Special Issue "Nano Devices and Nano Sensors"

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: 31 January 2021.

Special Issue Editors

Prof. Dr. J. Daniel Prades
Website
Guest Editor
Department of Electronic and Biomedical Engineering, Universitat de Barcelona, Spain
Interests: nano devices engineering; chemical sensors; low power devices
Special Issues and Collections in MDPI journals
Dr. Gerhard Müller
Website
Guest Editor
Department of Applied Sciences and Mechatronics,Munich University of Applied Sciences, D-80335 Munich, Germany.
Interests: nano materials; nano devices; MEMS; sensors; sensor applications
Special Issues and Collections in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor nanostructures with 1D and 2D morphologies have attracted a great deal of interest in many fields of application. Whereas, early on, 2D heterostructure transistors have been investigated as efficient transducers for detecting physical, chemical, and biological signals, interest more recently has moved toward nanowires and nanorods with essentially 1D morphology. Such structures feature excellent crystallinity, good transport properties, and photoluminescence, which has allowed for interesting applications in opto-electronics and in photonic crystal technologies. Due to reactive surfaces and extremely high surface to volume ratios, 1D nanostructures have also been increasingly employed in the fields of gas and chemical sensors. While earlier work in this area has greatly contributed to the development of gas sensors with ultra-low-power consumption, capable of autonomous operation using micro-power scavenging techniques, 1D nanostructures, more recently, have been employed in the studies of surface adsorption processes, surface catalysis, and photo-electrochemical power conversion.

In view of this situation, you are invited to submit contributions that are devoted to the synthesis and study of innovative kinds of nanomaterials, particularly with a focus on enabling novel device concepts and demonstrating novel kinds of applications. Contributions are encouraged but not limited to existing and emerging fields of applications like chemical, gas, and biological sensing, optoelectronics, power-efficient devices, and energy applications.

Accepted papers are published in the joint Special Issue in Nanomaterials or Inventions (https://www.mdpi.com/journal/inventions/special_issues/Devices_sensor)

Prof. Dr. J. Daniel Prades
Dr. Gerhard Müller
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Metal oxide semiconductors
  • III-nitride materials
  • Carbon-based materials
  • 1D- and 2D-semiconductor structures
  • Active surface centers
  • Solid-gas interaction
  • Solid-liquid interaction
  • In situ and operando investigations
  • Novel device concepts
  • Novel applications

Published Papers (1 paper)

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Research

Open AccessArticle
The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm
Nanomaterials 2020, 10(5), 1006; https://doi.org/10.3390/nano10051006 - 25 May 2020
Abstract
The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). [...] Read more.
The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers. Full article
(This article belongs to the Special Issue Nano Devices and Nano Sensors)
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