Search Results (73)

By employing graded-interfaces modeling, ~10 μm-emitting quantum cascade lasers (QCLs) are designed with previously found conditions for record-high wall-plug efficiency (WPE) operation of mid-infrared QCLs: direct resonant-tunneling injection from a prior-stage low-energy state into the upper-laser level, photon-induced carrier transport, and carrier-leakage suppression via the step-taper active-region (STA) approach. For devices with interface-roughness (IFR) parameters characteristic of optimized molecular-beam-epitaxy (MBE) growth, a maximum front-facet pulsed WPE value of 19.6% is projected for 60-stages STA-type devices. This results from several factors: 19 mV voltage defect at threshold, 72% voltage efficiency at the maximum WPE point, and ~93% injection efficiency due to strong carrier-leakage suppression. 2.7 W peak front-facet power is projected. For devices with our metal–organic chemical vapor deposition (MOCVD)-growth IFR parameters, the projected maximum pulsed WPE value is 17.1%, i.e., 1.7 times higher than the highest reported front-facet WPE value from ~10 μm-emitting MOCVD-grown QCLs. Studies regarding the WPE value variation with the stage number, while employing waveguide designs having the same empty cavity loss, reveal that the maximum WPE value remains almost the same for 50–60 stages devices. In turn, there is potential for obtaining significantly higher CW powers than from conventional ~10 μm-emitting QCLs. Full article

Silicon photonics offers a powerful route to leverage existing microelectronics infrastructure to enhance performance and enable new applications in data processing and sensing. Among the available material platforms, silicon nitride (Si₃N₄) provides significant advantages due to its wide optical transmission window. A key challenge, however, remains the monolithic integration of passive nitride-based photonic components with active electronic devices directly on silicon wafers. In this work, we propose and demonstrate a tapered bottom-cladding design that enables efficient coupling of visible light from Si₃N₄/SiO₂ core–cladding waveguides into planar p–n junction photodiodes fabricated on the silicon surface. Si₃N₄/SiO₂ waveguides were fabricated using fully CMOS-compatible processes and materials. Controlled reactive ion etching (RIE) of SiO₂ allowed the formation of vertically tapered claddings, and finite-difference time-domain (FDTD) simulations were carried out to analyze coupling efficiency across wavelengths from 509 nm to 740 nm. Simulations showed transmission efficiencies above 90% for taper angles below 30°, with near-total coupling at 10°. Experimental fabrication achieved angles as low as 8°. Responsivity simulations yielded values up to 311 mA W⁻¹ for photodiodes without internal gain. These results demonstrate the feasibility of fabricating monolithic Si-based waveguide–photodetector systems using simple, CMOS-compatible methods, opening a scalable path for integrated photonic–electronic devices operating in the visible range. Full article

Waveguide-integrated electro-optical modulators play a crucial role in the design of new-generation photonic integrated circuits. The target of this paper is to demonstrate the potential offered by the association of graphene (Gr) and hydrogenated amorphous silicon (a-Si:H) in enhancing silicon photonics technology, enabling, in particular, the fabrication of efficient, wide-bandwidth, highly compact active devices. The design of the proposed electro-optic modulator is based on accurate numerical simulations where Gr is explored as the active material, absorbing (or not) the light propagating along the waveguide core, with its absorption coefficient being tunable through the application of an external electric bias. By strategically embedding two Gr monolayers where the propagating optical field is at its maximum, the performance of the modulator is maximized, resulting in a 39.5 GHz 3 dB bandwidth, corresponding to a 0.34 dB/µm modulation depth. The straightforward feasibility of the proposed structure is bolstered by the use of the Plasma-Enhanced Chemical Vapor Deposition technique, which allows for the deposition of a-Si:H on a silicon-on-insulator platform as a post-processing phase, ensuring potential scalability and practical implementation for advanced photonics. Full article

Whispering-gallery-mode (WGM) microresonators are amongst the most promising optical sensors for detecting bio-chemical targets. A number of laser interrogation methods have been proposed and demonstrated over the last decade, based on scattering and absorption losses or resonance splitting and shift, harnessing the high-quality factor and ultra-small volume of WGMs. Actually, regardless of the sensitivity enhancement, their practical sensing operation may be hampered by the complexity of coupling devices as well as the signalprocessing required to extract the WGM response. Here, we use a silica microsphere immersed in an aqueous environment and efficiently excite optical WGMs with a free-space visible laser, thus collecting the relevant information from the transmitted and back-scattered light without any optical coupler, fiber, or waveguide. We show that a 640-nm diode laser, actively frequency-locked on resonance, provides real-time, fast sensing of dielectric nanoparticles approaching the surface with direct analog readout. Thanks to our illumination scheme, the sensor can be kept in water and operate for days without degradation or loss of sensitivity. Diverse noise contributions are carefully considered and quantified in our system, showing a minimum detectable particle size below 1 nm essentially limited by the residual laser microcavity jitter. Further analysis reveals that the inherent laserfrequency instability in the short, -mid-term operation regime sets an ultimate bound of 0.3 nm. Based on this work, we envisage the possibility to extend our method in view of developing new viable approaches for detection of nanoplastics in natural water without resorting to complex chemical laboratory methods. Full article

Integrated optical waveguide amplifiers, with their compact footprint, low power consumption, and scalability, are the basis for optical communications. The realization of high gain in such integrated devices is made more challenging by the tight optical constraints. In this work, we present efficient amplification in an erbium–ytterbium-based hybrid slot waveguide consisting of a silicon nitride waveguide and a thin-film active layer/electron-beam resist. The electron-beam resist as the upper cladding layer not only possesses the role of protecting the waveguide but also has tighter optical confinement in the vertical cross-section direction. On this basis, an accurate and comprehensive dynamic model of an erbium–ytterbium co-doped amplifier is realized by introducing quenched ions. A modal gain of above 20 dB is achieved at the signal wavelength of 1530 nm in a 1.4 cm long hybrid slot waveguide, with fractions of quenched ions f_q = 30%. In addition, the proposed hybrid waveguide amplifiers exhibit higher modal gain than conventional air-clad amplifiers under the same conditions. Endowing silicon nitride photonic integrated circuits with efficient amplification enriches the integration of various active functionalities on silicon. Full article

Nanoplasmonic structures have emerged as a promising approach to address light trapping limitations in thin-film optoelectronic devices. This study investigates the integration of metallic nanoparticle arrays onto nanocrystalline silicon (nc-Si:H) thin films to enhance optical absorption through plasmonic effects. Using finite-difference time-domain (FDTD) simulations, we systematically optimize key design parameters, including nanoparticle geometry, spacing, metal type (Ag and Al), dielectric spacer material, and absorber layer thickness. The results show that localized surface plasmon resonances (LSPRs) significantly amplify near-field intensities, improve forward scattering, and facilitate coupling into waveguide modes within the active layer. These effects lead to a measurable increase in integrated quantum efficiency, with absorption improvements reaching up to 30% compared to bare nc-Si:H films. The findings establish a reliable design framework for engineering nanoplasmonic architectures that can be applied to enhance performance in photovoltaic devices, photodetectors, and other optoelectronic systems. Full article

This work reports the design of a 1x2 photonic digital switch controlled by an electrically induced metasurface, configurated by a rectangular array of points where the refractive index is locally changed through the application of an external bias. The device is simulated using the Beam Propagation Method (BPM) and Finite Difference Time Domain (FDTD) algorithms and the structure under evaluation is an amorphous silicon 1x2 multimode interference (MMI), joined to an arrayed Metal Oxide Semiconductor (MOS) structure Al/SiNx/a-Si:H/ITO to be used in active-matrix pixel fashion to control the output of the switch. MMI couplers, based on self-imaging multimode waveguides, are very compact integrated optical components that can perform many different splitting and recombining functions. The input–output model has been defined using a machine learning approach; a high number of images have been generated through simulations, based on the beam propagation algorithm, obtaining a large dataset for an MMI structure under different activation maps of the MOS pixels. This dataset has been used for training and testing of a machine learning algorithm for the classification of the MMI configuration in terms of binary digital output for a 1x2 switch. Also, a statistical analysis has been produced, targeting the definition of the most incident-activated pixel for each switch operation. An optimal configuration is proposed and applied to demonstrate the operation of a digital cascaded switch. This proof of concept paves the way to a more complex device class, supporting the recent advances in programmable photonic integrated circuits. Full article

This study presents a new multiple-input multiple-output (MIMO) antenna array system designed for sub-6 GHz fifth generation (5G) cellular applications. The design features eight compact trapezoid slot elements with L-shaped CPW (Coplanar Waveguide) feedlines, providing broad bandwidth and radiation/polarization diversity. The antenna elements are compact in size and function within the frequency spectrum spanning from 3.2 to 6 GHz. They have been strategically positioned at the peripheral corners of the smartphone mainboard, resulting in a compact overall footprint of 75 mm × 150 mm FR4. Within this design framework, there are four pairs of antennas, each aligned to offer both horizontal and vertical polarization options. In addition, despite the absence of decoupling structures, the adjacent elements in the array exhibit high isolation. The array demonstrates a good bandwidth of 2800 MHz, essential for 5G applications requiring high data rates and reliable connectivity, high radiation efficiency, and dual-polarized/full-coverage radiation. Furthermore, it achieves low ECC (Envelope Correlation Coefficient) and TARC (Total Active Reflection Coefficient) values, measuring better than 0.005 and −20 dB, respectively. With its compact and planar configuration, quite broad bandwidth, acceptable SAR (Specific Absorption Rate) and excellent radiation characteristics, this suggested MIMO antenna array design shows good promise for integration into 5G hand-portable devices. Furthermore, a compact phased-array millimeter-wave (mmWave) antenna with broad bandwidth is introduced as a proof of concept for higher frequency antenna integration. This design underscores the potential to support future 5G and 6G applications, enabling advanced connectivity in smartphones. Full article

Graded-interfaces modeling unveils key features of high-power, high-efficiency quantum-cascade lasers (QCLs): direct resonant-tunneling injection from a prior-stage, low-energy state into the upper-laser (ul) level, over a wide (~50 nm) multiple-barrier region; and a new type of photon-induced carrier transport (PICT). Stage-level QCL operation primarily involves two steps: injection into the ul level and photon-assisted diagonal transition. Furthermore, under certain conditions, a prior-stage low-energy state, extending deep into the next stage, is the ul level, thus making such devices injectionless QCLs and leading to stronger PICT action due to quicker gain recovery. Thermalization within a miniband ensures population inversion between a state therein and a state in the next miniband. Using graded-interfaces modeling, step-tapered active-region (STA) QCLs possessing PICT action have been designed for carrier-leakage suppression. A preliminary 4.6 µm emitting STA design of a metal–organic chemical-vapor deposition (MOCVD)-grown QCL led to an experimental 19.1% front-facet, peak wall-plug efficiency (WPE). Pure, diffraction-limited beam operation is obtained at 1.3 W CW power. A low-leakage 4.7 µm emitting design provides a projected 24.5% WPE value, considering MOCVD-growth, graded-interface interface-roughness (IFR) parameters, and waveguide loss (α_w). The normalized leakage-current density, J_leak/J_th, is 17.5% vs. 28% for the record-WPE 4.9 µm emitting QCL. Then, when considering the IFR parameters and α_w values of optimized-crystal-growth QCLs, J_leak/J_th decreases to 13.5%, and the front-facet WPE value reaches 33%, thus approaching the ~41% fundamental limit. The potential of graded-interfaces modeling to become the design tool for achieving room-temperature operation of terahertz QCLs is discussed. Full article

A broadband 28 nm complementary metal–oxide–semiconductor (CMOS) power amplifier was implemented using a distributed amplification design. To develop a model library for high-frequency design, various test patterns for active and passive elements were fabricated and compared through measurements. As a result, a symmetrical n-channel field-effect transistor (NFET) was used as the active device, and a co-planar waveguide (CPW) with floating bottom metal layers was chosen as the transmission line for the passive element. These choices demonstrated superior radio frequency (RF) characteristics at high frequencies compared to other device candidates. Furthermore, to address the low breakdown voltage of CMOS, a triple-stacked FET structure was designed as the gain cell of the distributed power amplifier (DPA). The fabricated DPA showed a maximum small-signal gain of 22 dB and a minimum of 10 dB from DC to 56 GHz, with a maximum saturated output power of 20 dBm and a minimum of 13 dBm from 1 to 39 GHz. Notably, these results were achieved on the first attempt by designing solely based on measurement data from the test patterns. Full article

In this study, the potential of employing SiN_x (silicon nitride) waveguide platforms to enable the use of liquid-crystal-based phase shifters for on-chip optical modulators was thoroughly investigated using 3D-FDTD (3D finite-difference time-domain) simulations. The entire structure of liquid-crystal-based Mach–Zehnder interferometer (MZI) optical modulators, consisting of multi-mode interferometer splitters, different tapering sections, and liquid-crystal-based phase shifters, was systematically and holistically investigated with a view to developing a compact, wideband, and CMOS-compatible (complementary metal-oxide semiconductor) bias voltage optical modulator with competitive modulation efficiency, good fabrication tolerance, and single-mode operation using the same SiN_x waveguide layer for the entire device. The trade-off between several important parameters is critically discussed in order to reach a conclusion on the possible optimized parameter sets. Contrary to previous demonstrations, this investigation focused on the potential of achieving such an optical device using the same SiN_x waveguide layer for the entire device, including both the passive and active regions. Significantly, we show that it is necessary to carefully select the phase shifter length of the LC-based (liquid crystal) MZI optical modulator, as the phase shifter length required to obtain a π phase shift could be as low as a few tens of microns; therefore, a phase shifter length that is too long can contradictorily worsen the optical modulation. Full article

In this study, we propose a mechanism for tuning the modal characteristics of a wedge plasmonic waveguide. The wedge plasmonic waveguide is composed of a thin metallic layer deposited on a wedge-shaped dielectric waveguide. The tuning mechanism is based on controlling the surface plasmon polariton (SPP) mode at the interface between the metal layer and the dielectric waveguide instead of controlling the SPP mode at the interface between the wedge-shaped metal layer and the surrounding media. This mechanism is performed by modulating the effective refractive index of the dielectric waveguide using a closely coupled tuning waveguide. The numerically investigated results show that the propagation length of the device can be tuned more than 100%; this characteristic has not been explored yet in previous studies. The effective mode area with deep-subwavelength size is almost kept constant while tuning the propagation length. This study offers new insights into tailoring the modal characteristics of plasmonic waveguides based on controlling the mode property at the interface between the metal layer and the dielectric waveguide. This study is also a guideline for developing active plasmonic devices such as tunable nanoscale lightwave guiding waveguides and THz optic modulators. Full article

Sapphire has various applications in photonics due to its broadband transparency, high-contrast index, and chemical and physical stability. Photonics integration on the sapphire platform has been proposed, along with potentially high-performance lasers made of group III–V materials. In parallel with developing active devices for photonics integration applications, in this work, silicon nitride optical waveguides on a sapphire substrate were analyzed using the commercial software Comsol Multiphysics in a spectral window of 800~2400 nm, covering the operating wavelengths of III–V lasers, which could be monolithically or hybridly integrated on the same substrate. A high confinement factor of ~90% near the single-mode limit was obtained, and a low bending loss of ~0.01 dB was effectively achieved with the bending radius reaching 90 μm, 70 μm, and 40 μm for wavelengths of 2000 nm, 1550 nm, and 850 nm, respectively. Furthermore, the use of a pedestal structure or a SiO₂ bottom cladding layer has shown potential to further reduce bending losses. The introduction of a SiO₂ bottom cladding layer effectively eliminates the influence of the substrate’s larger refractive index, resulting in further improvement in waveguide performance. The platform enables tightly built waveguides and small bending radii with high field confinement and low propagation losses, showcasing silicon nitride waveguides on sapphire as promising passive components for the development of high-performance and cost-effective PICs. Full article

In previous research, we presented an apparatus designed for comprehensive and systematic surveillance of trees against borers. This apparatus entailed the insertion of an uncoated waveguide into the tree trunk, enabling the transmission of micro-vibrations generated by moving or digging larvae to a piezoelectric probe. Subsequent recordings were then transmitted at predetermined intervals to a server, where analysis was conducted manually to assess the infestation status of the tree. However, this method is hampered by significant limitations when scaling to monitor thousands of trees across extensive spatial domains. In this study, we address this challenge by integrating signal processing techniques capable of distinguishing vibrations attributable to borers from those originating externally to the tree. Our primary innovation involves quantifying the impulses resulting from the fracturing of wood fibers due to borer activity. The device employs criteria such as impulse duration and a strategy of waiting for periods of relative quietness before commencing the counting of impulses. Additionally, we provide an annotated large-scale database comprising laboratory and field vibrational recordings, which will facilitate further advancements in this research domain. Full article

A set of novel Donor-Acceptor-Donor (D-A-D) benzoselenadiazole derivatives has been synthesized and crystallized in nanocrystals in order to explore the correlation between their chemical structure and the waveguided luminescent properties. The findings reveal that all crystals exhibit luminescence and active optical waveguiding, demonstrating the ability to adjust their luminescence within a broad spectral range of 550–700 nm depending on the donor group attached to the benzoselenadiazole core. Notably, a clear relationship exists between the HOMO-LUMO energy gaps of each compound and the color emission of the corresponding optical waveguides. These outcomes affirm the feasibility of modifying the color emission of organic waveguides through suitable chemical functionalization. Importantly, this study marks the first utilization of benzoseleniadiazole derivatives for such purposes, underscoring the originality of this research. In addition, the obtention of nanocrystals is a key tool for the implementation of miniaturized photonic devices. Full article