Passive and Active THz Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: closed (28 February 2026) | Viewed by 499

Special Issue Editor


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Guest Editor
Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas Väg 10, SE-100 44 Stockholm, Sweden
Interests: THz technology; tunable THz devices; dielectric waveguides; nanotubes
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Special Issue Information

Dear Colleagues,

The research and development in the 0.1–1.0 THz frequency region are extremely significant for a wide range of applications, such as telecommunication and imaging systems, material spectroscopy, medical treatments, etc. Despite the problems in technology and high prices for basic components, THz systems offer high data rates for telecommunication, high spatial resolution in object visualizations, small sizes of antennas, and other elements. Otherwise, the state of the art of THz devices reveals serious issues with radiation sources, electronically/optically/mechanically tunable phase shifters, filters, etc. Micromachining is a rapidly developing novel technology platform for passive and active THz components to overcome these issues.

Accordingly, this Special Issue seeks to showcase research papers, communications, and review articles that focus on (1) novel designs, fabrication, and modeling of passive and active THz devices, tunable devices based on MEMS and/or NEMS, novel tunable nanomaterials, detectors, THz antennas, and arrays, including reflect arrays based on all kinds of actuation mechanisms; and (2) new developments applying THz devices to any kind of consumer electronics, telecommunication systems, medicine, agriculture, space, or defense.

Prof. Dr. Dmitri V. Lioubtchenko
Guest Editor

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Keywords

  • THz components
  • THz technology
  • THz waveguides
  • material properties for millimeter, microwave, and optoelectronic applications
  • novel 1-D and 2-D materials for THz applications
  • tunable THz materials and devices

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Research

10 pages, 3230 KB  
Article
Terahertz Properties of GeAsSeSbSnTe Chalcogenide Glassy Semiconductors
by Alexander V. Andrianov, Alexey A. Shakhmin, Alexey G. Petrov, Nikolay V. Sivov and Grigory I. Kropotov
Micromachines 2026, 17(5), 533; https://doi.org/10.3390/mi17050533 - 27 Apr 2026
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Abstract
Chalcogenide glasses are known as optical materials for the infrared spectral range. These compounds may also be of interest as materials for the low-frequency part of the terahertz range of electromagnetic waves, which is currently being intensively studied in connection with the numerous [...] Read more.
Chalcogenide glasses are known as optical materials for the infrared spectral range. These compounds may also be of interest as materials for the low-frequency part of the terahertz range of electromagnetic waves, which is currently being intensively studied in connection with the numerous possible applications of terahertz radiation. However, the terahertz optical characteristics of chalcogenide glasses remain poorly studied. In this work, eight different compositions of GeAsSeSbSnTe chalcogenide glasses were investigated using terahertz time-domain spectroscopy. A number of compositions, in particular GeSeTe and AsSeSbSn, were studied in the terahertz spectral range for the first time. Spectra of the refractive index and extinction coefficient were obtained for studied materials in the spectral range of 0.1–2.2 THz. The experimental frequency dependence of the product of the terahertz power absorption coefficient and the refractive index for the entire set of studied glasses is approximated by a power function. It was established that the exponent of the approximating power functions varies from 1.68 to 2.34 depending on the composition of the chalcogenide glass. For the studied glasses, a correlation was found between the values of the average coordination number characterizing the chalcogenide glass structure, and the values of the exponent of the functions approximating the THz absorption spectra. Full article
(This article belongs to the Special Issue Passive and Active THz Devices)
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