Search Results (10)

This study presents a simulation-based design of a silicon single-photon avalanche diode (SPAD) optimized for picosecond-resolved photon detection. Utilizing COMSOL Multiphysics, we implement a dead-space-aware impact ionization model to accurately capture history-dependent avalanche behavior. A guard ring structure and tailored doping profiles are introduced to improve electric field confinement and suppress edge breakdown. Simulation results show that the optimized device achieves a peak electric field of 7 × 10⁷ V/m, a stable gain slope of −0.414, and consistent avalanche triggering across bias voltages. Transient analysis further confirms sub-20 ps response time under −6.5 V bias, validated by a full-width at half-maximum (FWHM) of ~17.8 ps. Compared to conventional structures without guard rings, the proposed design exhibits enhanced breakdown localization, reduced gain sensitivity, and improved timing response. These results highlight the potential of the proposed SPAD for integration into next-generation quantum imaging, time-of-flight LiDAR, and high-speed optical communication systems. Full article

This study presents a hybrid adaptive control strategy that integrates genetic algorithm (GA) optimization with an adaptive neuro-fuzzy inference system (ANFIS) for precise thermal regulation of single-photon avalanche diodes (SPADs). To address the nonlinear and disturbance-sensitive dynamics of SPAD systems, a performance-oriented dataset is constructed through multi-scenario simulations using settling time, overshoot, and steady-state error as fitness metrics. The genetic algorithm (GA) facilitates broad exploration of the proportional–integral–derivative (PID) controller parameter space while ensuring control stability by discarding low-performing gain combinations. The resulting high-quality dataset is used to train the ANFIS model, enabling real-time, adaptive tuning of PID gains. Simulation results demonstrate that the proposed GA-ANFIS-PID controller significantly enhances dynamic response, robustness, and adaptability over both the conventional Ziegler–Nichols PID and GA-only PID schemes. The controller maintains stability under structural perturbations and abrupt thermal disturbances without the need for offline retuning, owing to the real-time inference capabilities of the ANFIS model. By combining global evolutionary optimization with intelligent online adaptation, this approach improves both accuracy and generalization, offering a practical and scalable solution for SPAD thermal management in demanding environments such as quantum communication, sensing, and single-photon detection platforms. Full article

This paper presents a low-noise CMOS transimpedance-limiting amplifier (CTLA) for application in LiDAR sensor systems. The proposed CTLA employs a dual-feedback architecture that combines the passive and active feedback mechanisms simultaneously, thereby enabling automatic limiting operations for input photocurrents exceeding 100 µA_pp (up to 1.06 mA_pp) without introducing signal distortions. This design methodology can eliminate the need for a power-hungry multi-stage limiting amplifier, hence significantly improving the power efficiency of LiDAR sensors. The practical implementation for this purpose is to insert a simple NMOS switch between the on-chip avalanche photodiode (APD) and the active feedback amplifier, which then can provide automatic on/off switching in response to variations of the input currents. In particular, the feedback resistor in the active feedback path should be carefully optimized to guarantee the circuit’s robustness and stability. To validate its practicality, the proposed CTLA chips were fabricated in a 180 nm CMOS process, demonstrating a transimpedance gain of 88.8 dBΩ, a −3 dB bandwidth of 629 MHz, a noise current spectral density of 2.31 pA/√Hz, an input dynamic range of 56.6 dB, and a power dissipation of 23.6 mW from a single 1.8 V supply. The chip core was realized within a compact area of 180 × 50 µm². The proposed CTLA shows a potential solution that is well-suited for power-efficient LiDAR sensor systems in real-world scenarios. Full article

The development and calibration of a measurement system designed for assessing the performance of the avalanche photodiodes (APDs) used in the Compton scattering polarimeter of the CUSP project is discussed in this work. The designed system is able to characterize the APD gain $G_{APD}$ and energy resolution across a wide range of temperatures T (from −20 °C to +60 °C) and bias voltages $V_{bias}$ (from 260 V to 410 V). The primary goal was to experimentally determine the $G_{APD}$ dependence on the T and $V_{bias}$ in order to establish a strategy for stabilizing $G_{APD}$ by compensating for T fluctuations, acting on $V_{bias}$. The results demonstrate the system capability to accurately characterize APD behavior and develop feedback mechanisms to ensure its stable operation. This work provides a robust framework for calibrating APDs for space environments. It is essential for the successful implementation of spaceborne polarimeters such as the Compton scattering polarimeter foreseen aboard the CUbeSat Solar Polarimeter (CUSP) mission under development to perform solar flare X-ray polarimetry. Full article

The nonlinear characteristics of avalanche photodiodes (APDs) inhibit their performance in high-speed communication systems, thereby limiting their widespread application as optical detectors. Existing theoretical models have not fully elucidated complex phenomena encountered in actual device structures. In this study, actual APD structures exhibiting lower linearity than their ideal counterparts were revealed. Simulation analysis and physical inference based on GaN APDs reveal that electrode size is a noteworthy factor influencing response linearity. This discovery expands the nonlinear theory of APDs, suggesting that APD linearity can be enhanced by suppressing the electrode size effect. A physical model was developed to explain this phenomenon, which is attributed to charge accumulation at the edge of the contact layer. Therefore, we proposed an improved APD design that incorporates an additional gap layer and a buffer layer to stabilize the internal gain under high-current-density conditions, thereby enhancing linearity. Our improved APD design increases the linear threshold for optical input power by 4.46 times. This study not only refines the theoretical model for APD linearity but also opens new pathways for improving the linearity of high-speed optoelectronic detectors. Full article

Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing industrial needs pose challenges for the fabrication cycle time and fabrication cost. In this work, we proposed an improved fabrication process for ultra-deep mesa-structured silicon APDs for photodetection in the visible and near-infrared wavelengths with improved performance and reduced costs. The improved process reduced the complexity through significantly reduced photolithography steps, e.g., half of the steps of the existing process. Additionally, single ion implantation was performed under low energy (lower than 30 keV) to further reduce the fabrication costs. Based on the improved ultra-concise process, a deep-mesa silicon APD with a 140 V breakdown voltage was obtained. The device exhibited a low capacitance of 500 fF, the measured rise time was 2.7 ns, and the reverse bias voltage was 55 V. Moreover, a high responsivity of 103 A/W@870 nm at 120 V was achieved, as well as a low dark current of 1 nA at punch-through voltage and a maximum gain exceeding 1000. Full article

Single-pixel imaging lidar is a novel technology that leverages single-pixel detectors without spatial resolution and spatial light modulators to capture images by reconstruction. This technique has potential imaging capability in non-visible wavelengths compared with surface array detectors. An avalanche photodiode (APD) is a device in which the internal photoelectric effect and the avalanche multiplication effect are exploited to detect and amplify optical signals. An encapsulated APD detector, with an APD device as the core, is the preferred photodetector for lidar due to its high quantum efficiency in the near-infrared waveband. However, research into APD detectors in China is still in the exploratory period, when most of the work focuses on theoretical analysis and experimental verification. This is a far cry from foreign research levels in key technologies, and the required near-infrared APD detectors with high sensitivity and low noise have to be imported at a high price. In this present study, an encapsulated APD detector was designed in a linear mode by integrating a bare APD tube, a bias power circuit, a temperature control circuit and a signal processing circuit, and the corresponding theoretical analysis, circuit design, circuit simulation and experimental tests were carried out. Then, the APD detector was applied in the single-pixel imaging lidar system. The study showed that the bias power circuit could provide the APD with an operating voltage of DC 1.6 V to 300 V and a ripple voltage of less than 4.2 mV. Not only that, the temperature control circuit quickly changed the operating state of the Thermo Electric Cooler (TEC) to stabilize the ambient temperature of the APD and maintain it at 25 ± 0.3 °C within 5 h. The signal processing circuit was designed with a multi-stage amplification cascade structure, effectively raising the gain of signal amplification. By comparison, the trial also suggested that the encapsulated APD detector and the commercial Licel detector had a good agreement on the scattered signal, such as a repetition rate and pulse width response under the same lidar environment. Therefore, target objects in real atmospheric environments could be imaged by applying the encapsulated APD detector to the near-infrared single-pixel imaging lidar system. Full article

Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra doped p-layer below the n-p junction which provides signal amplification. The moderate gain of these sensors, together with the relatively thin active region, provides excellent timing performance for Minimum Ionizing Particles (MIPs). To mitigate the effect of pile-up during the High-Luminosity Large Hadron Collider (HL-LHC) era, both ATLAS and CMS experiments will install new detectors, the High-Granularity Timing Detector (HGTD) and the End-Cap Timing Layer (ETL), that rely on the LGAD technology. A full characterization of LGAD sensors fabricated by Centro Nacional de Microelectrónica (CNM), before and after neutron irradiation up to 10${}^{15}$ n${}_{eq}$/cm${}^2$, is presented. Sensors produced in 100 $\mathrm{m}$$\mathrm{m}$ Si-on-Si wafers and doped with boron and gallium, and also enriched with carbon, are studied. The results include their electrical characterization (I-V, C-V), bias voltage stability and performance studies with the Transient Current Technique (TCT) and a Sr-90 radioactive source setup. Full article

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain. Full article

In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI₂ and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been recently demonstrated with excellent avalanche gains; the latter is expected to lead to a number of novel imaging device applications that would be quantum noise limited. While passive pixel sensors use one TFT (thin film transistor) as a switch at the pixel, active pixel sensors (APSs) have two or more transistors and provide gain at the pixel level. The advantages of APS based x-ray imagers are also discussed with examples. Full article