III-Nitride Semiconductors: Design, Characterization, Applications and Devices (Second Edition)
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: 10 December 2026 | Viewed by 991
Special Issue Editor
Interests: III-Nitride semiconductor material and devices
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
GaN-based materials include GaN, InN, AlN, and their alloys, with their spectra covering ultraviolet, visible, and infrared wavelengths, rendering them ideal materials for the preparation of light-emitting devices. In recent years, III-nitride semiconductors have become a strategic hotspot and the subject of a high level of global technological competition. Based on III-nitride semiconductor materials, semiconductor lighting has emerged as the focus of a large-scale industry, with its ongoing development in the field of electronic power devices representing a key area.
This Special Issue seeks to showcase research papers and review articles on materials and devices based on group-III-nitride semiconductors. We welcome contributions devoted to epitaxial growth, optical and electrical properties, structural analysis, defect characterization, light-emitting devices (UV/VIS-LEDs, lasers, and µLEDs), photovoltaics, energy harvesting, photodetectors, transistors, power and RF applications, device processing and fabrication, transport, and switching properties.
We look forward to receiving your submissions.
Dr. Jing Yang
Guest Editor
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Keywords
- III-nitride semiconductor epitaxial growth
- laser diodes
- light-emitting diodes
- photodetectors, transistors
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