Search Results (1,017)

Nanotechnology has emerged as a key driver in radioisotope batteries, which offer unique advantages for long-term, maintenance-free energy supply in deep space exploration, medical implants, and nuclear waste utilization. This review summarizes recent progress in applying nanomaterials and nanostructures to overcome the limitations of nuclear batteries, including low energy conversion efficiency and poor stability. The main content focuses on the three primary conversion mechanisms of thermoelectric, radio-voltaic, and radio-photovoltaic batteries, discussing high-performance thermoelectric nanomaterials such as SiGe alloys, wide-bandgap semiconductors including diamond and SiC for enhanced carrier collection, and nanoscale radionuclide ources to mitigate self-absorption losses. This review further elaborates on how nanostructure regulation and interface engineering have significantly improved carrier collection efficiency and device stability. These advances have enabled notable civilian applications, such as the BV100 and “Zhulong No.1” nuclear batteries. Despite this progress, challenges remain in ensuring long-term material stability under extreme environments, maintaining performance consistency during macroscopic device integration, and addressing the high fabrication costs. The review concludes by outlining future research directions, including the development of novel nanomaterial systems, innovative nanostructure designs, scalable manufacturing processes, and enhanced device stability and safety, to further advance next-generation radioisotope batteries. Full article

Wide-bandgap power devices, particularly silicon carbide (SiC) MOSFETs, have seen widespread adoption in electric vehicle (EV) motor drive systems due to their superior switching characteristics, including high switching speeds and high switching frequencies. However, these advantages exacerbate motor terminal overvoltage, with peaks reaching twice the inverter output voltage, causing insulation breakdown in windings and bearing electro-corrosion, which shorten motor lifespan. Traditional overvoltage prediction methods, such as distributed parameter models or detailed ladder network approaches, require extensive system parameters and involve high computational loads, while simplified models lack generality. To address these issues, this paper proposes a simplified prediction method based on a lumped ladder network model combined with frequency scanning. The approach uses impedance analysis to identify anti-resonance frequencies, enabling direct estimation of overvoltage amplitudes without prior knowledge of cable or motor specifics. Experimental validation on a SiC-based drive system demonstrates prediction errors below 10% and a reduction in computational time compared to conventional methods. Full article

Zinc oxide (ZnO) is currently one of the most significant wide-bandgap semiconductor materials, attracting extensive research across diverse fields including materials science, chemistry, physics, medicine, electronics, and power engineering. Its exceptional properties, such as high optical transparency, high electron mobility, chemical stability, and compatibility with low-cost fabrication techniques, have established ZnO as a versatile material with immense application potential. A critical application for ZnO is its role as a transparent conducting oxide (TCO) in modern optoelectronic and photovoltaic devices, as well as in sensors, transparent electronics, and spintronics. To meet the requirements of these advanced applications, precise control over the structural, optical, and electrical properties of ZnO thin films is essential. This is effectively achieved through the selection of specific synthesis methods and intentional modification techniques, such as doping. This review provides a comprehensive overview of the synthesis and modification of ZnO thin films, with a particular focus on how various dopants influence their fundamental characteristics. The work discusses a range of deposition techniques, including physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), sol–gel methods, spray pyrolysis, and other solution-based approaches. The novelty of this review lies in its comparative analysis of different doping strategies combined with various thin-film deposition techniques, highlighting how specific synthesis routes influence dopant incorporation and ultimately determine functional properties. Furthermore, recent advances in tailoring ZnO thin films are summarized, alongside the identification of key challenges and future research directions. Ultimately, this work aims to provide researchers with a systematic perspective on the synthesis–structure–property relationships in doped ZnO thin films to support the development of optimized materials for next-generation electronic and optoelectronic devices. This review, thus, serves as a comprehensive reference for researchers and engineers seeking to optimize the functionality of ZnO-based thin films for emerging technological applications. Full article

This paper presents a flipped-voltage-follower low-dropout regulator (FVF-LDO) for power supply rejection enhancement and low-power operation in CMOS transimpedance amplifiers for optical receiver applications. The proposed FVF-LDO ensures high stability and reliable regulation over a wide range of load conditions by employing a flipped-voltage follower for fast local feedback and improved power supply rejection, while a super-source follower enhances the transient response through increased current-driving capability. A bandgap reference with a 3-bit trimming DAC is adopted to compensate process variations and support stable LDO operations, achieving a temperature coefficient of 19.6 ppm/°C over a wide range of −25 °C to 125 °C. The FVF-LDO exhibits a 101 mV undershoot under a 100 µA-to-10 mA load step with a 100 ns edge time. When applied to an optoelectronic inverter-based active-feedback transimpedance amplifier (TIA), the regulated supply improves the power supply rejection ratio (PSRR) from −6 dB to −38.3 dB. The proposed optoelectronic TIA realized in a 180 nm CMOS process achieves 67 dBΩ transimpedance gain, 869 MHz bandwidth, 66 dB dynamic range, 6.68 pA/√Hz input-referred noise current spectral density, and 4.68 mW power consumption from a single 1.8 V supply. The proposed TIA chip occupies a core area of 940 × 162 µm². Full article

The study of wide-bandgap nanomaterials has gained considerable attention in recent years, especially in the case of semiconductor oxides that exhibit full or partial optical transparency in fundamental research and technological applications. These include optoelectronic devices, gas sensors and photovoltaic cells, among others. The activation or adjustment of optical and structural properties, especially the bandgap and the parameters of unit cell lattice, can be achieved by varying the dopant concentration during the synthesis of semiconductor thin films in these applications. In this context, copper oxide has emerged as a valuable material, owing to its thoroughly analyzed structural behavior and its broad potential across multiple technological fields. The present work focuses on the synthesis of zinc-doped copper oxide (Zn_xCu_1−xO) thin films on silicon and quartz substrates through ultrasonic spray pyrolysis. The effects of varying the zinc doping concentration (0.0, 5.0, 10.0 and 20.0 at. %) on the morphological, structural, and optical characteristics of the Zn_xCu_1−xO films were analyzed. Scanning electron microscopy (SEM) analysis indicated a gradual increase in nanoparticle size, rising from 221 nm for CuO to approximately 322 nm for the Zn_0.2Cu_0.8O samples as the zinc content increased. Structural characterization via X-ray diffraction (XRD) confirmed a monoclinic crystal arrangement belonging to the $C_{2h}^6$ (c2/c) space group. As the percentage of zinc increased, the XRD peaks shifted to lower angles, consequently increasing the volume and crystal lattice parameters of the Zn_xCu_1−xO structure; this finding was additionally supported by a redshift observed in the Raman analysis. The transmittance spectra of the films showed low transmittance between 40 and 44%. The optical bandgap of the Zn_xCu_1−xO thin films was estimated from the transmittance data by applying the Tauc plot method. A decrease in the band gap was observed at higher doping concentrations. It can be confirmed that no secondary phases are observed at a doping level of 20.0 at. % of zinc, indicating good solubility of zinc in CuO. The analysis and discussion of these findings are included throughout this work to elucidate the controversies noted in the literature. Full article

Wide-bandgap (WBG) semiconductors are propelling a paradigm shift in advanced power electronics, offering functionality that includes higher-switching-frequency operation with improved efficiency and power density possibilities. Gallium nitride (GaN) exhibits unique material properties that correspond to device parameters beneficial for achieving an improved performance compared to its counterparts. The inception of GaN power semiconductor devices has enabled advanced power electronics to realize efficient and compact power converters. However, the current rating of the devices is constrained, and paralleling of the devices is vital to realize high-currentrated power modules. Furthermore, paralleling of the devices can provide improved cooling results in high-power-density systems. This paper presents a comprehensive review study of the paralleling of GaN devices to discuss the different challenges associated with paralleling. One of the fundamental challenges is associated with the design of a structure for paralleling GaN devices. The parallel device structure consequently impacts the parasitics of the device, which limit the operating switching frequency and thermo-mechanical aspects. Furthermore, power loop inductance, gate loop inductance asymmetry, common-source inductance, gate inductance trace length mismatch, and different challenges lead to design trade-offs and efforts to optimize the design by realizing an appropriate trade-off, considering low-inductance packaging along with thermal strategies, and considering a parallel circuit layout and structure. Considering the recent research trends and studies related to the design of parallel GaN devices, this paper presents future perspectives anticipating the realization of an improved parallel GaN device structure. Full article

Wireless power transfer (WPT) continues to gain momentum across diverse applications, from milliwatt biomedical implants to tens-of-kilowatts electric vehicle charging. Within short-distance WPT, inductive wireless power transfer (IPT) and capacitive wireless power transfer (CPT) are the two dominant approaches, each with distinct advantages and limitations. This paper surveys the recent experimental progress in IPT and CPT reported in 133 peer-reviewed publications between 2020 and 2025. The survey focuses on system-level demonstrations that include quantitative performance metrics, with particular emphasis on DC-DC efficiency. Key parameters, such as power level, operating frequency, transfer distance, and coupler area, are systematically compared. The survey reveals that IPT remains dominant in very high-power and larger-gap realizations, while CPT has expanded beyond its traditionally short-gap applications and now competes directly with IPT across a wide range of power levels. Both techniques routinely achieve efficiencies exceeding 90% under diverse operating conditions, underscoring their growing maturity and potential to address future WPT demands. The presented data reveal measurable shifts in achievable power and efficiency in the last decade, reflecting the maturation of CPT and the influence of wide-bandgap power electronics. These findings establish an updated data-driven performance envelope derived from experimentally demonstrated systems, providing a reference for future experimental and modeling studies in short-range WPT. Full article

Fiber interferometers are widely used in precision measurement fields such as seismic observation, gravitational-wave detection, and aerospace guidance. However, phase noise in the Hz–kHz range has become an important factor limiting further improvement in measurement accuracy. In this work, a solid-core photonic crystal fiber (PCF) and a hollow-core photonic bandgap fiber (HC-PBGF) were introduced into the sensing arms of a fiber interferometer to reduce phase noise in this frequency range. Theoretical analysis showed that, compared with a conventional solid-core fiber, the PCF and the 19-cell HC-PBGF used in this study could reduce the phase noise by approximately 3 dB and 7 dB, respectively. The experimental results agreed well with the theoretical predictions, confirming that both fibers can effectively suppress high-frequency phase noise, with HC-PBGF showing superior noise reduction performance. This work provides a feasible approach for improving the performance of fiber interferometers in precision measurement. Full article

Heterogeneous photocatalysis is one of the most versatile and widely studied photochemical approaches for the degradation of recalcitrant pollutants. Owing to its favorable physicochemical properties, titanium dioxide (TiO₂) remains one of the most investigated semiconductor photocatalysts. However, its wide band-gap energy (3.2 eV) restricts its photoactivity to the UV region, which represents only a small fraction of the solar spectrum. A major challenge in this field is therefore the development of TiO₂-based materials capable of operating efficiently under visible light irradiation, enabling the use of solar energy as a sustainable primary source. Several strategies have been explored to extend the optical response of TiO₂, among which elemental doping remains one of the most effective and commonly applied. In this work, we conducted systematic comparative analysis to evaluate the photocatalytic performance of TiO₂ modified through different doping approaches. Sixty-one scientific reports published between 2015 and 2025 were analyzed, comparing three categories of dopants: (i) metal dopants, (ii) non-metal dopants, and (iii) co-doping systems. In the first section, we discuss fundamental concepts of photocatalysis and recent advances in doping strategies and surface modifications aimed at enhancing the photocatalytic performance of TiO₂. In the second section, we present a comparative analysis based on 61 scientific reports focusing on TiO₂ doping and co-doping processes. Finally, this study summarizes the different categories of doped TiO₂ photocatalysts by comparing the photocatalytic performance employing an alternative performance metric. Full article

The accelerating adoption of electric vehicles (EVs) is driving the demand for next-generation wide-bandgap (WBG) power devices that can deliver high efficiency, high power density, and robust operation under stringent electrical and thermal stress. Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have emerged as a leading WBG technology due to their high breakdown voltage, ultrafast switching capability, and low conduction and switching losses relative to silicon devices, enabling high-performance EV power converters such as on-board chargers, DC-DC converters, and traction inverters. This review provides a comprehensive device-level assessment of GaN HEMTs, emphasizing advanced device architectures, state-of-the-art discrete transistors, and their implications for high-frequency, high-efficiency power conversion. Critical performance and reliability challenges, including current collapse, self-heating, and gate degradation, are analyzed in the context of their physical mechanisms and operational behavior under realistic conditions such as elevated junction temperatures, high switching frequencies, and dynamic load profiles. Furthermore, emerging opportunities in ultra-wide-bandgap semiconductor technologies beyond GaN are discussed, providing insights to guide the design, optimization, and robust integration of WBG devices into next-generation EV power electronic systems. Full article

Ohmic contact resistance is a persistent and increasingly dominant bottleneck limiting the practical performance of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) power semiconductor devices. This review provides a comprehensive and comparative treatment of specific contact resistivity (${\rho }_c$) phenomena across five material systems—4H-SiC, GaN, β-Ga₂O₃, AlN/AlGaN, and diamond—spanning fundamental contact physics, characterization methodology, material-specific state of the art, device context, and advanced engineering strategies. A semi-empirical scaling analysis establishes that the minimum achievable ${\rho }_c$ increases by approximately one order of magnitude per 0.8–1.0 eV increase in bandgap, arising from the interplay of Fermi-level pinning, increasing carrier effective mass, and decreasing achievable near-surface doping concentration. The best demonstrated ${\rho }_c$ values range from ~3 × 10⁻⁸ Ω·cm² for GaN epitaxially regrown contacts to ~8 × 10⁻⁵ Ω·cm² for direct AlN metallization. The transition from alloyed to regrown contacts in GaN—delivering two orders of magnitude improvement—is identified as the paradigm model for UWBG contact development, with β-Ga₂O₃ most immediately positioned to follow this trajectory. Key challenges include the absence of p-type doping in β-Ga₂O₃, near-complete Fermi-level pinning in AlN, and the unsolved shallow-donor problem in diamond. Recommendations for standardized ${\rho }_c$ measurement protocols and priority research directions are presented. Full article

Single-crystal 4H-SiC, as a wide-bandgap semiconductor material, has become a key substrate for high-power electronics and radio frequency devices due to its outstanding characteristics such as high-voltage tolerance, high-temperature stability, high-frequency efficiency and low loss. However, its inherent properties of high hardness and low fracture toughness also pose severe challenges to the ultra-precision processing of wafer substrates. In this study, through molecular dynamics methods, the influence of diamond abrasive grains with different sharpness on the processing of 4H-SiC at different grinding speeds was simulated, with a focus on analyzing its surface morphology, material removal behavior and subsurface damage characteristics. The structural evolution of 4H-SiC workpieces and diamond abrasive grains was identified through the radial distribution function, and the dynamic changes in temperature and stress during processing were further investigated to clarify the mechanism of abrasive wear and graphitization phenomena. The results show that regular octahedral abrasive grains with higher sharpness have better material removal efficiency, but they also cause more significant subsurface damage. Increasing the grinding speed helps to reduce the depth of subsurface damage. In addition, high temperature and high stress are the key factors leading to the transformation of diamond into graphite. Even under low-speed grinding conditions, the edges of the abrasive grains may still undergo graphitization due to stress concentration. The above findings have theoretical significance for an in-depth understanding of the material removal mechanism of 4H-SiC nano-grinding, and can also provide an important reference for the development of high-performance grinding wheels for SiC grinding. Full article

This paper develops a symmetry-oriented regime-level framework for resonant DC-AC inverters that extends classical source duality toward a multidimensional representation of inverter operation. The proposed formulation introduces a compact inverter signature vector and associated symmetry operators to organize source-domain, detuning side, commutation, switch-path, and modal correspondences within a unified hierarchy. On this basis, a symmetry-guided workflow is defined using compact screening metrics for stress/circulation balance, phase displacement, and commutation feasibility, enabling early-stage comparison of operating regimes before topology-specific detailed design closure. The framework is demonstrated through an extended-duality pairing of two resonant DC-AC inverter regimes: an open-input super-resonant ZVS-like corridor and a closed-input sub-resonant ZCS-like corridor. The case studies show how the proposed regime signatures and screening metrics support structured reasoning about soft-switching corridors, stress redistribution, and device-class-dependent implications, including wide-bandgap (WBG) design tendencies. The proposed metrics are intended as low-order screening indicators and regime-selection tools rather than substitutes for detailed circuit, thermal, EMI, and device-level validation. Within this scope, the paper contributes an operational symmetry formalism that links duality-based interpretation to practical early-stage design organization and robustness-oriented comparison. Full article

Single-molecule white-light emitters have attracted much attention due to their potential applications in white organic light-emitting diodes (WOLEDs). Their key advantage lies in the ability to use a simple device structure, akin to that of monochromatic OLEDs, to produce WOLEDs. This approach not only simplifies the fabrication process but also reduces costs, improves device stability, and provides a shortcut for the rapid commercialization of WOLEDs. In this study, two novel single-molecule white-light emitters, SRFR-1PTZ (10-(4′-(9H-9,9′-spirobi[fluoren]-2-yl)-4a,10a-dihydro-10H-phenothiazine) and SRFR-2PTZ (2,7-bis(4a,10a-dihydro-10H-phenothiazin-10-yl)-9,9′-spirobi[fluorene]), were designed and synthesized, and successfully implemented in WOLED devices. Comprehensive photophysical characterization revealed that both compounds exhibited dual-emission characteristics in dichloromethane solution, displaying simultaneous fluorescence and phosphorescence. Notably, thermally activated delayed fluorescence (TADF) was clearly observed for SRFR-1PTZ, whereas SRFR-2PTZ did not exhibit TADF behavior. Electroluminescence studies demonstrated that both SRFR-1PTZ and SRFR-2PTZ served as good color-stable cool-white-light emitters under driving voltages of 7–10 V. Full article