Special Issue "Semiconductor Nanowires: Properties and Applications"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".

Deadline for manuscript submissions: 30 June 2020.

Special Issue Editors

Assoc. Prof. Jennifer Wong-Leung
Website
Guest Editor
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
Interests: semiconductor nanowires; transmission electron microscopy; electrical characterisation
Dr. Sudha Mokkapati
Website
Guest Editor
School of Physics and Astronomy, Cardiff University, Cardiff, Wales, UK
Interests: nanowire lasers; light-matter interaction; solar cells

Special Issue Information

Dear Colleagues,

Semiconductor nanowires is an important research area and since 2009, there are well over 1000 publications per year in this research field.  Nanowires have promising applications for optoelectronics including LEDs, lasers, solar cells and microelectronics as each individual nanowire can be a complete device if control over nanowire growth can be achieved. Uniquely, semiconductor heterostructures can be synthesized with different geometry within nanowires, namely in radial and/or axial configuration. Nanowire device applications rely on control over crystal structure, composition (in the case of ternary or quarternary semiconductors), doping, precise control over heterostructure interfaces or junctions for doped nanowires, radial and axial growth.

Apart from the growth issues, semiconductor devices face their own challenges, in particular electrical contact formation, limited by their small dimensions in an array or individually as a standalone p-n junction or as a channel within field effect transistors (FETs). Nanowire research has pushed the boundaries in characterisation techniques.

In this special issue, we invite submissions of original research papers as well as review articles on semiconductor nanowire growth, synthesis, characterisation device fabrication and characterisation.

Assoc. Prof. Jennifer Wong-Leung
Dr. Sudha Mokkapati
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor nanowires
  • synthesis
  • nanowire devices
  • nanowire characterisation

Published Papers (2 papers)

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Research

Open AccessArticle
Enhancing Thermal Oxidation Stability of Silver Nanowire Transparent Electrodes by Using a Cesium Carbonate-Incorporated Overcoating Layer
Materials 2019, 12(7), 1140; https://doi.org/10.3390/ma12071140 - 08 Apr 2019
Cited by 2
Abstract
Despite their excellent electrical and optical properties, Ag nanowires (NWs) suffer from oxidation when exposed to air for several days. In this study, we synthesized a Cs carbonate-incorporated overcoating layer by spin-coating and ultraviolet curing to prevent the thermal oxidation of Ag NWs. [...] Read more.
Despite their excellent electrical and optical properties, Ag nanowires (NWs) suffer from oxidation when exposed to air for several days. In this study, we synthesized a Cs carbonate-incorporated overcoating layer by spin-coating and ultraviolet curing to prevent the thermal oxidation of Ag NWs. Cs incorporation increased the decomposition temperature of the overcoating layer, thus enhancing its thermal resistance. The effects of the Cs carbonate-incorporated overcoating layer on the optoelectrical properties and stability of Ag NWs were investigated in detail. The Ag NW electrode reinforced with the Cs carbonate-incorporated overcoating layer exhibited excellent thermal oxidation stability after exposure to air for 55 days at 85 °C and a relative humidity of 85%. The novel overcoating layer synthesized in this study is a promising passivation layer for Ag NWs against thermal oxidation under ambient conditions. This overcoating layer can be applied in large-area optoelectronic devices based on Ag NW electrodes. Full article
(This article belongs to the Special Issue Semiconductor Nanowires: Properties and Applications)
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Open AccessArticle
Synthesis and Photocatalytic Properties of CuO-CuS Core-Shell Nanowires
Materials 2019, 12(7), 1106; https://doi.org/10.3390/ma12071106 - 03 Apr 2019
Cited by 3
Abstract
In this study, an efficient method to synthesize CuO-CuS core-shell nanowires by two-step annealing process was reported. CuO nanowires were prepared on copper foil via thermal oxidation in a three-zone horizontal tube furnace. To obtain larger surface area for photocatalytic applications, we varied [...] Read more.
In this study, an efficient method to synthesize CuO-CuS core-shell nanowires by two-step annealing process was reported. CuO nanowires were prepared on copper foil via thermal oxidation in a three-zone horizontal tube furnace. To obtain larger surface area for photocatalytic applications, we varied four processing parameters, finding that growth at 550 °C for 3 h with 16 °C/min of the ramping rate under air condition led to CuO nanowires of appropriate aspect ratio and number density. The second step, sulfurization process, was conducted to synthesize CuO-CuS core-shell nanowires by annealing with sulfur powder at 250 °C for 30 min under lower pressure. High-resolution transmission electron microscopy studies show that a 10 nm thick CuS shell formed and the growth mechanism of the nanowire heterostructure has been proposed. With BET, the surface area was measured to be 135.24 m2·g−1. The photocatalytic properties were evaluated by the degradation of methylene blue (MB) under visible light irradiation. As we compared CuO-CuS core-shell nanowires with CuO nanowires, the 4-hour degradation rate was enhanced from 67% to 89%. This could be attributed to more effective separation of photoinduced electron and hole pairs in the CuO-CuS heterostructure. The results demonstrated CuO-CuS core-shell nanowires as a promising photocatalyst for dye degradation in polluted water. Full article
(This article belongs to the Special Issue Semiconductor Nanowires: Properties and Applications)
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Vanadium Dioxide Low-dimensional Structures: Fabrication, Properties and Applications

Yue Zheng

State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, 510275, Guangzhou, China

Micro&Nano Physics and Mechanics Research Laboratory, School of Physics, Sun Yat-sen University, 510275, Guangzhou, China

Vanadium dioxide (VO2) attracts extensive attentions due to the typical metal-insulator phase transition (MIT) from high temperature metallic phase to low temperature insulated phase. Meanwhile, conductance and optical transmittance have significant change accompanied by the structural transition. The distinctive properties of VO2 determine that it has indispensable applications in electric and optical switches, smart windows, sensors, actuators, etc. Among multitudinous factors that can regulate the MIT characteristics, low-dimensional structure (LDS) is an effective and convenient method combining with the size, surface/interface and misfit effects. In this review, we provide a comprehensive summary of the recent state-of-the-art works on the fabrication of abundant VO2 LDSs, the important phenomena and properties, as well as the related applications. Additionally, the review also highlights the challenges and opportunities of VO2 LDSs in the future researches and applications.

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