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Electronics
Volume 14
Issue 23
10.3390/electronics14234593
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Dynamic Imprint and Recovery Mechanisms in Hf0.2Zr0.8O2 Anti-Ferroelectric Capacitors with FORC Characterization

by
Yuetong Huo
1,
Jianguo Li
2,
Zeping Weng
3,
Yaru Ding
4,
Lijian Chen
2,4,
Jiabin Qi
2,
Yiming Qu
2,* and
Yi Zhao
2,*
1
School of Integrated Circuits, East China Normal University, Shanghai 200241, China
2
Research Center of Integrated Circuits, Huada Semiconductor, Shanghai 201203, China
3
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
4
College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
*
Authors to whom correspondence should be addressed.
Electronics 2025, 14(23), 4593; https://doi.org/10.3390/electronics14234593 (registering DOI)
Submission received: 7 October 2025 / Revised: 6 November 2025 / Accepted: 20 November 2025 / Published: 23 November 2025
(This article belongs to the Special Issue Integration of Emerging Memory and Neuromorphic Architecture Chips)
Versions Notes

Abstract

The conventional static imprint effect in HfxZr1−xO2 (HZO) ferroelectric (FE) devices, which degrades data retention, is generally characterized by a shift in the hysteresis loop along the electric field axis. Unlike the static imprint effect, the dynamic imprint effect emerges under dynamic electric fields or actual operating conditions, making the FE film exceptionally sensitive to switching pulse parameters and domain history. In HZO anti-ferroelectric (AFE) devices, this dynamic imprint effect alters the coercive field distribution associated with domain switching and poses a significant challenge to long-term stable device operation. This study systematically investigates the dynamic imprint effect and its recovery process using a comprehensive integration of first-order reversal curve (FORC) analysis, transient current-voltage (I-V), and polarization-voltage (P-V) characterization. By analyzing localized imprint behavior under sub-cycling conditions, mechanisms and recovery pathways of imprint in AFE devices are proposed. Finally, possible physics-based mechanisms describing imprint behaviors and recovery behaviors are discussed, providing insights for optimizing AFE memory technology performance and reliability.
Keywords: anti-ferroelectric; FORC; sub-cycling; split-up; imprint; recovery anti-ferroelectric; FORC; sub-cycling; split-up; imprint; recovery

Share and Cite

MDPI and ACS Style

Huo, Y.; Li, J.; Weng, Z.; Ding, Y.; Chen, L.; Qi, J.; Qu, Y.; Zhao, Y. Dynamic Imprint and Recovery Mechanisms in Hf0.2Zr0.8O2 Anti-Ferroelectric Capacitors with FORC Characterization. Electronics 2025, 14, 4593. https://doi.org/10.3390/electronics14234593

AMA Style

Huo Y, Li J, Weng Z, Ding Y, Chen L, Qi J, Qu Y, Zhao Y. Dynamic Imprint and Recovery Mechanisms in Hf0.2Zr0.8O2 Anti-Ferroelectric Capacitors with FORC Characterization. Electronics. 2025; 14(23):4593. https://doi.org/10.3390/electronics14234593

Chicago/Turabian Style

Huo, Yuetong, Jianguo Li, Zeping Weng, Yaru Ding, Lijian Chen, Jiabin Qi, Yiming Qu, and Yi Zhao. 2025. "Dynamic Imprint and Recovery Mechanisms in Hf0.2Zr0.8O2 Anti-Ferroelectric Capacitors with FORC Characterization" Electronics 14, no. 23: 4593. https://doi.org/10.3390/electronics14234593

APA Style

Huo, Y., Li, J., Weng, Z., Ding, Y., Chen, L., Qi, J., Qu, Y., & Zhao, Y. (2025). Dynamic Imprint and Recovery Mechanisms in Hf0.2Zr0.8O2 Anti-Ferroelectric Capacitors with FORC Characterization. Electronics, 14(23), 4593. https://doi.org/10.3390/electronics14234593

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