Advances in Wide Band Gap (WBG) Materials for Electronic Devices
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 20 March 2026 | Viewed by 12
Special Issue Editor
Special Issue Information
Dear Colleagues,
Semiconductor materials with wider band gaps than traditional silicon—such as GaN, SiC, Ga2O3, and diamond—are enabling the development of power electronic devices with higher breakdown voltages and faster switching speeds. These wide band gap (WBG) devices can operate at elevated temperatures, significantly reducing the need for bulky cooling systems. Additionally, their ability to function at higher switching frequencies allows for the use of smaller passive components, thereby decreasing the overall size and weight of the devices.
WBG power devices are increasingly used in a range of applications, including power supplies for consumer electronics, electric vehicle (EV) charging systems, solar inverters, high-frequency wireless communication, etc. Among these materials, diamond stands out not only for its wide band gap and high electron-hole mobility but also for its exceptional thermal conductivity, making it ideal for thermal management in power electronics.
This Special Issue will showcase cutting-edge research in the field of WBG materials for electronic devices. We invite submissions focused on innovative materials processing, integration into device structures, electrical characterization, and performance testing, all aimed at addressing future technological challenges.
Dr. Awadesh Mallik
Guest Editor
Manuscript Submission Information
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Keywords
- GaN
- SiC
- Ga2O3
- diamond
- semiconductors
- electronics
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