Integrated Circuit Research for Nanoscale Field-Effect Transistors: 2nd Edition
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: closed (24 October 2025) | Viewed by 1238
Special Issue Editor
Interests: optoelectronic properties of group IV devices; silicon photonics
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
This is the second edition of the previous Special Issue, “Integrated Circuit Research for Nanoscale Field-Effect Transistors”.
As the channel size of field-effect transistors (FETs) shrinks to the nanometre scale, there is increasing demand for atomic-layer materials to minimize the effects of short channels under extreme scaling. Since the proposal of graphene, the first monolayer of graphite, many researchers have developed novel nanomaterials, such as two-dimensional chalcogenides and single-element two-dimensional materials, on FET devices. These FETs, fabricated using nanomaterials, have become a hot research topic, and researchers are committed to improving their performance and expanding their circuit applications.
To draw more attention to this research field, this Special Issue will comprehensively discuss progress in FET device applications. Potential topics include, but are not limited to, nanomaterials in FET devices and the preparation, circuit design, and application of nano-FET devices. We invite authors to contribute original research and review articles covering the latest developments in aspects such as nanomaterial-based devices, sub-reliability, and material stability.
There are many issues related to the design, fabrication, and application of advanced field-effect transistors. It is my pleasure to invite you to share your expertise in this Special Issue. Full papers, communications, and reviews are all welcome.
Prof. Dr. Huiyong Hu
Guest Editor
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Keywords
- FETs
- nanomaterials
- nanointegrated circuits
- nano-semiconductor device
- channel effect
- simulation
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