Special Issue "Smart Materials for Micro Electro Mechanical Systems (MEMS)"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 31 August 2020.

Special Issue Editor

Assist. Prof. Nathan Jackson
Guest Editor
Center for High Technology Materials and Mechanical Engineering, University of New Mexico, Albuquerque, NM, USA
Interests: piezoelectrics; energy harvesting; acoustic resonators; flexible/stretchable electronics; stimuli responsive polymers

Special Issue Information

Dear Colleagues,

This Special Issue on “Smart Materials for Micro Electro Mechanicanical Systems (MEMS)” for Materials will publish original work focusing on the development of smart materials with a MEMS target application. Papers can include areas focusing on fabrication techniques, material characterization, the development of novel materials, enhancing material properties, integration with MEMS, sensing, and actuation. MEMS applications of interest include energy conversion, BioMEMS, resonators, sensors, and actuators.

Smart or functional materials are often the key components required to allow the MEMS device to operate, and therefore they should be the main focus of the submitted manuscript. Significant advances in this area continue to enhance MEMS performance, and novel material or integration techniques allow next generation MEMS devices to be developed. Possible smart materials range from but are not limited to piezoelectrics, magnetcs, photonics, triboelectrics, stimuli-responsive polymers, composites, hybrids, flexible/stretchable, photomechanical, and shape memory materials. Methods of depositing MEMS materials using additive manufacturing methods are also welcome. Manuscripts should focus on the smart material developed, but should also include information on the entended MEMS device or application.  

It is my pleasure to invite you to submit an original manuscript to this Special Issue. Full communications and review papers are welcome.

Assist. Prof. Nathan Jackson
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • functional materials
  • MEMS
  • piezoelectrics
  • polymers
  • integration
  • sensing
  • microfabrication

Published Papers (1 paper)

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Open AccessArticle
In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition
Materials 2020, 13(2), 410; https://doi.org/10.3390/ma13020410 - 15 Jan 2020
Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) [...] Read more.
Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field. Full article
(This article belongs to the Special Issue Smart Materials for Micro Electro Mechanical Systems (MEMS))
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Nonlinear deflection analysis of micro awl-shaped serpentine springs for in-plane deformation

Authors: Meng-Ju Lin*, Hui-Min Chou+, and Rongshun Chen+

* Department of Mechanical and Computer-Aided Engineering, Feng Chia University

+ Department of Power Mechanical Engineering, National Tsing Hua University

The nonlinear deflections of micro awl-shaped serpentine microsprings for providing in-plane deformation area are investigated. The spring constants of micro awl-shaped serpentine microsprings for in-plane motion are theoretically derived. A finite element method software COMSOL Multiphysics is used for furthermore numerical analysis. These micro awl-shaped serpentine springs are successfully fabricated by silicon based micromachining on a silicon-on-insulator wafer. The experimental results agree well with theoretical solution and numerical results. The results show that the geometry of micro awl-shaped serpentine springs would affect the nonlinearity of spring deflections. The taper angle has the most significant effect on nonlinearity. Springs with larger taper angle and turn number and smaller thickness and width of beam would more easily induce nonlinear deformation.  The stresses of the awl-shaped springs when the nonlinearity happened are investigated by numerical analysis. It is also found that geometry of spring would affect the stress when the nonlinear behaviors of springs happen. Taper angles also have significant effect on the stresses. However, number of turns of spring has no obvious effect on the stress when the nonlinearity of springs happens.


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