Microelectronic Devices: Physics, Design and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: 30 November 2024 | Viewed by 374

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Guest Editor
The College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Interests: power device and integration; organic semiconductors; semiconductor device physics

Special Issue Information

Dear Colleagues,

With the aggressive scaling of CMOS technologies and constantly emerging diversified devices, semiconductor device modeling and designing techniques pose severe challenges to circuit and system designers, especially for RF/MW/mmW/THz/Power/optics. In particular, emerging semiconductor devices based on wide-band semiconductors or carbon-based semiconductors are leading devices in semiconductor physics and fabrication technologies. The Special Issue aims to strengthen communications among experts in the field, providing a forum for the presentation and discussion of leading-edge research and development results in analytical modeling, emerging devices, fabrication, and integration techniques for advanced devices, circuits, and technologies. Modeling and validation techniques of all solid-state devices, including, Si, III-V, power, nanoscale electronic structures, and other related new devices, are within the scope of this Special Issue. Accordingly, this Special Issue seeks to showcase research papers, communications, and review articles focusing on novel methodological developments in micro- and nano-scale semiconductor devices.

We look forward to receiving your submissions!

Prof. Dr. Jun Zhang
Guest Editor

Manuscript Submission Information

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  • micro-nanoelectronics
  • emerging semiconductor devices
  • wide-band semiconductor
  • emerging fabrication techniques

Published Papers (1 paper)

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13 pages, 5896 KiB  
A Novel 4H-SiC Asymmetric MOSFET with Step Trench
by Zhong Lan, Yangjie Ou, Xiarong Hu and Dong Liu
Micromachines 2024, 15(6), 724; https://doi.org/10.3390/mi15060724 - 30 May 2024
Viewed by 223
In this article, a silicon carbide (SiC) asymmetric MOSFET with a step trench (AST-MOS) is proposed and investigated. The AST-MOS features a step trench with an extra electron current path on one side, thereby increasing the channel density of the device. A thick [...] Read more.
In this article, a silicon carbide (SiC) asymmetric MOSFET with a step trench (AST-MOS) is proposed and investigated. The AST-MOS features a step trench with an extra electron current path on one side, thereby increasing the channel density of the device. A thick oxide layer is also employed at the bottom of the step trench, which is used as a new voltage-withstanding region. Furthermore, the ratio of the gate-to-drain capacitance (Cgd) to the gate-to-source capacitance (Cgs) is significantly reduced in the AST-MOS. As a result, the AST-MOS compared with the double-trench MOSFET (DT-MOS) and deep double-trench MOSFET (DDT-MOS), is demonstrated to have an increase of 200 V and 50 V in the breakdown voltage (BV), decreases of 21.8% and 10% in the specific on-resistance (Ron,sp), a reduction of about 1 V in the induced crosstalk voltage, and lower switching loss. Additionally, the trade-off between the resistance of the JFET region (RJFET) and the electric field in the gate oxide (Eox) is studied for a step trench and a deep trench. The improved performances suggest that a step trench is a competitive option in advanced device design. Full article
(This article belongs to the Special Issue Microelectronic Devices: Physics, Design and Applications)
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