure, defect evolution, thermal conductivity, infrared emissivity, and bandgap characteristics were systematically investigated. The results show that all co-doped samples maintained a stable tetragonal fluorite structure with relative densities higher than 96%. Among them, Sc_0.08Ce_0.005Y_0.005Zr_0.91O₂ exhibited the best comprehensive performance. Its thermal conductivity at 1000 °C reached 2.073 W·m⁻¹·K⁻¹, which was 11.9% lower than that of conventional 8YSZ. Meanwhile, the average infrared emissivity in the 3–5 μm band increased to 0.779. XPS analysis indicated that Ce incorporation promoted oxygen-vacancy formation, which enhanced phonon scattering and reduced lattice thermal conductivity. In addition, co-doping narrowed the band gap and facilitated carrier excitation, thereby strengthening infrared absorption and emission behavior. The enhanced infrared emissivity further contributed to the suppression of radiative thermal transport at elevated temperatures. This work demonstrates that Sc₂O₃–CeO₂ co-doping provides an effective strategy for simultaneously regulating phonon transport and photon transport in YSZ-based ceramics. The results provide new insight into the design of advanced thermal barrier materials with low thermal conductivity and enhanced high-temperature infrared radiation performance. Full article

In this work, the structural, electronic, charge-transfer, thermal, and magnetic properties of pristine and Fe-doped silicon carbide nanosheets (SiCNShs) were systematically investigated using spin-polarized density functional theory (DFT) within the Local Spin Density Approximation including Hubbard correction (LSDA + U). A 4 × 4 SiCNSh supercell containing 80 atoms was considered, where Fe atoms were substitutionally introduced at carbon sites to evaluate dopant-induced modifications in the nanosheet. Structural optimization, energy convergence, force minimization, and stress evolution analyses confirm that Fe incorporation preserves the structural integrity of the SiCNSh and leads to energetically stable configurations. The calculated defect formation energy (−7.44 eV/atom) demonstrates the thermodynamic feasibility of Fe substitution, while ab initio molecular dynamics (AIMD) simulations at 300 K verify the thermal stability of the energetically favorable Fe-doped configuration. Electronic-structure calculations reveal that pristine SiCNSh exhibits a nonmagnetic semiconducting nature with a band gap of approximately 2.4 eV, whereas Fe incorporation significantly modifies the electronic structure through pronounced Fe–3d/C–2p/Si–3p orbital hybridization. The band gap is reduced to approximately 1.1 eV for the single-Fe-doped system and further decreases to 0.53/0.51 eV (spin-up/spin-down) in the double-Fe configuration, while preserving semiconducting behavior. Spin-polarized band structure and density of states analyses demonstrate clear spin asymmetry near the Fermi level, indicating strong dopant-induced spin polarization and exchange interactions. Charge-density difference and Bader charge analyses reveal substantial dopant-induced charge redistribution characterized by electron depletion around Fe atoms, enhanced electron accumulation on neighboring carbon atoms, and partial charge neutralization of nearby Si atoms, resulting in a more localized covalent Si–C–Fe bonding environment. Mulliken spin population analysis further demonstrates robust ferromagnetic ordering, where the Fe dopant acts as the dominant magnetic center with strong induced spin polarization extending into neighboring Si and C atoms. Comparison between ferromagnetic (FM) and antiferromagnetic (AFM) configurations confirms that the 2Fe@C-doped SiCNSh stabilizes in a ferromagnetic ground state, exhibiting a favorable FM–AFM energy difference of 0.216 eV. Based on the mean-field approximation, the Curie temperature was estimated to be approximately 837 K, indicating strong magnetic stability significantly above room temperature. The present findings collectively demonstrate that Fe incorporation effectively tailors the electronic and magnetic properties of SiCNSh through band-gap engineering, spin-symmetry breaking, and stabilization of high-temperature ferromagnetism. These combined characteristics establish Fe-doped SiCNShs as promising candidates for spintronic devices, magnetic semiconductors, spin injectors, spin filters, and non-volatile magnetic memory applications. Full article

Train-induced vibrations pose a significant threat to foundation pit slopes adjacent to railways during parallel construction or line renovation projects. To address this issue, this paper proposes a periodic steel-sheet pile barrier for vibration mitigation in narrow construction sites. Firstly, field tests were conducted along the Qinbei Railway in China. The acceleration time history and dominant frequency (27.6 Hz) of ground vibrations were obtained. Secondly, based on periodic structure theory, the dispersion relations and band-gap characteristics of periodic steel-sheet piles were analyzed using the finite element method. Parametric studies were then performed to investigate the effects of key factors, including periodic constants, pile spacing and pile count per unit cell, and construction deviations, on the band-gap boundaries and width. Subsequently, frequency-domain, time-domain, and slope stability analyses were carried out to evaluate the isolation performance. The results show that the optimized barrier, with parameters of a = 1.6 m, D = 0.1 m, n₁ = n₂ = 4, and L = 2S, reduced the peak acceleration by 70% and achieved a vibration reduction of up to 88% at the dominant frequency. Furthermore, slope stability analysis revealed that the barrier increased the factor of safety from 1.16 to 1.46, exceeding the code-required minimum of 1.2–1.3. This study provides a potentially cost-effective and construction-friendly solution for protecting temporary foundation pit slopes from train-induced vibrations in railway-adjacent areas. Full article

Ceramics, as a handicraft, is the crystallization of art and science. In order to study the firing process of ceramics, improve their density, mechanical properties, viscosity, and surface tension, and enhance the surface quality of the shaft, this article uses first-principles methods to study the electronic properties of ceramic colorants Al₂O₃, Fe₂O₃, TiO₂, CaO, MgO, Na₂O, KO₂, and ceramic body SiO₂. Research has shown that these seven color-developing agents exhibit anisotropy and have stable crystal structures. The bandgap values of Al₂O₃, CaO, Fe₂O₃, KO₂, MgO, Na₂O, TiO₂, and ceramic SiO₂ are 6.325 eV, 3.654 eV, 0 eV, 0 eV, 4.731 eV, 1.972 eV, 2.18 eV and 6.002 eV, respectively. In Al₂O₃/SiO₂, Fe₂O₃/SiO₂, TiO₂/SiO₂, CaO/SiO₂, MgO/SiO₂, Na₂O/SiO₂, and KO₂/SiO₂ systems, due to the influence of the potential field in the SiO₂ system, the charge characteristics exhibit obvious interfacial and non-periodic characteristics. The research results revealed the charge transfer and distribution patterns at the interface between ceramic colorants and ceramic ligands, elucidating the influence mechanism of different colorants/embryo components on firing temperature, shrinkage rate, and finished product defects. This mechanism can be used to predict the advantages and disadvantages of alkali metals, iron, titanium, and aluminum components in raw materials, optimize low-temperature rapid firing formulas, suppress firing deformation, control pore defects, and improve the mechanical properties of finished products. It provides micro theoretical support for the industrialization, stabilization, and high-quality production of local ceramics in southwestern China. Full article

GaAs_1-xN_x/GaAs (001) (0 < x ≤ 0.037) tensile-strained epilayers are of considerable importance in optoelectronics due to their ability to offer large and resilient band structure engineering. Strain causes valence-band splitting, giant bandgap reduction and phonon frequency shifts. Optimum performance of III-V-Ns in long-wavelength lasers, infrared photodetectors, optical modulators, and multi-junction solar cells is contingent on their distinctive vibrational and optical characteristics. We report results of meticulous simulations of GaAs_1-xN_x alloys to validate Fourier transform infrared (FTIR) reflectivity and spectroscopic ellipsometry (SE) data in the far-infrared and ultraviolet regions. The FTIR spectra showed strong reflectivity peaks and dips in the reststrahlen band region, linked to the transverse optical ${\omega }_{\mathrm{T}\mathrm{O}1}$ and longitudinal optical ${\omega }_{\mathrm{L}\mathrm{O}1}$ modes of the Ga-As bond and a high-frequency ${\omega }_{\mathrm{T}\mathrm{O}2}$ local vibrational mode of GaAs:N. Modified dielectric functions of GaAs_1-xN_x/GaAs epilayers are carefully evaluated using an improved Adachi’s semiemperical method to study the x and E-dependent optical constants. Focusing on the electronic band structures at critical points, this approach provided accurate analytical formulation to evaluate complex dielectric $\tilde{\epsilon }$(E) and refractive indices $\tilde{\mathrm{n}}$(E) for simulating reflectance spectra in a wide energy range with good agreement to the SE data. Full article

Trimethylamine (TMA), a characteristic volatile biogenic amine generated during aquatic product spoilage, has a concentration that quantitatively reflects product freshness. Therefore, developing a rapid and accurate method for TMA detection is important for food safety control. Herein, this study synthesized high-performance hollow SnO₂ nanospheres via a hydrothermal method, aiming to develop a rapid, non-destructive gas sensor for TMA detection and evaluate its feasibility for assessing aquatic product freshness. The material exhibited a high response (Ra/Rg = 10.5@100 ppm), rapid response-recovery kinetics (10 s/20 s), and good selectivity. These properties were attributed to the high specific surface area, efficient gas diffusion channels, and abundant active sites provided by the hollow structure, which enhances the sensor’s response rate. Ultraviolet–visible diffuse reflectance spectroscopy further showed that the hollow structure narrows the bandgap of SnO₂, which may facilitate electron transfer and contribute to the enhanced response to TMA. In practical applications, a MEMS sensor based on SnO₂ hollow nanospheres successfully detected TMA concentration changes from sea bass during 0–8 days of refrigerated storage, demonstrating its potential reliability for rapid freshness assessment of aquatic products and providing a technological route for quality evaluation. Full article

The increasing global demand for renewable energy has intensified the search for high-efficiency and cost-effective solar cell technologies. Quantum dot-sensitized solar cells (QDSSCs) have emerged as promising candidates due to their tunable optoelectronic properties and enhanced light absorption. In this study, SnS quantum dots were synthesized from dithiocarbamate complexes using different ligands, namely m-toluidine (SnS1), aniline (SnS2), and p-toluidine (SnS3), to investigate the influence of precursor chemistry on material properties and device performance. Structural analysis confirmed the formation of an orthorhombic phase for all samples, while morphological studies revealed well-dispersed nanocrystals for SnS1 (5.93 nm), increased aggregation for SnS2 (8.57 nm), and partially fused domains with an intermediate size for SnS3 (6.67 nm). Optical measurements showed bandgap energies of 2.8, 2.2, and 2.7 eV for SnS1, SnS2, and SnS3, respectively, with SnS3 exhibiting reduced charge-recombination behaviour. Photovoltaic devices fabricated using these materials yielded power conversion efficiencies of 3.40, 2.03, and 7.63% for SnS1, SnS2, and SnS3, respectively, with no significant improvement observed for bifacial configurations. The superior performance of SnS3 is attributed to an optimal balance between light absorption, morphology, and charge transport properties, highlighting the critical role of precursor ligand selection in tuning quantum dot characteristics for improved QDSSC performance. Full article

Wind turbines are persistently threatened by both lightning overvoltage and switching overvoltage due to their ultra-high structure, dense power electronics, and harsh operational environments, which severely endanger the safe and stable operation of the units. This paper systematically reviews the generation mechanism, type characteristics, and hazards of overvoltages in wind turbines. An internal and collaborative overvoltage protection system based on lightning protection zones (LPZs) is described. Focusing on three core protective devices—metal oxide varistors (MOVs), gas discharge tubes (GDTs), and Transient Voltage Suppressors (TVSs)—the research progress in material modification, structural optimisation, and performance evolution laws is explored. Additionally, the development of series-parallel topological collaborative design for multiple devices and active-triggered intelligent protection technologies is analysed. It is highlighted that current wind turbine overvoltage protection still faces bottlenecks in standard applicability, device operating condition adaptability, and system-level collaborative design. Future research should focus on the application of a wide bandgap and nanomaterials, the improvement of test standards tailored for actual operating conditions, and the construction of multi-physics coupling simulation and active intelligent early warning protection systems, so as to provide theoretical and technical support for high-reliability overvoltage protection of large-capacity and offshore wind turbines. Full article

Thermal transient testing (TTT) is an essential technique for characterizing electronic systems, including packaged devices, modules, and subassemblies. These tests serve two closely related purposes: first, they enable determination of peak operating temperatures under various power conditions; on the other hand, they allow extraction of partial thermal resistances within the tested structure and identification of structural details near the active devices. The latter objective has become increasingly challenging with the advent of wide bandgap devices featuring extremely low on-state resistance, such as GaN HEMTs. This paper first identifies the temperature-sensitive electrical parameters and heater structures relevant for TTT of semiconductor devices. It then narrows the focus on GaN power devices and analyzes how external series resistances, originating from HEMT packages and the associated printed circuit boards, affect thermal impedances and structure functions. To remove the influence of these external resistances, which distort the extracted thermal descriptors, an analytical correction methodology has been developed. The proposed approach is validated through measurements performed on real devices. The results demonstrate that the method successfully restores the intrinsic thermal properties of the devices, yielding more accurate and physically meaningful thermal characteristics. Full article

Two-dimensional transition metal carbides and nitrides, known collectively as MXenes, are attractive photocatalyst candidates because their surface chemistry and atomic composition can be tuned over a wide compositional window. A crucial design quantity is the electronic bandgap, which selects whether a given MXene couples with solar radiation and aligns with the redox levels of water splitting. High-fidelity bandgap calculations using the PBE0 hybrid functional are computationally expensive, which has motivated several machine learning surrogates. To the best of our knowledge, this is the first study to integrate a continuous-depth Neural Ordinary Differential Equation backbone with multi-fidelity $\Delta$ learning, distribution-free split-conformal calibration, and uncertainty-aware Pareto screening into a single mathematically grounded pipeline for MXene bandgap prediction. In this work, we develop a physics-constrained neural ordinary differential equation (PC-NODE) that predicts MXene bandgaps from a compact 34-dimensional descriptor set, without relying on the density of states. The model couples a classifier head for the metal/semiconductor decision with a regression head for the gap magnitude, and enforces three physically motivated properties: non-negativity of the predicted gap and monotonicity between the low-fidelity Perdew–Burke–Ernzerhof (PBE) and the high-fidelity PBE0 estimates are obtained exactly through a softplus-parameterised $\Delta$ learning construction, while a hurdle coupling that drives metal predictions towards zero is enforced via a quadratic penalty and verified empirically. In short, two of the three physical constraints are guaranteed by construction, and the third is approximately enforced and verified empirically; the same distinction is maintained consistently in the methodology, the constraint audit and the conclusion. Trained on the 4356-structure MXgap database, a ten-seed ensemble reaches a mean absolute error of $0.186$ eV (per-seed $0.206\pm 0.006$ eV) and a coefficient of determination $R^2=0.880$ on the semiconductor test subset, with a classifier accuracy of $0.856$ and a Receiver Operating Characteristic Area Under the Curve (ROC-AUC) of $0.925$. A split-conformal calibration step then delivers prediction intervals whose empirical coverage matches the 90% target within 0.5 percentage points. Finally, an uncertainty-aware Pareto screening step applies the trained surrogate to a held-out subset of 396 lanthanum-based MXenes and identifies 74 candidates inside the photocatalytic water splitting window [1.23, 3.10] eV. The framework offers a mathematically grounded, data-efficient alternative to feature-heavy pipelines and is reproducible from the open MXgap resource. Full article

This paper proposes an experimental methodology for the systematic determination of the equivalent circuit parameters of three winding high frequency transformers (3W-HFTs) for modeling the electrical behavior and the power losses of triple active bridge (TAB) power converters intended for onboard electric vehicle charging applications. For modeling the 3W-HFTs, a comprehensive lumped element equivalent circuit is adopted, and its electrical and electromagnetic parameters are determined through a structured sequence of open-circuit and short-circuit measurements performed over a wide frequency range from 20 Hz to 13 MHz using a precision impedance analyzer to thoroughly investigate impedance resonance behavior, while wide-bandgap power electronic devices are employed. The comparison between the lumped element impedance model and the measured impedance responses demonstrates strong agreement in terms of both magnitude and phase across the frequency range under study. Furthermore, the comparison of simulation results and experimental measurements performed on a TAB prototype under both open-circuit and load operating conditions validates the 3W-HFT electrical characteristics and the estimation of TAB’s power losses distribution. The close consistency between experimental results and simulation outcomes confirms the effectiveness of the proposed characterization approach. Full article