Search Results (90)

The phase transitions and switching dynamics of topological polar textures in hafnium oxide (HfO₂)-based cylindrical-shell ferroelectrics are studied using a three-dimensional (3D) phase field model based on the self-consistent solution of the time-dependent Ginzburg–Landau model and Poisson equation. The comprehensive interplays of bulk free energy, gradient energy, depolarization energy, and elastic energy are taken into account. When a cylindrical ferroelectric device is biased under the in-plane radial electric field, there is a size-controlled phase transition between the ferroelectric (FE), antiferroelectric (AFE), and paraelectric (PE) phases, depending on ferroelectric film thickness and cylindrical shell radius. For in-plane polarization textures at the equilibriums, the FE phase has a Néel-like texture with a center-type four-quad domain, the AFE phase has a monodomain texture, and the PE phase has a Bloch-like texture with a vortex four-quad domain. These polarization domain textures are resultant from energy competition and topologically protected by the geometrical confinement. The polarization dynamics from polar states towards equilibriums are analyzed considering the separated contributions of x- and y-components of polarizations that are driven by x-y in-plane electric fields. The emergent topological domains and phase transitions provide guidelines for geometrical engineering of a novel nano-structured ferroelectric device that is different from the planar one, offering new possibilities for multi-functional high-density ferroelectric memory. Full article

Among the recently developed ferroelectric nematic liquid crystals, FNLC-919, synthesized by Merck Electronics KGaA, stands out for its stable, room-temperature, ferroelectric nematic (N_F) phase. This renders it a promising candidate for both fundamental research and device-level applications. In this study, we present a comprehensive experimental investigation of FNLC-919, focusing on its structural, optical, dielectric, and elastic properties in the paraelectric nematic (N) and the intermediate antiferroelectric phase (dubbed N_X) that occur in a temperature range between the N and N_F phases. Key material parameters such as ferroelectric polarization, viscosity, and nanostructure are characterized as functions of temperature in all mesophases, while the orientational elastic constants are determined only in the N and N_X phases. Our findings are compared with prior results concerning the benchmark compound DIO that also exhibits the phase sequence N-N_X-N_F and reveals a smectic-like mass density wave coinciding with antiferroelectric ordering in the N_X phase. Full article

The conventional static imprint effect in Hf_xZr_1−xO₂ (HZO) ferroelectric (FE) devices, which degrades data retention, is generally characterized by a shift in the hysteresis loop along the electric field axis. Unlike the static imprint effect, the dynamic imprint effect emerges under dynamic electric fields or actual operating conditions, making the FE film exceptionally sensitive to switching pulse parameters and domain history. In HZO anti-ferroelectric (AFE) devices, this dynamic imprint effect alters the coercive field distribution associated with domain switching and poses a significant challenge to long-term stable device operation. This study systematically investigates the dynamic imprint effect and its recovery process using a comprehensive integration of first-order reversal curve (FORC) analysis, transient current-voltage (I-V), and polarization-voltage (P-V) characterization. By analyzing localized imprint behavior under sub-cycling conditions, mechanisms and recovery pathways of imprint in AFE devices are proposed. Finally, possible physics-based mechanisms describing imprint behaviors and recovery behaviors are discussed, providing insights for optimizing AFE memory technology performance and reliability. Full article

NaNbO₃ (NN), known for the complexity of its phase transition sequence, is antiferroelectric (AFE) at room temperature, while both LiNbO₃ (LN) and KNbO₃ (KN) are ferroelectric (FE). The origin of ferroelectricity in ABO₃ perovskites is believed to lie in the B-O hybridization, but the origin of antiferroelectricity remains unclear. Recent ab initio studies have shown that the same B-O hybridization is necessary in AFE and proposed an additional, anharmonic contribution to the potential of the A-site atom as the crucial difference between FE and AFE perovskites. We used structure factors obtained from X-ray diffraction experiments in combination with the Maximum Entropy Method to obtain electron densities for LN, KN, and NN and identify differences in their bonding behavior. We present experimental evidence for anharmonic A-site contributions of varying strength in alkali niobates, pointing at a new path for the design of (anti-)ferroelectric materials. Full article

Background/Objectives: Barium titanate (BaTiO₃)-based nanocarriers have emerged as versatile and promising platforms for targeted drug delivery, owing to their unique combination of biocompatibility, piezoelectric and ferroelectric properties, as well as responsiveness to external stimuli. These multifunctional ceramic nanoparticles can be precisely engineered to enable spatiotemporally controlled release of therapeutic agents, triggered by physical stimuli such as ultrasound, light, magnetic fields, temperature changes, and pH variations. Such an approach enhances treatment efficacy while reducing systemic side effects. Methods: This review provides a comprehensive overview of the latest advancements in the development and biomedical application of BaTiO₃-based nanocarriers. Special emphasis is placed on modern synthesis strategies, surface functionalization methods, and the integration of BaTiO₃ with other functional nanomaterials to create hybrid systems with improved therapeutic performance. Key challenges in clinical translation are also discussed, including biocompatibility assessment, biodistribution, and regulatory requirements. Conclusions: BaTiO₃-based nanocarriers show promise as materials well suited for advanced biomedical applications. The paper concludes with an outline of future research directions aimed at optimizing these advanced nanosystems for precision and personalized medicine, with applications in oncology, anti-infective therapy, and regenerative medicine. Full article

Dielectric crystals with switchable electric polarizations represent the key functional materials utilized for a broad range of practical applications. They allow for academically intriguing platforms, where the use of a strong external electric field can potentially unveil hidden crystal phases. Proton–π-electron correlated bistable systems turn out to be promising for exploring such electrically induced crystal polymorphisms, mainly because strong π-electronic polarization can be sensitively switched depending on mobile hydrogen locations. Pseudo-symmetry and hydrogen disorder are utilized as clues for the data mining of the Cambridge Structural Database in the search for molecular candidates with novel switchable dielectrics. The polarization hysteresis, electrostriction, and second harmonic generation of the candidates were experimentally evaluated, together with the re-inspection of crystal structure. This feature article highlights the rich variation and competition of some candidate polarization configurations and switching modes in close relation to high and efficient electrical energy storage/discharge, large electrostriction effects, polarization rotations, and multistage switching phenomena. The experimental findings are well-reproduced by the computational optimization of crystal structure and the simulation of the switchable polarization, piezoelectric coefficients, and relative stability for each of the real or hypothetical hydrogen-ordered crystal phases. Effective prediction and strategic design are thereby guaranteed by systematically understanding the appropriate integration of experimental, computational, and data sciences. Full article

Flexible thin-film capacitors have gained a lot of attention in energy storage applications because of their high energy storage densities and efficient charge–discharge performances. Among these materials, antiferroelectric compounds with low residual polarization and strong saturation polarization have shown great promise. However, their comparatively low breakdown strength continues to be a major issue restricting further developments in their energy storage performance. While La³⁺ doping has been explored as a means to enhance the energy storage capabilities of antiferroelectric thin films, the specific influence of La³⁺ on breakdown strength and the underlying mechanism of phase transitions have not been thoroughly investigated in existing research. In this study, Pb_1−3x/2La_xZrO₃ thin films were successfully synthesized and deposited on mica substrates via the sol–gel process. By varying the concentration of La³⁺ ions, a detailed examination of the films’ microstructures, electrical properties, and energy storage performances was carried out to better understand how La³⁺ doping influences both breakdown strength and energy storage characteristics. The results show that doping with La³⁺ significantly improves the breakdown strength of the films, reduces the critical phase transition electric field (E_F-E_A), and enhances their energy storage capabilities. Notably, the Pb_0.91La_0.06ZrO₃ thin film achieved an impressive energy storage density of 34.9 J/cm³ with an efficiency of 58.3%, and at the maximum electric field strength of 1541 kV/cm, the recoverable energy density (W_rec) was 385% greater than that of the PbZrO₃ film. Additionally, the film still maintains good energy storage performance after 10⁷ cycles and 10⁴ bending cycles. These findings highlight the potential of flexible antiferroelectric Pb_0.91La_0.06ZrO₃ thin films for future energy storage applications. Full article

The nonvolatile application of La-doped ZrO₂ (ZLO) antiferroelectric capacitors is demonstrated in this study, accompanied by systematic investigation of device reliability. A built-in electric field was successfully established through engineered work function modulation. The fabricated nonvolatile (NV) ZLO capacitor exhibits not only avoidance of wake-up and fatigue phenomena typically observed in ferroelectric systems but also demonstration of ultralow coercive voltage (2Vc = 1.2 V) and exceptional endurance exceeding 10¹² cycles. The inherent unique polarization reversal mechanism in NV ZLO device was identified as the origin of a unidirectional imprint effect. Accelerated testing at 85 °C for 10⁴ s yielded conclusive evidence of retention characteristic stability. This investigation provides a novel perspective for the engineering utilization of antiferroelectric materials and facilitates their potential incorporation into advanced integrated circuit architectures. Full article

In this work, we introduce a high entropy effect in designing a relaxor ferroelectric (RFE)–antiferroelectric (AFE) crossover ceramic by incorporating a high entropy relaxor-like oxide (Pb_0.25Ba_0.25Sr_0.25Ca_0.25)TiO₃ with antiferroelectric NaNbO₃. The results show that the relaxor ferroelectricity of the system is enhanced with increasing NaNbO₃, and when the new composition reaches the highest configurational entropy, stable energy storage properties can be achieved. This is enabled by a high breakdown strength due to the small grain size and stable slim ferroelectric hysteresis loop with high efficiency due to entropy-stabilized short-range ordered polar nanoregions (PNRs). These findings showcase the potential of this strategy for exploiting new compositions of high-performance electrostatic capacitors. Full article

Dielectric capacitors with a high density of recoverable energy storage are extremely desirable for a variety of uses. However, these capacitors often exhibit lower breakdown strengths and energy efficiency compared to other materials, which poses significant challenges for their practical use. We report on a novel antiferroelectric ceramic system in the present study, (1 − x){0.97[0.985(0.93Bi_0.5Na_0.5TiO₃–0.07BaTiO₃)–0.015Er)]–0.03AlN}–xNaNbO₃ (x = 0, 10 wt%, 20 wt%, 30 wt%, and 40 wt%), synthesized via a conventional solid-state reaction approach. Here, (Bi_0.5Na_0.5TiO₃–BaTiO₃) is denoted as BNT–BT. We observed that varying the NaNbO₃ (NN) content gradually refined the grain size of the ceramics, narrowed their hysteresis loops, and transformed their phase structure from antiferroelectric to relaxor ferroelectric. These changes enhanced breakdown strength (E_b), thus increasing the performance of energy storage. Specifically, the recoverable energy density (W_rec) and energy storage efficiency (η), respectively, reached 0.67–1.06 J/cm³ and 44–88% at electric fields of 110–155 kV/cm, with the highest performance observed at 30 wt% NN doping. Additionally, over a broad range of temperature and frequency, the 70 wt% {0.97[0.985(BNT–BT)–0.015Er]–0.03AlN}–30 wt% NN ceramic demonstrated exceptional stability in energy storage. These results demonstrate the significant potential of lead-free(1 − x)({0.97[0.985(BNT–BT)–0.015Er]–0.03AlN}–xNN ceramics for the applications of high-performance energy storage. Full article

BiFeO₃/LaFeO₃ (BFO/LFO) epitaxial superlattices (SLs) with different bilayer thicknesses were grown via pulsed laser deposition on a (001)-SrTiO₃ substrate buffered with a SrRuO₃ bottom electrode. Room-temperature X-ray diffraction demonstrated strong structural changes in tuning the bilayer thickness while keeping the total thickness constant. Superlattices with thin periods were characterized by an antiferroelectric Pnma-like phase, while thick bilayers of the SLs were more likely to be described by a mixed state, including a rhombohedral ferroelectric bulk-like phase. Raman scattering analysis further confirmed the structural behaviour deduced by X-ray diffraction. Strain relaxation and symmetry changes were moreover accompanied by modifications in the dielectric properties correlated with the deduced (anti)ferroic structural phases. Full article

Ferroelectric and antiferroelectric materials are technologically important by the richness of applications such as piezoelectric, pyroelectric, electro-optic, elasto-optic, and nonlinear optic effects. Especially, oxides with a perovskite structure are very important. Its chemical formula is ABO₃, where A is a cation with a larger ionic radius, and B is a cation with a smaller ionic radius. Various elements are available in A- and B-sites. For example, the large piezoelectricity of well-known Pb(Zr_xTi_1−x)O₃ (PZT) solid solutions was found in a morphotropic phase boundary (MPB). The very high dielectric constant, colossal piezoelectric effect, and large electro-optic effect are induced by ferroelectric phase transitions. Such excellent functionalities are closely related to lattice dynamical instability. The vibrational spectroscopy, i.e., Raman scattering, Brillouin scattering, far-infrared, and terahertz time-domain spectroscopy, is a powerful tool for lattice dynamical anomalies. This paper intended a brief review of vibrational spectroscopy on ferroelectric phase transitions of advanced perovskite oxides. Full article

Plasma-enhanced atomic layer deposition (ALD) is a common method for fabricating Hf_0.5Zr_0.5O₂ (HZO) ferroelectric thin films that can be performed using direct-plasma (DP) and remote-plasma (RP) methods. This study proposed co-plasma ALD (CPALD), where DPALD and RPALD are applied simultaneously. HZO films fabricated using this method showed wake-up-free polarization properties, no anti-ferroelectricity, and high fatigue endurance when DPALD and RPALD started simultaneously. To minimize defects in the film that could negatively affect the low polarization properties and fatigue endurance, the direct plasma power was reduced to 75 W. Thus, excellent fatigue endurance for at least 10⁹ cycles was obtained under a high total remanent polarization of 47.3 μC/cm² and an applied voltage of 2.5 V. X-ray photoelectron spectroscopy and transmission electron microscopy were used to investigate the mechanisms responsible for these properties. The HZO films fabricated by CPALD contained few lattice defects (such as nonstoichiometric hafnium, nonlattice oxygen, and residual carbon) and no paraelectric phase (m-phase). This was attributed to the low-carbon residuals in the film, as high-energy activated radicals were supplied by the adsorbed precursors during film formation. This facilitated a smooth transition to the o-phase during heat treatment, which possessed ferroelectric properties. Full article

Ceramic capacitors have received great attention for use in pulse power systems owing to their ultra-fast charge–discharge rate, good temperature stability, and excellent fatigue resistance. However, the low energy storage density and low breakdown strength (BDS) of ceramic capacitors limit the practical applications of energy storage technologies. In this work, we present a series of relaxor ferroelectric ceramics (1−x) [0.94 Bi_0.5Na_0.5TiO₃ –0.06BaTiO₃]– x Sr_0.7Bi_0.2TiO₃ (1-x BNT-BT- x SBT; x = 0, 0.20, 0.225, 0.25, 0.275 and 0.30) with improved energy storage performances by combining relaxor and antiferroelectric properties. XRD, Raman spectra, and SEM characterizations of BNT-BT-SBT ceramics revealed a rhombohedral–tetragonal phase, highly dynamic polar nanoregions, and a reduction in grain size with a homogeneous and dense microstructure, respectively. A high dielectric constant of 1654 at 1 kHz and low remnant polarization of 1.39 µC/cm² were obtained with the addition of SBT for x = 0.275; these are beneficial for improving energy storage performance. The diffuse phase transition of these ceramics displays relaxor behavior, which is improved with SBT and confirmed by modified the Curie–Weiss law. The combining relaxor and antiferroelectric properties with fine grain size by the incorporation of SBT enables an enhanced maximum polarization of a minimized P-E loop, leading to an improved BDS. As a result, a high recoverable energy density W_rec of 1.02 J/cm³ and a high energy efficiency η of 75.98% at 89 kV/cm were achieved for an optimum composition of 0.725 [0.94BNT-0.06BT]-0.275 SBT. These results demonstrate that BNT-based relaxor ferroelectric ceramics are good candidates for next-generation ceramic capacitors and offer a potential strategy for exploiting novel high-performance ceramic materials. Full article

This work reports the synthesis method and various properties of four rod-like antiferroelectric (R) laterally substituted enantiomers, with or without fluorine atoms used as substituents in the benzene ring. The influence of fluorine substitution on the mesophase temperature range was determined. The synthesized compounds are three-ring rod-like smectics with a chiral center based on (R)-(−)-2-octanol. Their chemical and optical purity was checked using high-performance liquid chromatography (HPLC). Two newly synthesized enantiomers and three previously reported (R) enantiomers were used to formulate two antiferroelectric mixtures. The mesomorphic behavior was characterized by polarizing optical microscopy, differential scanning calorimetry, and X-ray diffraction (XRD). The helical pitch and tilt angle measurements were done using the selective light reflection phenomenon and the electro-optical method, respectively. All the enantiomers exhibit a wide temperature range of the antiferroelectric phase, with a high tilt angle. Furthermore, the enantiomer with lateral fluorine substitution in the ortho position has a very long helical pitch (more than 2.0 µm), relatively low enthalpy of melting point, and a tilt angle close to 45 degrees. The designed (R) enantiomers can be useful for formulating eutectic mixtures for further use in various devices, including photonics and optoelectronics. Full article