Perovskite Nanostructured Materials for Next-Generation Light-Emitting Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 30 June 2026 | Viewed by 968

Special Issue Editors

College of Optical Science and Engineering, Zhejiang University, Hangzhou, China
Interests: novel semiconductor lasers and silicon-based integration; perovskite and quantum dot luminescent materials and display
College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, China
Interests: perovskite materials and devices; phase transitions; domain wall engineering
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Special Issue Information

Dear Colleagues,

Perovskite light-emitting materials have undergone rapid advancement since their breakthrough in high-efficiency electroluminescence back in 2014. The diverse crystal forms (single crystals, polycrystalline bulk films, and colloidal nanocrystals) underpin their broad research potential. Moreover, their tunable bandgaps, high photoluminescence quantum yields (PLQY), and low-cost fabrication routes well address the demands for next-generation displays, lasers, and X-ray scintillators. Yet critical challenges remain, such as poor operational stability, severe device efficiency roll-off, and hurdles in scalable device integration, which continue to impede their further commercialization.

This Special Issue aims to showcase progress in perovskite light-emitting and nanostructured materials, bridging material design, performance optimization, and advanced device applications while highlighting solutions to unresolved bottlenecks. Current frontiers include, but are not limited to, the following: interface engineering and defect passivation strategies for long-term operational stability; innovations in device architecture; integration of perovskite emitters into micro-LEDs or miniaturized lasers; and theoretical modeling to unravel luminescence mechanisms.

We welcome original research, reviews, and perspectives addressing, but not limited to, the following themes:

  • Synthesis/characterization of high-performance perovskite light-emitting and nanostructured materials;
  • Fabrication of LEDs, lasers, X-ray scintillators, and circularly polarized light sources;
  • Stability/efficiency enhancement and emission regulation strategies;
  • Theoretical/computational studies of luminescence mechanisms.

Dr. Chen Zou
Dr. Dexin Yang
Guest Editors

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Keywords

  • halide perovskites
  • nanostructures
  • light-emitting diodes
  • lasers
  • X-ray scintillators
  • circularly polarized luminescence
  • luminescence mechanisms
  • lightning and display
  • scalable device integration

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Published Papers (1 paper)

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Research

11 pages, 5555 KB  
Article
Dynamics of Ferroelastic Domain Walls Associated with the Dielectric Relaxation in CsPbCl3 Single Crystals
by Zijun Yu, Chen Zou and Dexin Yang
Nanomaterials 2026, 16(1), 57; https://doi.org/10.3390/nano16010057 - 31 Dec 2025
Cited by 1 | Viewed by 667
Abstract
Cesium lead chloride (CsPbCl3) is a stable, wide-bandgap perovskite with significant potential for ultraviolet (UV) photodetection and blue light-emitting diodes (LEDs). However, the dynamical mechanisms of ferroelastic domain walls associated with the dielectric relaxations in a single-crystal have rarely been reported. [...] Read more.
Cesium lead chloride (CsPbCl3) is a stable, wide-bandgap perovskite with significant potential for ultraviolet (UV) photodetection and blue light-emitting diodes (LEDs). However, the dynamical mechanisms of ferroelastic domain walls associated with the dielectric relaxations in a single-crystal have rarely been reported. In this work, we observed reversible phase transitions from cubic to tetragonal, and further to orthorhombic symmetry, accompanied by the formation and evolution of strip-like ferroelastic domain walls, using in situ X-ray diffraction (XRD), differential scanning calorimetry (DSC), polarized optical microscopy (POM), and dielectric measurements. Notably, the dielectric studies revealed low temperature (~170–180 K) frequency-dependent loss peaks that we attribute to the pinning of polarized domain walls by chloride vacancies. We also found that the formation or disappearance of ferroelastic domain walls near the octahedral tilting transition temperatures leads to pronounced anomalies in the dielectric permittivity. These findings clarify the intrinsic phase behavior of CsPbCl3 single crystals and underscore the significant contribution of ferroelastic domain walls to its dielectric response, providing insights for optimizing its optoelectronic performance. Full article
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