Search Results (211)

Reconfigurable antennas play a central role in next-generation wireless communication systems by enabling dynamic adaptation of operating frequency, radiation pattern, and polarization. Tunable metasurfaces have emerged as a powerful and compact approach to antenna reconfiguration, allowing electromagnetic wave manipulation through engineered, planar structures whose properties can be dynamically controlled. By embedding active devices or tunable materials within metasurface unit cells, antenna characteristics can be modified without altering the antenna geometry. This review provides a comprehensive overview of reconfigurable antennas enabled by tunable metasurfaces. We adopt a functionality-based classification that focuses on operating frequency, radiation pattern, polarization, and multifunction reconfiguration. An overview of major tunability technologies, including PIN diodes, varactors, MEMS, graphene and two-dimensional materials, and liquid crystal (LC) or phase-change materials, is first presented. Subsequently, metasurface-based reconfiguration strategies are discussed and compared for each antenna functionality, highlighting design principles, practical trade-offs, and limitations. The review concludes with an assessment of challenges and future research directions relevant to next-generation wireless communications and beyond. Full article

Dark current represents a fundamental limiting factor in photodiode performance, establishing the noise floor and constraining detectivity in low-light applications. This comprehensive literature review examines publications covering the physical mechanisms underlying dark current generation and diverse techniques employed for its reduction. Covered mechanisms include diffusion current, Shockley–Read–Hall (SRH) generation–recombination, trap-assisted tunneling, band-to-band tunneling, and surface leakage, each examined with respect to its physical origin and characteristic signatures. Reduction strategies are categorized into thermal management approaches, surface passivation techniques including atomic-layer-deposited aluminum oxide (ALD Al₂O₃), guard ring architectures (attached, floating, and combined configurations), gettering and defect engineering methods, doping profile optimization, bias voltage management, and advanced device architectures such as pinned photodiodes and black silicon structures. A classification table organizes all the reviewed literature by material system, reduction technique, and key findings. Special emphasis is placed on silicon, germanium, III–V compounds, and emerging material photodiodes relevant to near-infrared detection, CMOS imaging, single-photon avalanche diodes (SPADs), and Time-of-Flight (ToF) applications. Full article

A compact dual-polarized beam-steerable patch antennas with filtering characteristics is proposed in this paper. By digging two orthogonal coupling slots on the ground plate, dual polarization is achieved while ensuring the isolation between the ports. By constructing properly arranged parallel microstrip resonators and open-circuited stubs, the effect of suppressing a broad stopband is produced. The beam steering characteristic is accomplished through the integration of a driven patch antenna with two dual-element metallic walls, each incorporating PIN diodes for electronic tuning. A prototype antenna has been fabricated to substantiate the efficacy of the proposed methodology. The simulated and measured results agree well, demonstrating good performance in terms of impedance bandwidth, stopband suppression, isolation and beam-steering capability. Under six radiation states, the proposed antenna operates from 2.3 GHz to 2.5 GHz with isolation exceeding 20 dB. Additionally, the antenna gain remains below −10 dBi over the 2.6 GHz to 10 GHz band, achieving out-of-band suppression greater than 15.8 dB within the wide stopband. When port 1 is excited, the antenna generates three distinct radiation patterns, enabling beam scanning at 0° and ±30° in the yoz plane. Similarly, exciting port 2 yields three radiation patterns, allowing beam scanning at 0° and ±30° in the xoz plane. This work presents the first integration of dual-polarized, beam-steering, and filtering characteristics into a single compact antenna. Full article

We develop Cs_xFA_1−xPbI₃ perovskite photodetectors with varying Cs content in the x = 0.05–0.25 range to identify the most stable cubic-lattice perovskite composition for visible-light photodetection. The perovskite layers were deposited by the spin-coating technique on a nickel oxide p-type contact and then were covered with C₆₀/Ag electron contact to obtain a vertical pin diode structure. X-ray diffraction (XRD) and scanning electron microscopy (SEM) measurements show that x = 0.1–0.2 provides the most stable lattice and pinhole-free perovskite layers. The photocurrents are linear in an extremely wide 1 nW–10 mW excitation power range, providing photoresponsivity of 0.28 A/W at 532 nm (green light), similar to that of Si photodiodes. The testing of the photodetectors using picosecond pulses provided their rise times and fall times. The x = 0.2 composition provided the shortest rise time values of 27.5 ns, leading to a detector modulation bandwidth of 12.7 MHz. This indicates that this perovskite composition is suitable for replacing silicon photodetectors in cost-efficient light detection systems for imaging and light communication applications such as Li-Fi. Full article

This study investigates the electrical performance of two 4H-SiC p⁺-i-n⁻ diodes, based on lightly doped epitaxial layers, representative of high-voltage and neutron-detector structures. Each design was implemented in multiple nominally identical devices and characterized over the temperature range 298–623 K, with particular attention to the influence of p⁺ layer fabrication, n-type epitaxial layer thickness, and doping concentration. One diode features an ion-implanted p⁺ layer on a 250 µm thick n-type epitaxial layer, while the other employs an epitaxially grown p⁺ layer on a 100 µm thick n-type epitaxial layer. A comparison of reverse-bias Current–Voltage (I–V) and Capacitance–Voltage (C–V) characteristics indicates that, although both designs exhibit high-quality epitaxial 4H-SiC material, devices with an implanted p⁺ anode tend to show a more pronounced temperature-dependence and degradation of selected electrical parameters in reverse bias than those with an epitaxial p⁺ anode, while forward I–V in the range 298–623 K remains broadly similar for both designs. These observations suggest that anode fabrication and epitaxial design may jointly influence thermal stability, recombination mechanisms, and overall electrical performance, offering guidance for the optimization of 4H-SiC-based power and neutron-detector devices for high-temperature and harsh environments. Full article

This paper proposes a frequency-reconfigurable and active beam-switching antenna based on an X-shaped slot array integrated with a diode-based switching network. The proposed antenna features four slots arranged at 90° intervals around the feed point. Each slot is integrated with two PIN diodes and one varactor diode. By selectively activating a specific slot through the PIN diodes, the radiation pattern can be switched in four directions at 90° intervals. Dual-band operation is achieved using varactor diodes, and by controlling their equivalent capacitance, the antenna covers two operating bands: a low-frequency band with a 29.51% bandwidth (2.6–3.5 GHz) and a high-frequency band with a 24.52% bandwidth (3.65–4.67 GHz). These frequency ranges include the 5G sub-6 GHz bands, specifically n77 and n78. Experimental results confirm stable beam-switching performance across the entire operating frequency range. Full article

Hydrogenated amorphous silicon (a-Si:H) is a mature thin-film technology for large-area devices and thin-film sensors, and its low-temperature growth via Plasma-Enhanced Chemical Vapor Deposition (PECVD) makes it particularly suitable for biomedical flexible and wearable platforms. However, the reliable integration of a-Si:H sensors on polymer substrates requires a quantitative assessment of their electrical stability under mechanical stress, since bending-induced variations may affect sensor accuracy. In this work, we provide a quantitative, direction-dependent evaluation of the static-bending robustness of both single-doped a-Si:H layers and complete p-i-n junction stacks on polyimide (Kapton^®), thereby linking material-level strain sensitivity to device-level functionality. First, n- and p-doped a-Si:H layers were deposited on 50 µm thick Kapton^® and then structured as two-terminal thin-film resistors to enable resistivity extraction under bending conditions. Electrical measurements were performed on multiple samples, with the current path oriented either parallel (longitudinal) or perpendicular (transverse) to the bending axis, and resistance profiles were determined as a function of bending radius. While n-type layers exhibited limited and mostly gradual variations, p-type layers showed a stronger sensitivity to mechanical stress, with a critical-radius behavior under transverse bending and a more progressive evolution in the longitudinal one. This directional response identifies a practical bending condition under which doped layers, particularly p-type films, are more susceptible to strain-induced degradation. Subsequently, a linear array of a-Si:H p-i-n sensors was fabricated on Kapton^® substrates with two different thicknesses (25 and 50 µm thick) and characterized under identical bending conditions. Despite the increased strain sensitivity observed in the single-layers, the p-i-n diodes preserved their rectifying behavior down to the smallest radius tested. Indeed, across the investigated radii, the reverse current at −0.5 V remained consistent, confirming stable junction operation under bending. Only minor differences, related to substrate thickness, were observed in the reverse current and in the high-injection regime. Overall, these results demonstrate the mechanical robustness of stacked a-Si:H junctions on polyimide and support their use as sensors for wearable biosensing architectures. By establishing a quantitative, orientation-aware stability benchmark under static bending, this study supports the design of reliable a-Si:H flexible sensor platforms for curved and wearable surfaces. Full article

With the advent of electric vehicles, the demand for non-destructive inspection methods for battery evaluation has increased. Among various requirements, achieving high-frame-rate performance is particularly critical for rapid inspection in end-user systems. However, image delay, which increases with frame rate, has emerged as a significant challenge due to inherent limitations in sensor design. As a result, extensive research has been conducted to improve image lag performance. In this study, we conducted an in-depth analysis of the fundamental causes of image lag in image sensors. Based on these findings, we fabricated a novel sensor with a reset transistor separate from the readout transistor used for data transfer. This approach effectively increased the reset current of the photodiode, significantly reducing image lag. The transistor material used in this study was InGaZnO, which showed a significant improvement in image lag compared to conventional methods. By introducing a dedicated reset transistor, the allowable reset current of the PIN diode was increased by a factor of 100 compared to the ROIC-limited condition, resulting in a significant reduction in image lag from 3.8% (STS) to 0.9% (DTS) under high-frame-rate operation. This research provides a theoretical basis for proposing various new X-ray digital image sensor structures. Full article

With the widespread application of high-power thick-film-substrate light-emitting diode (LED) packages, the performance of high-power LED modules has been continuously improved, making thermal management an increasingly critical issue. To enhance the heat dissipation performance of LED modules, this study investigates the effects of different heat dissipation structures on the temperature field using a finite element-based thermal simulation method, based on the thermal management enhancement characteristics of the LED. A thermal simulation model of the LED was established, and the thermal characteristics and temperature field characterization of its components were analyzed. Our results revealed significant temperature differences at various positions of the LED, particularly near the bottom surface of the heat sink and the contact surface with the LED chips, where the heat flux density exhibited notable variations. Properly adjusting the spacing between LEDs effectively reduced the maximum temperature of the module, with the optimal spacing determined to be approximately 19 mm. To further improve heat dissipation, pin-fin arrays were added to the heat sink, leading to a reduction of 8.79 K in the maximum temperature and 9.67 K in the minimum temperature of the LED module, which significantly enhanced the heat dissipation performance. The optimization measures effectively improved the temperature field characterization of the LED, contributing to enhanced performance and an extended lifespan of the LED module. Full article

This paper presents a waveguide energy-selective device operating in the Ku band. By utilizing the nonlinear characteristics of PIN diodes, the device can autonomously switch its operating state according to the power level of incident signals inside the waveguide, achieving an adaptive transmission response. Concurrently, through a dual-layer structural design and optimized inter-layer coupling, it enables the device to deliver broadband-protective performance within the Ku band. To validate its feasibility, the device was designed and implemented based on the waveguide WR62. The results indicate that during the transmission of a −10 dBm signal, the device exhibits insertion loss fluctuating around 1 dB within the 13–17 GHz band, whereas under 45 dBm signal incidence, the shielding effectiveness exceeds 10 dB across this frequency range. The device can be integrated into waveguides to provide adaptive high-power protection, thus demonstrating significant application potential in the field of electromagnetic protection for sensitive electronic equipment. Full article

A novel wideband 1-bit reconfigurable transmitarray (RTA) is proposed, which is based on a substrate-integrated cavity-backed patch (SCIBP) element. The RTA element consists of a pair of SCIBP antennas, achieving wideband operational capability through the optimization of dielectric substrate thickness. To suppress surface-wave propagation between adjacent RTA elements, a substrate-integrated waveguide (SIW) is designed to function as a metallic isolation wall. A 180° phase shift is realized by dynamically manipulating p-i-n diodes embedded within the SCIBP antenna structure. When the dielectric substrate thickness is increased from 6 mm to 10 mm, the 3 dB transmission bandwidth is expanded from 10% to 33.6%. The simulation results confirm that the proposed element realizes a 3 dB transmission bandwidth of 33.6%. A prototype RTA with 100 elements is designed, fabricated, and measured. The prototype achieves a peak gain of 16.6 dBi at 4.6 GHz, accompanied by an aperture efficiency of 17.2% and a 3 dB gain bandwidth of 18.9%. Furthermore, measured scanned beams illustrate that the proposed RTA possesses good beamscanning performance. Owing to its many advantages, such as wideband operation, lightweight design, low cost, simple structure, and easy fabrication, it is particularly suitable for application in intelligent communication systems and radar systems. Full article

Cesium lead chloride (CsPbCl₃) is a stable, wide-bandgap perovskite with significant potential for ultraviolet (UV) photodetection and blue light-emitting diodes (LEDs). However, the dynamical mechanisms of ferroelastic domain walls associated with the dielectric relaxations in a single-crystal have rarely been reported. In this work, we observed reversible phase transitions from cubic to tetragonal, and further to orthorhombic symmetry, accompanied by the formation and evolution of strip-like ferroelastic domain walls, using in situ X-ray diffraction (XRD), differential scanning calorimetry (DSC), polarized optical microscopy (POM), and dielectric measurements. Notably, the dielectric studies revealed low temperature (~170–180 K) frequency-dependent loss peaks that we attribute to the pinning of polarized domain walls by chloride vacancies. We also found that the formation or disappearance of ferroelastic domain walls near the octahedral tilting transition temperatures leads to pronounced anomalies in the dielectric permittivity. These findings clarify the intrinsic phase behavior of CsPbCl₃ single crystals and underscore the significant contribution of ferroelastic domain walls to its dielectric response, providing insights for optimizing its optoelectronic performance. Full article

This article presents a comprehensive and intuitive analysis of the impact of packaging on diode performance and a two-step method for packaging parameter extraction. This is performed using a single forward bias point, one-port measurements and probe tips on a conventional printed circuit board (PCB). A PIN diode was used to validate the method, biased from reverse (−5 V) to forward (1.22 V) bias. Measurements were performed up to 27 gigahertz (GHz). The complete diode characterization process—from the design and the electrical modeling of the test fixture to the extraction of the unpackaged diode measurements—is detailed. The parameters of the package model were extracted, its effects were removed from the measurement, and the behavior of the unpackaged diode was determined. Three operating regions based on their radiofrequency and direct current (RF-DC) behavior were proposed, and an electrical model of the unpackaged diode was derived for each region. The results showed that the influence of the package caused the diode to remain in an unchanged behavior under different biases, indicating that it no longer rectified. The results presented herein are validated by the excellent correlation between the diode’s measured S-parameters, impedance, and admittance and their corresponding models. Full article

A Si/SiC heterojunction double-trench MOSFET with improved conduction characteristics is proposed. By replacing the N+ source and P-ch regions with silicon, the device forms a Si/SiC heterojunction that exhibits Schottky-like characteristics, effectively deactivating the parasitic PiN body diode and improving third-quadrant performance. A high-k gate dielectric is incorporated to induce a strong electron accumulation layer at the heterointerface, thinning the energy barrier and enabling tunneling-dominated current transport, thereby significantly enhancing the first-quadrant performance. TCAD simulation results demonstrate that the proposed device achieves a specific on-resistance (R_on,sp) of 1.78 mΩ·cm², representing a 20.5% reduction compared to the conventional SiC DTMOS, while maintaining a comparable breakdown voltage (BV) of approximately 1380 V. A significant reduction in the third-quadrant turn-on voltage (V_on) is achieved with the proposed structure, from 2.74 V to 1.53 V. Meanwhile, the unipolar conduction mechanism similar to that of Schottky effectively suppresses bipolar degradation. To enhance device reliability, the design incorporates a trenched source and heavily doped P-well, which collectively mitigate high electric field concentrations at the trench corners. The proposed device offers an integration strategy enhancing both forward conduction and reverse conduction in high-voltage power electronics. Full article

This paper provides a comprehensive review of recent advancements in radio-frequency (RF) multifunctional components with integrated filtering characteristics, including tunable filtering attenuators, filtering power dividers, filtering couplers, and filtering Butler matrices, all of which play critical roles in wireless communication systems. With the increasing demand for miniaturization, integration, and low-loss performance in RF front-ends, multifunctional components with filtering characteristics have become essential. This review first introduces tunable attenuators and filtering attenuators based on various technologies such as PIN diodes, graphene-based structures, and RF-MEMS switches, and also analyzes their advantages, limitations, and performance. Then, we discuss filtering power dividers developed from Wilkinson structures, three-line coupled structures, resonator-based coupling matrix methods, and SSPP-waveguide hybrids. Furthermore, filtering couplers and filtering Butler matrices are reviewed, highlighting their capability to simultaneously achieve amplitude and phase control, making them suitable for multi-beam antenna feeding networks. Finally, a brief conclusion is summarized. Future research directions, such as hybrid technologies, novel materials, broadband and multi-band designs, and antenna-matrix co-design, are suggested to further enhance the performance and practicality of multifunctional RF components for next-generation wireless communication systems. Full article