Research Progress of Silicon-Based Photodetectors
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".
Deadline for manuscript submissions: 30 November 2025 | Viewed by 29
Special Issue Editor
Special Issue Information
Dear Colleagues,
Silicon-based photodetectors, leveraging silicon’s CMOS compatibility, cost efficiency, and scalability, are integral to modern optoelectronic systems, and this Special Issue seeks to compile cutting-edge advancements in materials, architectures, and integration strategies that address silicon’s inherent limitations, such as bandgap constraints and noise susceptibility. By bridging material science, device physics, and systems engineering, this collection will underscore silicon’s enduring potential to drive next-generation photodetection technologies, offering a roadmap for high-performance, multifunctional, and cost-effective solutions across industrial and scientific domains. This Special Issue seeks to showcase research papers, short communications and review articles that focus on: (1) innovations in nanostructured silicon and hybrid heterojunctions that could enhance the performance of photodetectors, e.g., their spectral sensitivity, responsivity, dark current, and 3dB bandwidth; (2) novel device designs, including waveguide-integrated photodetectors with high 3dB bandwidths and quantum efficiencies; (3) the integration of plasmonic metasurfaces and dielectric resonators with photodetectors; (4) the investigations of photodetectors in extreme environments, such as low temperatures and strong radiation; and (5) novel micro- and nanofabrication and packaging technologies for Si-based photodetectors.
Prof. Dr. Yuan Dong
Guest Editor
Manuscript Submission Information
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Keywords
- photodetectors
- silicon
- extreme environments
- fabrication processes
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