Memory Devices Based on Two-Dimensional Materials
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".
Deadline for manuscript submissions: closed (29 February 2024) | Viewed by 2209
Special Issue Editors
Interests: simulations and fabrication of memory devices based on novel materials
Special Issue Information
Dear Colleagues,
We are pleased to invite you to publish your research in this Special Issue on “Memory Devices Based on Two-dimensional Materials” in Micromachines. Memory devices are essential components of electronic systems, and their performance and power efficiency play important roles in determining the overall system performance. The emergence of two-dimensional (2D) materials has opened new possibilities for developing memory devices that offer higher performance and lower power consumption. This Special Issue aims to solicit relevant work in memory devices based on various 2D materials, including graphene, transition metal dichalcogenides (TMDs), black phosphorus, 2D organic materials, etc. The research directions include but are not limited to the preparation of new materials, improvement of device structures, applications of storage devices, simulations of device and materials, etc. In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:
- Floating-gate-device-based 2D materials;
- Resistive memory (RRAM)-device-based 2D materials;
- Ferroelectric-field-effect-transistor-based 2D materials;
- Optoelectronic-memory-device-based 2D materials;
- Logic-in-memory application of memory device based on 2D materials;
- Novel memory devices based on 2D materials;
- New organic or inorganic 2D materials applied in memory devices;
- New physical mechanism relative to memory in 2D materials;
- Magnetic memory device based on 2D materials.
We look forward to receiving your contributions.
Dr. Shupeng Chen
Dr. Wei Li
Guest Editors
Manuscript Submission Information
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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- memory device
- 2D materials
- logic-in-memory
- memory mechanism
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