Search Results (119)

One-dimensional (1D) multiferroic composite nanofibers are known to exhibit enhanced magnetoelectric (ME) coupling compared to their thin-film and bulk counterparts with similar compositions. While measuring their local ME coupling at the nanoscale is essential for understanding multiferroic interactions, it remains challenging due to their complex structure. In this work, multiferroic Pb(Zr_0.52Ti_0.48)O₃-CoFe₂O₄ (PZT-CFO) Janus-type nanofibers were synthesized by electrospinning. This unique structure is expected to provide a more compact and continuous interface between the ferroelectric and ferromagnetic phases compared to core–shell configurations. X-ray diffraction confirmed the coexistence of the perovskite PZT and spinel CFO phases without detectable impurities. The Janus configuration was directly verified by scanning electron microscopy and Kelvin probe force microscopy, which revealed a distinct surface potential contrast between the two halves of a single nanofiber. Magnetic hysteresis loops demonstrated the macroscopic ferromagnetic behavior of the nanofiber assembly. Local magnetoelectric coupling was probed using piezoresponse force microscopy under an applied magnetic field. An enhancement of the intrinsic piezoresponse from 15 pm to 19 pm. was observed upon applying an 8000 Oe magnetic field, providing direct evidence of strain-mediated ME coupling at the nanoscale. Although no ferroelectric domain switching was observed, likely due to the substrate clamping effect, the observed piezoresponse modulation confirms the functional ME interaction. These findings suggest that the Janus nanofibers hold promise for applications in one-dimensional multiferroic devices. Full article

Ferroelectric oxides, such as Pb(Zr,Ti)O₃ (PZT), have been shown to maintain stable ferroelectricity even in ultrathin film configurations. However, achieving controllable modulation of microstructure and physical responses in these ultrathin films remains challenging, limiting their potential applications in modern nanoelectronics and optoelectronics. Here, we propose a single-pulse femtosecond (fs) laser micromachining technique for high-precision engineering of microstructure and ferroelectric/piezoelectric responses in ultrathin PZT films. The results show that various microstructures can be selectively fabricated through precise control of fs laser fluence. Specifically, nano-concave arrays are formed via low-fluence laser irradiation, which is mainly attributed to the fs laser peening effect. In contrast, nano-volcano (nano-cave) structures are generated when the laser fluence is close to or reaches the ablation threshold. Additionally, applying an fs laser pulse with fluence exceeding a critical threshold enables the formation of nano-cave structures with controlled depth and width in PZT/Pt/SiO₂ multilayers. Piezoresponse force microscopy measurements demonstrate that the laser peening process significantly enhances the piezoelectric response while exerting minimal influence on the coercive field of PZT thin films. This improvement is attributed to the enhanced electromechanical energy transfer and concentrated compressive stresses distribution in PZT thin films resulting from the laser peening effect. Our study not only offers an effective strategy for microstructure and property engineering in ferroelectric materials at the nanoscale but also provides new insights into the underlying mechanism of ultrafast laser processing in ferroelectric thin films. Full article

This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO₂ and SrTiO₃ (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO₂/PZT, and Ti/TiO₂/STO/PZT) were synthesized to enable low-temperature growth and improve ferroelectric performance for advanced flexible MEMS. Characterizations including XRD, PFM, and P–E loop analysis evaluated crystallinity, piezoelectric coefficient d₃₃, and polarization behavior. The results demonstrate that the multilayered Ti/TiO₂/STO/PZT structure significantly enhances performance. XRD confirmed the STO buffer layer effectively reduces lattice mismatch with PZT to ~0.76%, promoting stable morphotropic phase boundary (MPB) composition formation. This optimized film exhibited superior piezoelectric and ferroelectric properties, with a high d₃₃ of 113.42 pm/V, representing an ~8.65% increase over unbuffered Ti/PZT samples, and displayed more uniform domain behavior in PFM imaging. Impedance spectroscopy showed the lowest minimum impedance of 8.96 Ω at 10.19 MHz, indicating strong electromechanical coupling. Furthermore, I–V measurements demonstrated significantly suppressed leakage currents in the STO-buffered samples, with current levels ranging from 10⁻¹² A to 10⁻⁹ A over ±3 V. This structure also showed excellent fatigue endurance through one million electrical cycles, confirming its mechanical and electrical stability. These findings highlight the potential of this hydrothermally engineered flexible heterostructure for high-performance actuators and sensors in advanced MEMS applications. Full article

This study presents the successful fabrication of lead zirconate titanate (PZT) thin films on silicon (Si) substrates using a hybrid deposition method combining spin-coating and RF sputtering techniques. Initially, a PZT layer was deposited through four successive spin-coating cycles, followed by an additional layer formed via RF sputtering. The resulting multilayer structure was annealed at ${700 }^{°}$C for 2 h to improve crystallinity. Comprehensive material characterization was conducted using XRD, SEM, cross-sectional SEM, EDX, and UV–VIS absorbance spectroscopy. The analyses confirmed the formation of a well-crystallized perovskite phase, a uniform surface morphology, and an optical band gap of approximately 3.55 eV, supporting its suitability for sensing applications. Building upon these findings, a multilayer PZT-based touch sensor was fabricated and electrically characterized. Low-frequency I–V measurements demonstrated consistent and repeatable polarization behavior under cyclic loading conditions. In addition, $\left|Z\right|$–f measurements were performed to assess the sensor’s dynamic electrical behavior. Although expected dielectric responses were observed, the absence of distinct anti-resonance peaks suggested non-idealities linked to ${\mathrm{Ag}}^{+}$ ion diffusion from the electrode layers. To account for these effects, the classical Butterworth–Van Dyke (BVD) equivalent circuit model was extended with additional inductive and resistive components representing parasitic pathways. This modified model provided excellent agreement with the measured impedance and phase data, offering deeper insight into the interplay between material degradation and electrical performance. Overall, the developed sensor structure exhibits strong potential for use in piezoelectric sensing applications, particularly for tactile and pressure-based interfaces. Full article

In the context of autonomous environmental monitoring, this study investigates a surface acoustic wave (SAW) sensor designed for selective carbon dioxide (CO₂) detection. The sensor is based on a LiTaO₃ piezoelectric substrate with copper interdigital transducers and a polyetherimide (PEI) layer, chosen for its high electromechanical coupling and strong CO₂ affinity. Finite element simulations were conducted to analyze the resonance frequency response under varying gas concentrations, film thicknesses, pressures, and temperatures. Results demonstrate a linear and sensitive frequency shift, with detection capability starting from 10 ppm. The sensor’s autonomy is ensured by a piezoelectric energy harvester composed of a cantilever beam structure with an attached seismic mass, where mechanical vibrations induce stress in a piezoelectric layer (PZT-5H or PVDF), generating electrical energy via the direct piezoelectric effect. Analytical and numerical analyses were performed to evaluate the influence of excitation frequency, material properties, and optimal load on power output. This integrated configuration offers a compact and energy-independent solution for real-time CO₂ monitoring in low-power or inaccessible environments. Full article

Porous PZT films offer significant potential due to tunable electromechanical properties, yet the polarization behavior remains insufficiently understood because of discontinuous morphology and domain structures. In this work, we study the impact of porosity on the spontaneous polarization and electromechanical response of PZT thin films fabricated using a multilayer spin-coating technique with various concentrations (0–14%) of polyvinylpyrrolidone (PVP) as a porogen. Atomic force microscopy (AFM) and piezoresponse force microscopy (PFM) were employed to analyze the local topography, domain distribution, and polarization behavior of the films. The results indicate that increasing porosity leads to substantial changes in grain morphology, dielectric permittivity, and polarization response. Films with higher porosity exhibit a more fragmented polarization distribution and reduced piezoresponse, while certain orientations demonstrate enhanced domain mobility. Despite the decrease in overall polarization, the local coercive field remains relatively stable, suggesting structural stability during the local polarization switching. The findings highlight the crucial role of grain boundaries and local charge redistribution in determining local polarization behavior. Full article

The polarization fatigue of PbZr_1−xTi_xO₃ (PZT) films is one of the most serious failure issues in their practical application. In the present work, Ba_0.3Sr_0.7Zr_0.18Ti_0.82O₃ (BSZT) was used as an inserting layer to improve the polarization fatigue of PbZr_0.50Ti_0.50O₃ thick film. PZT thick films and BSZT layers were deposited via magnetron sputtering technology. The effects of BSZT layer on the dielectric response, remanent polarization, and fatigue resistance of PZT thick films were investigated experimentally. The results showed that the dielectric constant increased from 457 to 880 (1 MHz), and the reversible/irreversible Rayleigh coefficients were also enhanced. The remanent polarization P_r of the PZT thick films increased from 37 μC/cm² to 42.4 μC/cm². After a 1.08 × 10⁹ cycles polarization fatigue test, the ferroelectric polarization loss was 9% for the PZT thick film at 368 kV/cm. The reversible/irreversible Rayleigh coefficients had a very small decline, of only 5% and 2%, respectively. This demonstrates that, different from the previously reported buffer layers, BSZT buffer layers can simultaneously enhance the dielectric and ferroelectric properties and improve the polarization fatigue of PZT thick films. Full article

Composites of ferromagnetic and ferroelectric phases are of interest for studies on mechanical strain-mediated coupling between the two phases and for a variety of applications in sensors, energy harvesting, and high-frequency devices. Nanocomposites are of particular importance since their surface area-to-volume ratio, a key factor that determines the strength of magneto-electric (ME) coupling, is much higher than for bulk or thin-film composites. Core–shell nano- and microcomposites of the ferroic phases are the preferred structures, since they are free of any clamping due to substrates that are present in nanobilayers or nanopillars on a substrate. This review concerns recent efforts on ME coupling in coaxial fibers of spinel or hexagonal ferrites for the magnetic phase and PZT or barium titanate for the ferroelectric phase. Several recent studies on the synthesis and ME measurements of fibers with nickel ferrite, nickel zinc ferrite, or cobalt ferrite for the spinel ferrite and M-, Y-, and W-types for the hexagonal ferrites were considered. Fibers synthesized by electrospinning were found to be free of impurity phases and had uniform core and shell structures. Piezo force microscopy (PFM) and scanning microwave microscopy (SMM) measurements of strengths of direct and converse ME effects on individual fibers showed evidence for strong coupling. Results of low-frequency ME voltage coefficient and magneto-dielectric effects on 2D and 3D films of the fibers assembled in a magnetic field, however, were indicative of ME couplings that were weaker than in bulk or thick-film composites. A strong ME interaction was only evident from data on magnetic field-induced variations in the remnant ferroelectric polarization in the discs of the fibers. Follow-up efforts aimed at further enhancement in the strengths of ME coupling in core–shell composites are also discussed in this review. Full article

Ferroelectric thin films with a high dielectric tunability (η) have great potential in electrically tunable applications, including microwave tunable devices such as phase shifters, filters, delay lines, etc. Using a modified Landau–Devonshire type thermodynamic potential, we show that the dielectric tunability η of a (001) tetragonal ferroelectric film can be analytically solved. After a survey of materials, a large η value above 60% was predicted to be achievable in a (001)-oriented tetragonal Pb(Zr_0.52Ti_0.48)O₃ (PZT) film. Experimentally, (001)-oriented PZT thin films were prepared on LaNiO₃-coated (100) SrTiO₃ substrates by using pulsed laser deposition (PLD). These films exhibited good dielectric tunability (η ~ 67.6%) measured at a small electric field E of ~250 kV/cm (corresponding to 5 volts for a 200 nm thick film). It only dropped down to ~54.2% when E was further reduced to 125 kV/cm (2.5 volts for 200 nm film). The measured dielectric tunability η as functions of the applied electric field E and measuring frequency f are discussed for a 500 nm thick PZT film, with the former well described by the theoretical η(E) curves and the latter showing a weak frequency dependence. These observations validate our integrated approach rooted in a theoretical understanding. Full article

With the increasing demand for ceramic-based capacitors in energy storage and electronics, ferroelectrics have gained attention due to their high dielectric coefficient. However, near the phase-transition temperature, a significant variation in dielectric coefficient leads to reduced temperature stability and degradation of electrical properties, limiting their applications. To address this, composite films with multiple phase-transition temperatures can provide a stable dielectric response over a broad temperature range. Conventional ceramic processing cannot achieve this due to interdiffusion during high-temperature sintering. To overcome this, we utilized the aerosol deposition (AD) process, which enables the fabrication of high-density ceramic films at room temperature while preserving the distinct Curie temperatures (T_c) of different compositions. We prepared composite films with three PZT compositions: Pb(Zr_0.2Ti_0.8)O₃, Pb(Zr_0.52Ti_0.48)O₃, and Pb(Zr_0.8Ti_0.2)O₃. Compared to single-phase Pb(Zr_0.52Ti_0.48)O₃, the composite film exhibited a higher dielectric coefficient with reduced variation across a broad temperature range due to overlapping phase transitions. The AD-fabricated composite PZT films offer enhanced thermal stability, making them suitable for temperature-sensitive applications such as compact power electronics and portable devices. Full article

PZT thin films with a sol–gel-derived seed layer of Pb_1.2(Zr_0.3, Ti_0.7)O₃ were deposited on Pt/Ti/SiO₂/Si substrates via the magnetron sputtering process. The purpose of this present study was to investigate the influence of sputtering process parameters and heat treatment parameters on the crystal orientation, microstructure, and dielectric behaviors of PZT films. X-ray diffraction (XRD) analysis shows that the (100) orientation degree of the PZT films first increases and then decreases with the increase in oxygen partial pressure during sputtering. The PZT film annealed at a temperature of 550 °C exhibits a pure (100) perovskite phase. There are no significant changes in crystal orientation and the (100) orientation degree with increasing annealing time. An improved surface density, more uniform grains, and clear grain boundaries were detected by scanning electron microscope (SEM) characterization as the annealing time increased to 30 min. Optimal dielectricity was obtained in the film deposited on an O₂/Ar composition of 10/90 with a sputtering pressure of 2 Pa and annealed at 600 °C for 30 min, which presents a permittivity of 852 and a loss factor of 0.026 at a frequency of 1 kHz and a remanent polarization of 18.5 μC/cm². Full article

Flexible polymer-based piezoelectric nanogenerators (PENGs) have gained significant interest due to their ability to deliver clean and sustainable energy for self-powered electronics and wearable devices. Recently, the incorporation of fillers into the ferroelectric polymer matrix has been used to improve the relatively low piezoelectric properties of polymer-based PENGs. In this study, we investigated the effect of various nanofillers such as titania (TiO₂), zinc oxide (ZnO), reduced graphene oxide (rGO), and lead zirconate titanate (PZT) on the PENG performance of the nanocomposite thin films containing the nanofillers in poly(vinylidene fluoride-co-trifluoro ethylene) (P(VDF-TrFE)) matrix. The nanocomposite films were prepared by depositing molecularly thin films of P(VDF-TrFE) and nanofiller nanoparticles (NPs) spread at the air/water interface onto the indium tin oxide-coated polyethylene terephthalate (ITO-PET) substrate, and they were characterized by measuring their microstructures, crystallinity, β-phase contents, and piezoelectric coefficients (d₃₃) using SEM, FT-IR, XRD, and quasi-static meter, respectively. Multiple PENGs incorporating various nanofillers within the polymer matrix were developed by assembling thin film-coated substrates into a sandwich-like structure. Their piezoelectric properties, such as open-circuit output voltage (V_OC) and short-circuit current (I_SC), were analyzed. As a result, the PENG containing 4 wt% PZT, which was named P-PZT-4, showed the best performance of V_OC of 68.5 V with the d₃₃ value of 78.2 pC/N and β-phase content of 97%. The order of the maximum V_OC values for the PENGs of nanocomposite thin films containing various nanofillers was PZT (68.5 V) > rGO (64.0 V) > ZnO (50.9 V) > TiO₂ (48.1 V). When the best optimum PENG was integrated into a simple circuit comprising rectifiers and a capacitor, it demonstrated an excellent two-dimensional power density of 20.6 μW/cm² and an energy storage capacity of 531.4 μJ within 3 min. This piezoelectric performance of PENG with the optimized nanofiller type and content was found to be superior when it was compared with those in the literature. This PENG comprising nanocomposite thin film with optimized nanofiller type and content shows a potential application for a power source for low-powered electronics such as wearable devices. Full article

Developing lead zirconate titanate (PZT)-based electro-optic (EO) modulators is vital for integrated photonics. The high annealing temperature required for the processing of PZT thin films restricts their compatibility with modern complementary metal–oxide–semiconductor (CMOS) technology. In this work, high-quality PZT films were fabricated on SiO₂/Si substrates at a low annealing temperature of 450 °C. The PZT films demonstrated a preferential (100) orientation and were uniform and crack-free. Based on the low-temperature PZT films, we subsequently designed and fabricated a Mach–Zehnder Interferometer (MZI) waveguide modulator. The measured half-wave voltage (V_π) was 4.8 V at a wavelength of 1550 nm, corresponding to an in-device EO coefficient as high as 66 pm/V, which shows potential use in optical devices. The results reported in this work show great promise for the integration of PZT thin films with other complex systems. Full article

The aerosol deposition (AD) method utilizes high kinetic-energy submicron powders to impact and form a film on a substrate. It is a highly efficient deposition method, capable of producing films or coatings with a strong interfacial bonding and a dense nano-grain structure without thermal assistance. In this work, PbZr_0.53Ti_0.47O₃ (PZT53/47) films (~1.2 μm thick) were deposited on Pt/Ti/Si(100) substrates via the AD method. After a conventional annealing process (700 °C for 1 h), these PZT53/47 films displayed a dense, crack-free, nano-grained morphology, corresponding to an optimal electrical performance. A large maximum polarization (P_max = 70 μC/cm²) and a small coercive field (E_c = 104 kV/cm) were achieved under the maximum applicable electric field of 1.6 MV/cm. The PZT53/47 films also exhibited a large small-field dielectric constant of ~984, a high tunability of 72%, and a low leakage current of ~3.1 × 10⁻⁵ A/cm² @ 40 V. Moreover, the transverse piezoelectric coefficient (e_31.f) of these AD-processed films was as high as −4.6 C/m², comparable to those of sputter-deposited PZT53/47 films. These high-quality PZT53/47 thick films have broad applications in piezoelectric micro-electromechanical systems. Full article

One of the challenging problems in the research and development of vibration sensors relates to the formation of Ohmic contacts for the removal of an electrical signal. In some cases, it is proposed to use arrays of carbon nanotubes (CNTs), which can serve as highly elastic electrode materials for vibration sensors. The purpose of this work is to study the effect of a current-collecting layer of CNTs grown over silicon on the properties of a lead zirconate titanate (PZT) film, which is frequently employed in mechanical vibration sensors or energy harvesters. For the experiments, a vibration sensor mock-up was created with the PZT-CNT-Ni-V-SiO₂-Si and PZT-CNT-Ni-V-Si structures where an array of vertically oriented CNTs was grown over an oxidized or high-alloyed silicon substrates by plasma chemical deposition from a gas phase. Then, a thin film of PZT was applied to the CNT layer with a high-frequency reactive plasma spraying. For comparison, the PZT film was applied to silicon without a CNT layer (PZT-Si structure). The calculated average value of the piezoelectric module is 112 pm/V for the Ni-PZT-PT-Ni-Si-SiO₂ sample, and 35 pm/V for PZT-Ni-SiO₂-Si. It can be seen that the contact realized with the help of CNT ensures more than three times the best efficiency in terms of the piezoelectric module. The value of the piezoelectric module of the vibration sensor with the PZT-CNT-Ni-V-Si structure was 186 pm/V, and the value of the residual polarization was 23.2 µC/cm², which is more than eight and three times, respectively, higher than the values of these properties for the vibration sensor with the PZT-Si structure. It is shown that the vibration sensor can operate in the frequency range of 0.1–10 kHz. Full article