Atomic Layer Deposition and Atomic Layer Etching
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".
Deadline for manuscript submissions: closed (20 November 2022) | Viewed by 420
Special Issue Editors
Interests: atomic layer deposition; advanced CMOS; gate stack; 2D nanomaterials and heterostructures; fabrication and integration of next-generation electronic devices
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
In recent years, there have been significant advances in atomic layer deposition (ALD) and atomic layer etching (ALE), which are very powerful and elegant tools in many industrial and research applications. As ALD/ALE technology matures and diversifies, it is believed to create various applications through innovation and optimization. This Special Issue of Materials on “Atomic Layer Deposition and Atomic Layer Etching” is intended to cover original research and critical review articles on recent advances in all aspects of ALD/ALE.
Potential topics include but are not limited to the following:
- ALD applications: memory, display, energy, and emerging applications, etc.;
- ALD fundamentals: precursors and chemistry, growth, and characterization;
- Area-selective ALD and epitaxial growth of ALD;
- In situ characterization of ALD processes and materials;
- Thermal and plasma atomic layer etching (ALE).
Prof. Dr. Jiyoung Kim
Prof. Dr. Si Joon Kim
Guest Editors
Manuscript Submission Information
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Keywords
- atomic layer deposition
- atomic layer etching
- dielectrics
- ferroelectrics
- antiferroelectrics
