Advanced Applications of Smart Power Technologies and Wide-Bandgap Semiconductors
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Power Electronics".
Deadline for manuscript submissions: 15 January 2026 | Viewed by 485
Special Issue Editor
Interests: power electronics; wide-bandgap semiconductors; energy systems; semiconductor device modelling; device physics; TCAD simulations
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
In recent years, wide bandgap (WBG) semiconductors and, in particular, silicon carbide (SiC) and gallium nitride (GaN) have been extensively proposed for power systems to improve current and future power electronics in different fields, such as industrial, automotive, aerospace, and energy conversion. Compared with conventional technologies, WBG semiconductors promise the realization of smaller, faster, more efficient, and rugged devices with low losses and high levels of quality and safety. However, the design and electrical characterization of WBG-based devices for smart power and advanced applications impose the deployment of intensive experimental and modelling efforts for the analysis of the critical aspects of their operation under specific bias conditions, especially in high-voltage, high-frequency, and high-temperature circuits.
In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:
- Application area of WBG semiconductors;
- SiC- and GaN-based devices;
- Novel design and modelling approaches;
- Heterojunction structures;
- Analysis of the material physical properties;
- Smart power technologies;
- Power generation;
- Power conversion systems;
- Power optimizers;
- Energy harvesting;
- Relevant experimental results;
- Advanced technological processes.
I look forward to receiving your contributions.
Dr. Fortunato Pezzimenti
Guest Editor
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Keywords
- smart power
- wide-bandgap semiconductor
- switching device
- field-effect transistor
- breakdown voltage
- series resistance
- temperature
- numerical simulation
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