Semiconductor Nanowires: Properties and Applications
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".
Deadline for manuscript submissions: closed (30 June 2020) | Viewed by 8324
Special Issue Editors
Interests: semiconductor nanowires; transmission electron microscopy; electrical characterisation
Special Issue Information
Dear Colleagues,
Semiconductor nanowires is an important research area and since 2009, there are well over 1000 publications per year in this research field. Nanowires have promising applications for optoelectronics including LEDs, lasers, solar cells and microelectronics as each individual nanowire can be a complete device if control over nanowire growth can be achieved. Uniquely, semiconductor heterostructures can be synthesized with different geometry within nanowires, namely in radial and/or axial configuration. Nanowire device applications rely on control over crystal structure, composition (in the case of ternary or quarternary semiconductors), doping, precise control over heterostructure interfaces or junctions for doped nanowires, radial and axial growth.
Apart from the growth issues, semiconductor devices face their own challenges, in particular electrical contact formation, limited by their small dimensions in an array or individually as a standalone p-n junction or as a channel within field effect transistors (FETs). Nanowire research has pushed the boundaries in characterisation techniques.
In this special issue, we invite submissions of original research papers as well as review articles on semiconductor nanowire growth, synthesis, characterisation device fabrication and characterisation.
Assoc. Prof. Jennifer Wong-Leung
Dr. Sudha Mokkapati
Guest Editors
Manuscript Submission Information
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Keywords
- semiconductor nanowires
- synthesis
- nanowire devices
- nanowire characterisation
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