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Article

Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator

1
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China
2
School of Computer Science and Technology, Tiangong University, Tianjin 300387, China
3
Tianjin Textile Fiber Inspection Institute, Tianjin 300192, China
4
Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Institute of Modern Optics, Nankai University, Tianjin 300071, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2020, 10(9), 1683; https://doi.org/10.3390/nano10091683
Received: 30 July 2020 / Revised: 20 August 2020 / Accepted: 20 August 2020 / Published: 27 August 2020
(This article belongs to the Special Issue Nano Devices and Nano Sensors)
We report a vertically coupled germanium (Ge) waveguide detector integrated on silicon-on-insulator waveguides and an optimized device structure through the analysis of the optical field distribution and absorption efficiency of the device. The photodetector we designed is manufactured by IMEC, and the tests show that the device has good performance. This study theoretically and experimentally explains the structure of Ge PIN and the effect of the photodetector (PD) waveguide parameters on the performance of the device. Simulation and optimization of waveguide detectors with different structures are carried out. The device’s structure, quantum efficiency, spectral response, response current, changes with incident light strength, and dark current of PIN-type Ge waveguide detector are calculated. The test results show that approximately 90% of the light is absorbed by a Ge waveguide with 20 μm Ge length and 500 nm Ge thickness. The quantum efficiency of the PD can reach 90.63%. Under the reverse bias of 1 V, 2 V and 3 V, the detector’s average responsiveness in C-band reached 1.02 A/W, 1.09 A/W and 1.16 A/W and the response time is 200 ns. The dark current is only 3.7 nA at the reverse bias voltage of −1 V. The proposed silicon-based Ge PIN PD is beneficial to the integration of the detector array for photonic integrated arrayed waveguide grating (AWG)-based fiber Bragg grating (FBG) interrogators. View Full-Text
Keywords: photodetector; germanium; PIN; silicon photonics photodetector; germanium; PIN; silicon photonics
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MDPI and ACS Style

Li, H.; Zhang, S.; Zhang, Z.; Zuo, S.; Zhang, S.; Sun, Y.; Zhao, D.; Zhang, Z. Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator. Nanomaterials 2020, 10, 1683. https://doi.org/10.3390/nano10091683

AMA Style

Li H, Zhang S, Zhang Z, Zuo S, Zhang S, Sun Y, Zhao D, Zhang Z. Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator. Nanomaterials. 2020; 10(9):1683. https://doi.org/10.3390/nano10091683

Chicago/Turabian Style

Li, Hongqiang, Sai Zhang, Zhen Zhang, Shasha Zuo, Shanshan Zhang, Yaqiang Sun, Ding Zhao, and Zanyun Zhang. 2020. "Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator" Nanomaterials 10, no. 9: 1683. https://doi.org/10.3390/nano10091683

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