Nanostructure ITO and Get More of It. Better Performance at Lower Cost
Abstract
:1. Introduction
2. Growth of ITO Nanowires. Characteristics and Dependences
2.1. Sample Preparation
2.2. Growth Dependence with the Substrate Temperature, Deposition Time and Sn Concentration
2.2.1. Growth Dependence with Substrate Temperature
2.2.2. Growth Dependence with Deposition Time
2.2.3. Growth Dependence with SnO2 Concentration
3. Characterization by Cyclic Voltammetry, Conductivity and Transmittance of ITO Nanowires at Different Growth Parameters
3.1. Dependence of the Surface Area, Conductivity and Transmitance with Substrate Temperature
3.2. Dependence of the Surface Area, Conductivity and Transmitance with Deposition Time
3.3. Dependence of the Surface Area on Sn Concentration
4. Electrochemical Characterization of the Functionalized Surface. Analysis of the Behavior of the Nanostructured vs Thin-Film ITO Working Electrodes
5. Discussion
6. Conclusions
Supplementary Materials
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Temperature (°C) | 100 | 200 | 300 | 400 | 500 |
---|---|---|---|---|---|
Mean Nanowire Diameter (nm) | No NW | 33.56 | 34.98 | 36.29 | 40.91 |
STDV Diameter (nm) | 2.266 | 2.955 | 3.736 | 6.439 | |
Mean Length (nm) | No NW | 72.23 | 124.6 | 135 | 457.95 |
STDV Length (nm) | 13.13 | 21.95 | 32.01 | 135.8 | |
Number of Nanowires/Area Unit | - | 433 nw/µm2 | 610 nw/µm2 | 625 nw/µm2 | 616 nw/µm2 |
Nanowire Area vs. Total Area | - | 77.7% | 95.4% | 97.8% | 96.66% |
Mean Distance Between Nanowires (nm) | - | 0.24 | In contact | In contact | In contact |
Exposed Time (min) | Mean Length (nm) | STDV Length (nm) | Mean Diameter (nm) | STDV Diameter (nm) |
---|---|---|---|---|
10 | 86.98 | 19.62 | 19.95 | 2.139 |
12 | 123.7 | 39.08 | 19.7 | 2.735 |
14 | 153 | 28.19 | 22.59 | 5.783 |
15 | 211 | 58.72 | 24.71 | 4.331 |
20 | 233.1 | 44.59 | 24.95 | 3.715 |
25 | 365.7 | 101.3 | 28.03 | 7.322 |
30 | 439.4 | 77.5 | 31.23 | 10.231 |
Sample (°C) | Area (cm2) | Transmittance (%) @600 nm | Sheet Resistance (Ω/sq) |
---|---|---|---|
200 | 0.31 | 79 | 215 |
300 | 0.42 | 82 | 105 |
400 | 0.38 | 81 | 155 |
500 | 0.40 | 82 | 145 |
Composition In/Sn wt.% | Active Area (cm2) |
---|---|
90/10 | 0.623 ± 0.017 |
80/20 | 0.273 ± 0.012 |
70/30 | 0.1 ± 0.012 |
60/40 | Not detected |
Thin film (reference) | 0.029 ± 0.004 |
O1s Peak (%) | Si2p Peak (%) | O Peak1 Position (eV) | O Std. Dev.1 (eV) | O Peak2 Position (eV) | O Std. Dev. 2 (eV) | Si Peak Position (eV) | Si Std. Dev. (eV) | |
---|---|---|---|---|---|---|---|---|
Bare ITO | 51 | 0.5 | 531.2 | 1.70 | 530 | 0.84 | 101.3 | 1 |
GOPTS Func. ITO | 58.1 | 7 | 532.4 | 1.35 | 530.1 | 0.97 | 102.4 | 1.21 |
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López, M.; Frieiro, J.L.; Nuez-Martínez, M.; Pedemonte, M.; Palacio, F.; Teixidor, F. Nanostructure ITO and Get More of It. Better Performance at Lower Cost. Nanomaterials 2020, 10, 1974. https://doi.org/10.3390/nano10101974
López M, Frieiro JL, Nuez-Martínez M, Pedemonte M, Palacio F, Teixidor F. Nanostructure ITO and Get More of It. Better Performance at Lower Cost. Nanomaterials. 2020; 10(10):1974. https://doi.org/10.3390/nano10101974
Chicago/Turabian StyleLópez, Manel, Juan Luis Frieiro, Miquel Nuez-Martínez, Martí Pedemonte, Francisco Palacio, and Francesc Teixidor. 2020. "Nanostructure ITO and Get More of It. Better Performance at Lower Cost" Nanomaterials 10, no. 10: 1974. https://doi.org/10.3390/nano10101974