Memory Devices Based on Two-Dimensional Materials

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: closed (29 February 2024) | Viewed by 1138

Special Issue Editors


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Guest Editor
School of Microelectronics, Xidian University, Xi’an 710126, China
Interests: simulations and fabrication of memory devices based on novel materials

E-Mail Website
Guest Editor
School of Microelectronics, Northwestern Polytechnical University, Xi’an 710072, China
Interests: novel memory devices and neuromorphic devices based on two-dimensional materials; design and reliability of new nanometer low power consumption devices

Special Issue Information

Dear Colleagues,

We are pleased to invite you to publish your research in this Special Issue on “Memory Devices Based on Two-dimensional Materials” in Micromachines. Memory devices are essential components of electronic systems, and their performance and power efficiency play important roles in determining the overall system performance. The emergence of two-dimensional (2D) materials has opened new possibilities for developing memory devices that offer higher performance and lower power consumption. This Special Issue aims to solicit relevant work in memory devices based on various 2D materials, including graphene, transition metal dichalcogenides (TMDs), black phosphorus, 2D organic materials, etc. The research directions include but are not limited to the preparation of new materials, improvement of device structures, applications of storage devices, simulations of device and materials, etc. In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Floating-gate-device-based 2D materials;
  • Resistive memory (RRAM)-device-based 2D materials;
  • Ferroelectric-field-effect-transistor-based 2D materials;
  • Optoelectronic-memory-device-based 2D materials;
  • Logic-in-memory application of memory device based on 2D materials;
  • Novel memory devices based on 2D materials;
  • New organic or inorganic 2D materials applied in memory devices;
  • New physical mechanism relative to memory in 2D materials;
  • Magnetic memory device based on 2D materials.

We look forward to receiving your contributions.

Dr. Shupeng Chen
Dr. Wei Li
Guest Editors

Manuscript Submission Information

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Keywords

  • memory device
  • 2D materials
  • logic-in-memory
  • memory mechanism

Published Papers (1 paper)

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Research

12 pages, 13982 KiB  
Article
A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection
by Zeen Han, Shupeng Chen, Hongxia Liu, Shulong Wang, Boyang Ma, Ruibo Chen and Xiaojun Fu
Micromachines 2024, 15(1), 96; https://doi.org/10.3390/mi15010096 - 31 Dec 2023
Viewed by 937
Abstract
To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper. Compared with the traditional DTSCR, the proposed DTSCR has an [...] Read more.
To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper. Compared with the traditional DTSCR, the proposed DTSCR has an enhanced current discharge capability that is achieved by creating a slave SCR path in parallel with the master SCR path. Moreover, the improved triggering and holding characteristic can be obtained by the proposed EDP-DTSCR. By sharing the anode emitter junction, a slave SCR path is constructed that is symmetrical to the position of the master SCR path to add an additional ESD discharge path to the EDP-DTSCR. In this way, the current discharge capability of the entire device is obviously improved. The TCAD simulation result shows that the proposed device has a remarkably lower on-resistance compared with the traditional DTSCR and the DTSCR with p-type guard ring (PGR-DTSCR). In addition, it is structurally optimized to further increase the holding voltage and reduce the trigger voltage to improve the anti-latching capability of the device, which is more conducive to the ESD protection window application of 28 nm CMOS technology. Full article
(This article belongs to the Special Issue Memory Devices Based on Two-Dimensional Materials)
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