Ferroelectric Materials and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials, Devices and Applications".

Deadline for manuscript submissions: closed (15 January 2025) | Viewed by 1319

Special Issue Editors


E-Mail Website
Guest Editor
Imec, Kapeldreef 75, 3001 Leuven, Belgium
Interests: thin films; complex oxides; ferroelectrics; diffraction

E-Mail Website
Guest Editor
Imec, 3000 Leuven, Belgium
Interests: ferroelectric memories; semiconductor devices
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Interests: ferroelectric memories; wide band gap semiconductor devices; reliability

Special Issue Information

Dear Colleagues,

Ferroelectric materials have attracted considerable attention in recent years due to their potential broad applications, such as in memory technologies and optical I/O. In memory particularly, ferroelectric materials can offer advantages such as high speed, low power consumption, non-volatility and scalability over conventional materials. However, there are also many challenges and open questions in the synthesis, characterization and integration of ferroelectric materials, as well as in the design and optimization of ferroelectrics for devices. One of the main goals of ferroelectric research should be to understand the fundamental science behind ferroelectric behavior and apply this knowledge to design and optimize ferroelectric device fabrication. Ferroelectric properties strongly depend on the crystal structure and symmetry of the materials, which can be influenced by external factors such as temperature, electric field and strain. Therefore, it is essential to investigate the relationship between the structure and the functionality of ferroelectric materials, and to explore the mechanisms of polarization switching, domain wall motion and phase transitions. Among the various classes of ferroelectric materials, perovskites, wurtzites and fluorite hafnates are of particular interest due to their high polarization, large dielectric response and compatibility with existing semiconductor technology. This Special Issue aims to provide a comprehensive and multidisciplinary overview of the current state-of-the-art and future perspectives of ferroelectric materials and applications. It will feature articles that address the structural, electrical and optical properties of these materials, as well as their potential applications in ferroelectric devices. It will also highlight the emerging trends and challenges in the field, such as novel ferroelectric materials, nanostructures, heterostructures, interfaces and domain engineering, as well as the integration of ferroelectric materials with other functional materials. This overview of the field will showcase the diverse and interdisciplinary applications of ferroelectric materials.

Technical Program Committee Member:
Title: Mr.
Name: Pratik Bagul
Affiliation: Imec, 3000 Leuven, Belgium
Homepage: https://scholar.google.com/citations?user=TKfA1yAAAAAJ&hl=en
E-mail: pratik.bagul@imec.be
Research Interests: ferroelectric materials; thin films

Dr. Sean R.C. McMitchell
Dr. Nicolò Ronchi
Dr. Tian-Li Wu
Guest Editors

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Keywords

  • ferroelectric
  • FeRAM
  • memory
  • electro-optical
  • polarization
  • FeFET

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Published Papers (2 papers)

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Research

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11 pages, 3052 KiB  
Article
Structural, Vibrational, and Dielectric Properties of BiFeO3/LaFeO3 Superlattices Grown on (001)-SrTiO3
by Mouna Khiari, Razvan Burcea, Oana Condurache, Maxime Vallet, Anna Cantaluppi, Amani Melhem, Brahim Dkhil and Houssny Bouyanfif
Electronics 2025, 14(6), 1117; https://doi.org/10.3390/electronics14061117 - 12 Mar 2025
Viewed by 437
Abstract
BiFeO3/LaFeO3 (BFO/LFO) epitaxial superlattices (SLs) with different bilayer thicknesses were grown via pulsed laser deposition on a (001)-SrTiO3 substrate buffered with a SrRuO3 bottom electrode. Room-temperature X-ray diffraction demonstrated strong structural changes in tuning the bilayer thickness while [...] Read more.
BiFeO3/LaFeO3 (BFO/LFO) epitaxial superlattices (SLs) with different bilayer thicknesses were grown via pulsed laser deposition on a (001)-SrTiO3 substrate buffered with a SrRuO3 bottom electrode. Room-temperature X-ray diffraction demonstrated strong structural changes in tuning the bilayer thickness while keeping the total thickness constant. Superlattices with thin periods were characterized by an antiferroelectric Pnma-like phase, while thick bilayers of the SLs were more likely to be described by a mixed state, including a rhombohedral ferroelectric bulk-like phase. Raman scattering analysis further confirmed the structural behaviour deduced by X-ray diffraction. Strain relaxation and symmetry changes were moreover accompanied by modifications in the dielectric properties correlated with the deduced (anti)ferroic structural phases. Full article
(This article belongs to the Special Issue Ferroelectric Materials and Applications)
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Review

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29 pages, 6912 KiB  
Review
A Framework for Embedded Non-Volatile Memory Development: Examples from Pb(ZrxTi1−x)O3 Ferroelectric Memory Development at Texas Instruments
by Ted Moise, Scott Summerfelt and John Rodriguez
Electronics 2025, 14(4), 818; https://doi.org/10.3390/electronics14040818 - 19 Feb 2025
Viewed by 585
Abstract
An overview of the steps employed to advance non-volatile Pb(ZrxTi1−x)O3-based materials from parallel capacitor array test structures to embedded 130 nm (1.5 V operation) memory product release is presented. Specific development stages include parallel capacitor array evaluation, [...] Read more.
An overview of the steps employed to advance non-volatile Pb(ZrxTi1−x)O3-based materials from parallel capacitor array test structures to embedded 130 nm (1.5 V operation) memory product release is presented. Specific development stages include parallel capacitor array evaluation, capacitor characterization array development, memory macro creation and measurement, and initial product design and qualification. Representative data, learning goals, and critical outputs will be presented for each development phase. We note that the cost and complexity of the development effort increase dramatically as the new technology approaches high-volume manufacturing. We hope that the documentation of our experiences in this manuscript may be of assistance to those teams striving to create the next generations of non-volatile embedded memory technology. Full article
(This article belongs to the Special Issue Ferroelectric Materials and Applications)
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