Special Issue "Novel Ultra Wide Bandgap Power Devices and Materials"

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E:Engineering and Technology".

Deadline for manuscript submissions: closed (30 April 2021).

Special Issue Editor

Dr. Hiu-Yung Wong
E-Mail Website
Guest Editor
Department of Electrical Engineering, San José State University, San José, CA 95192, USA
Interests: (ultra)-wide bandgap; TCAD; cryogenic electronics; neuromorphic; machine learning

Special Issue Information

Ultra-wide bandgap (UWBG) devices are attracting increasing attention due to their potentially higher ruggedness in power electronics applications and harsh environments. Promising UWBG materials include but are not limited to gallium oxide (Ga2O3), diamond, aluminum nitride (AlN), and boron nitride (BN). Due to their ultra-wide bandgaps (>3.5eV), they are expected to have higher breakdown voltages and to be more immune to failure in radiative and highly temperate environments. However, due to the large bandgaps, shallow dopants are rare. Therefore, novel devices are required to fully unfurl their power. Examples of novel devices include Ga2O3 junctionless devices, devices with special edge termination structures such as Ar implant, NiO/Ga2O3 p-n diode, diamonds with surface hydrogen passivation, and AlyGa1-yN/AlxGa1-xN heterostructure using 2DEG for conduction. Since UWBG materials are still in their nascent stage, innovative growth techniques are critical to reducing the device cost for commercial use. Ab initio simulations are also critical to understanding and predicting material properties. TCAD simulations are useful as a cost-effective way to study novel device structures. Therefore, this Special Issue seeks to showcase research papers and review articles that focus on novel UWBG power device and material development through experimental and theoretical studies. Studies of UWBG power device and circuit interaction and co-optimization are also highly sought after.

Dr. Hiu-Yung Wong
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • ultra-wide bandgap
  • diamond
  • aluminum nitride
  • gallium oxide
  • boron nitride

Published Papers

There is no accepted submissions to this special issue at this moment.
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