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Advances in Silicon Carbide (SiC) and Related Materials: Structure Design, Fabrication and Application

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced and Functional Ceramics and Glasses".

Deadline for manuscript submissions: 20 June 2026 | Viewed by 2106

Special Issue Editors

Dr. Chong Wei

E-Mail Website
Guest Editor
School of Mechanics and Civil Architecture, Northwestern Polytechnical University, Xi'an 710072, China
Interests: ceramic sintering; freeze-casting; heterogenous composite
Dr. Bin Liang

E-Mail Website
Guest Editor
Shi-Changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Interests: multifunctional structural silicon-based ceramics (e.g., SiC, SiBCN) and ceramic matrix composites; 2D materials (graphene, MXenes) and energy storage materials (ceramic electrolyte)
Dr. Marcin Chmielewski

E-Mail Website
Guest Editor
Institute of Microelectronics and Photonics, 32/46 Al. Lotników, 02-668 Warsaw, Poland
Interests: SiC-based composite materials; metal-ceramic interface; interfacial reactions, microstructural evolution; mechanical, thermal, and chemical stability

Special Issue Information

Dear Colleagues,

Silicon carbide (SiC), with its exceptional mechanical properties, high-temperature stability, radiation resistance, and excellent chemical inertness, has shown great potential for applications in nuclear energy, aerospace, and electronic semiconductor devices. This Special Issue focuses on the fabrication, optimization, and multi-scale simulation of SiC and related materials, their performance under extreme conditions in advanced nuclear systems and aerospace applications (including high-temperature mechanical properties, corrosion resistance, and radiation tolerance), and the latest advancements in SiC electronic and semiconductor devices, functional coatings, and surface modification technologies. By optimizing fabrication processes, tailoring microstructures and macrostructures, enhancing heterogeneous interface bonding strength, and improving overall material performance, the goal is to further advance the application and development of SiC and related materials in extreme environments.

Dr. Chong Wei
Dr. Bin Liang
Dr. Marcin Chmielewski
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • SiC materials
  • SiC-based composites
  • extreme environment performance
  • multi-scale structural design
  • fabrication technology
  • nuclear applications
  • electronic devices

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Published Papers (3 papers)

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Research

14 pages, 1792 KB  
Article
Sphericity Control of UO2 Fuel Kernels Through Gelling Media Coupling with Multi-Field Washing
by Laiyao Geng, Hui Jing, Yanli Zhao, Jia Li, Xiaolong Liu, Yongjun Jiao, Yong Xin, Yuanming Li, Hailong Qin, Xin Li and Shan Guo
Materials 2026, 19(8), 1484; https://doi.org/10.3390/ma19081484 - 8 Apr 2026
Viewed by 398
Abstract
Nuclear energy has emerged as a crucial technological solution for ensuring energy security and achieving carbon neutrality goals, given its ultra-high energy density and near-zero carbon emissions against the backdrop of rapid socioeconomic development, increasing energy demands, and accelerated global transition toward low-carbon [...] Read more.
Nuclear energy has emerged as a crucial technological solution for ensuring energy security and achieving carbon neutrality goals, given its ultra-high energy density and near-zero carbon emissions against the backdrop of rapid socioeconomic development, increasing energy demands, and accelerated global transition toward low-carbon energy structures. As the core component for energy conversion in nuclear reactors, fuel elements critically determine reactor efficiency and safety performance, with the fission product retention capability of silicon carbide layers in multilayer-coated fuel particles having been thoroughly validated through high-temperature gas-cooled reactor irradiation tests. The precise sphericity control of large-sized UO2 fuel kernels represents a fundamental requirement for enhancing tristructural isotropic (TRISO) fuel particle performance and advancing Generation IV nuclear power plant development. This study presents a sphericity control strategy based on sol–gel processing that synergistically integrates physicochemical regulation of gelling media with multi-field washing flow field optimization. By implementing silicone oil-mediated interfacial tension gradient control, we effectively suppressed gel sphere destabilization while developing an innovative three-phase sequential washing technique involving kerosene washing, anhydrous ethanol interfacial transition, and ammonia solution replacement, which significantly enhanced mass transfer diffusion in stagnant liquid films and revolutionized fuel microsphere washing technology with improved efficiency and quality. Experimental results demonstrate that this integrated approach increases kernel sphericity qualification to 99.8%, reduces washing solution consumption by 79%, and achieves an average sphericity of 1.03. The research establishes a coupling mechanism between gelling media and multi-field washing processes, elucidating the synergistic effect between interfacial tension regulation and washing optimization, thereby providing both theoretical foundations and engineering application basis for the precision manufacturing of high-performance nuclear fuels. Full article
(This article belongs to the Special Issue Advances in Silicon Carbide (SiC) and Related Materials: Structure Design, Fabrication and Application)
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18 pages, 3587 KB  
Article
Characteristics of Pulsed-Laser-Induced Layers with Cracks Prepared for SiC Grinding Processes
by Hu Li, Yanjiao Jiang, Yujia Yang, Jianyu Yang and Lida Zhu
Materials 2026, 19(2), 397; https://doi.org/10.3390/ma19020397 - 19 Jan 2026
Viewed by 387
Abstract
When grinding silicon carbide, surface and subsurface damage have a significant impact on the product’s surface quality. One method to control the crack dimensions is laser irradiation on the SiC surface. The effect of this method on the grinding process is analyzed in [...] Read more.
When grinding silicon carbide, surface and subsurface damage have a significant impact on the product’s surface quality. One method to control the crack dimensions is laser irradiation on the SiC surface. The effect of this method on the grinding process is analyzed in this study. A series of experiments was carried out based on an orthogonal experimental design, with systematic adjustments made to laser parameters, including pulse energy (current), laser spot spacing, scanning times, and grinding process parameters. During the experiments, the grinding force was monitored by a dynamometer, and the specific grinding energy was calculated accordingly. Pulsed engraving laser modification effectively reduced the hardness of the ceramic surface layer by about 20%. The median and radial crack sizes induced by the laser in the subsurface layer ranged from 20.4 μm to 54.3 μm. This effectively inhibited further propagation of median and radial cracks during the grinding processes. Simultaneously, the tangential grinding force Ft was reduced by 30%. These conclusions were obtained through corresponding experiments that link surface roughness to laser power and grinding parameters. Using laser-induced controllable crack characteristics in the grinding process allow damage from surface and subsurface grinding to be controlled in brittle materials. Full article
(This article belongs to the Special Issue Advances in Silicon Carbide (SiC) and Related Materials: Structure Design, Fabrication and Application)
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13 pages, 3843 KB  
Article
Application of UV Laser for Ohmic Contact Formation on 4H-SiC
by Andrzej Kubiak, Janusz Wozny, Izabela Bobowska and Alessandro Verdolotti
Materials 2025, 18(21), 4946; https://doi.org/10.3390/ma18214946 - 29 Oct 2025
Viewed by 831
Abstract
In this paper, we demonstrate a simplified method for fabricating ohmic contacts on 4H-SiC substrates using pulsed UV laser surface modification followed by application of a silver-based conductive adhesive. Even a small number of laser passes significantly improved the contact interface, while ten [...] Read more.
In this paper, we demonstrate a simplified method for fabricating ohmic contacts on 4H-SiC substrates using pulsed UV laser surface modification followed by application of a silver-based conductive adhesive. Even a small number of laser passes significantly improved the contact interface, while ten or more repetitions produced linear I–V characteristics with low voltage drops. SEM analysis revealed surface ablation and an expanded effective area of the contact. Raman spectroscopy proved that laser processing leads to surface amorphization of the SiC sample. DFT simulations showed that the amorphous SiC layer is a material with no band gap, explaining the elimination of the Schottky barrier. Our approach enables the manufacturing of reliable, low-resistive contacts without high-temperature annealing and offers a practical route for rapid SiC device prototyping. Full article
(This article belongs to the Special Issue Advances in Silicon Carbide (SiC) and Related Materials: Structure Design, Fabrication and Application)
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