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Micromachines
Special Issues
Perovskite Materials and Devices: Past, Present and Future
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Perovskite Materials and Devices: Past, Present and Future

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: closed (15 September 2023) | Viewed by 6048

Special Issue Editor

Dr. Zhenwei Ren

E-Mail Website
Guest Editor
School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
Interests: the design and synthesis of nanocrystals; perovskites and metal oxides and their application in light-emitting diodes; photodetectors and solar cells
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Conventional perovskite is a kind of microcrystalline material with a three-dimensional structure developed based on the natural mineral calcium titanate (CaTiO3). Recently, the conventional perovskite derivatives of metal halide perovskites have drawn tremendous attention in the preparation of high-performance optoelectronic devices, such as photovoltaics, light-emitting diodes (LEDs), photodetectors, lasers and so on, benefitting from outstanding optical and electrical properties, such as tunable bandgap, high photoluminescence quantum yield (PLQY), long carrier diffusion length, high charge mobility and good solution processability. Great achievements have been made in perovskite photovoltaics and LEDs with high photon-to-current and/or current-to-photon conversion efficiency approaching the theoretical limit. Further, substantial efforts are being made to improve the operational stabilities of perovskite photovoltaics and LEDs for future practical applications, while there is also a concern that the high device performances are mainly achieved with lead-based perovskites. New lead-free perovskites with excellent optoelectronic properties are highly desired. It is believed that high-performance, low-cost and eco-friendly perovskite and devices will be developed in future research.

Dr. Zhenwei Ren
Guest Editor

Manuscript Submission Information

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Keywords

  • perovskite material synthesis
  • perovskite nanocrystals
  • two-dimensional/quasi-two-dimensional perovskites
  • three-dimensional perovskites
  • lead-free perovskites
  • perovskite photovoltaics
  • perovskite light-emitting diodes
  • perovskite photodetectors
  • perovskite lasers
  • perovskite optical, electrical, and thermal properties
  • hybrid perovskites
  • new perovskite materials
  • new perovskite device structures

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Published Papers (2 papers)

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Research

12 pages, 4388 KiB  
Article
A Comprehensive Study of CsSnI3-Based Perovskite Solar Cells with Different Hole Transporting Layers and Back Contacts
by Seyedeh Mozhgan Seyed-Talebi, Mehrnaz Mahmoudi and Chih-Hao Lee
Micromachines 2023, 14(8), 1562; https://doi.org/10.3390/mi14081562 - 6 Aug 2023
Cited by 23 | Viewed by 3258
Abstract
By an abrupt rise in the power conservation efficiency (PCE) of perovskite solar cells (PSCs) within a short span of time, the instability and toxicity of lead were raised as major hurdles in the path toward their commercialization. The usage of an inorganic [...] Read more.
By an abrupt rise in the power conservation efficiency (PCE) of perovskite solar cells (PSCs) within a short span of time, the instability and toxicity of lead were raised as major hurdles in the path toward their commercialization. The usage of an inorganic lead-free CsSnI3-based halide perovskite offers the advantages of enhancing the stability and degradation resistance of devices, reducing the cost of devices, and minimizing the recombination of generated carriers. The simulated standard device using a 1D simulator like solar cell capacitance simulator (SCAPS) with Spiro-OMeTAD hole transporting layer (HTL) at perovskite thickness of 330 nm is in good agreement with the previous experimental result (12.96%). By changing the perovskite thickness and work operating temperature, the maximum efficiency of 18.15% is calculated for standard devices at a perovskite thickness of 800 nm. Then, the effects of replacement of Spiro-OMeTAD with other HTLs including Cu2O, CuI, CuSCN, CuSbS2, Cu2ZnSnSe4, CBTS, CuO, MoS2, MoOx, MoO3, PTAA, P3HT, and PEDOT:PSS on photovoltaic characteristics were calculated. The device with Cu2ZnSnSe4 hole transport in the same condition shows the highest efficiency of 21.63%. The back contact also changed by considering different metals such as Ag, Cu, Fe, C, Au, W, Ni, Pd, Pt, and Se. The outcomes provide valuable insights into the efficiency improvement of CsSnI3-based PSCs by Spiro-OMeTAD substitution with other HTLs, and back-contact modification upon the comprehensive analysis of 120 devices with different configurations. Full article
(This article belongs to the Special Issue Perovskite Materials and Devices: Past, Present and Future)
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13 pages, 2717 KiB  
Article
High-Efficiency CsPbBr3 Light-Emitting Diodes using One-Step Spin-Coating In Situ Dynamic Thermal Crystallization
by Buyue Zhang, Chen Chen and Xinyu Chen
Micromachines 2023, 14(6), 1104; https://doi.org/10.3390/mi14061104 - 24 May 2023
Cited by 1 | Viewed by 2206
Abstract
All-inorganic perovskite materials (such as CsPbBr3) have received widespread attention because of their better stability than hybrid counterparts, but their poor film morphology and crystalline quality limit their application in perovskite light-emitting devices (PeLEDs). Some previous studies have attempted to improve [...] Read more.
All-inorganic perovskite materials (such as CsPbBr3) have received widespread attention because of their better stability than hybrid counterparts, but their poor film morphology and crystalline quality limit their application in perovskite light-emitting devices (PeLEDs). Some previous studies have attempted to improve the morphology and crystalline quality of perovskite films by heating the substrate, but there are still some problems such as inaccurate temperature control, excessive temperature is not conducive to flexible applications, and the mechanism of action is not clear. In this work, we used a one-step spin-coating, low-temperature in situ thermally assisted crystallization process, in which the temperature was accurately monitored using a thermocouple in the range of 23–80 °C, and explored the effect of the in situ thermally assisted crystallization temperature on the crystallization of the all-inorganic perovskite material CsPbBr3 and the performance of PeLEDs. In addition, we focused on the influence mechanism for the in situ thermally assisted crystallization process on the surface morphology and phase composition of the perovskite films and promote its possible application in inkjet printing and scratch coating methods. Full article
(This article belongs to the Special Issue Perovskite Materials and Devices: Past, Present and Future)
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