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Materials
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Research Progress of Advanced Crystals: Growth and Doping
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Research Progress of Advanced Crystals: Growth and Doping

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Chemistry".

Deadline for manuscript submissions: closed (20 August 2025) | Viewed by 6195

Special Issue Editors

Dr. Lei Zhang

E-Mail Website
Guest Editor
State Key Laboratory of Crystal Material, Shandong University, Jinan, China
Interests: crystal growth; wide-bandgap semiconductor; GaN crystal; AlN crystal; perovskite crystal
Special Issues, Collections and Topics in MDPI journals
Dr. Songyang Lv

E-Mail
Guest Editor Assistant
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, China
Interests: energy storage; crystal growth; wide bandgap semiconductor; gallium nitride (GaN); aluminium nitride (AlN)

Special Issue Information

Dear Colleagues,

Crystalline materials, including but not limited to Gallium Nitride (GaN), are wide-bandgap semiconductors characterized by high breakdown voltage and improved electron mobility. These materials exhibit exceptional optical and electrical properties, making them suitable for a variety of applications such as lasers and high-voltage and high-frequency power electronic devices. Their potential spans across solid-state lighting, data storage, image display, ultraviolet detectors, new-energy vehicles, and communication technologies. Research into the growth and properties of various crystalline materials has significantly advanced the fields of optoelectronics and electronics. However, the presence of low-quality crystals, which often exhibit high dislocation density, low transparency, and a small radius of curvature, poses challenges for the development of high-performance devices. Therefore, the pursuit of high-quality, large-size, and cost-effective crystalline materials is essential for enhancing device performance and expanding their applications. Additionally, doping techniques can be employed to modify the properties of these materials, further broadening their range of applications.

As part of this Special Issue, we invite submissions that investigate the physical and chemical phenomena associated with the vapor and liquid phase growth of various crystalline materials, along with theoretical and experimental studies related to these processes. We will also emphasize research that analyzes the effects of doping on the properties of crystals.

It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.

Dr. Lei Zhang
Guest Editor

Dr. Songyang Lv
Guest Editor Assistant

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • GaN crystal growth
  • vapor phase growth
  • liquid phase growth
  • doping
  • crystalline surfaces
  • crystalline interface
  • crystallization mechanisms
  • characterization techniques of crystal
  • numerical simulation of crystal

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Published Papers (4 papers)

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Research

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10 pages, 2877 KB  
Communication
Localized Surface Phonon Polaritons and Infrared Optical Absorption of ScAlN Nanoresonators
by Huanhuan Zhao, Tao Cheng, Xinlei Duan, Mingxin Lv, Jia-Yue Yang and Linhua Liu
Materials 2025, 18(16), 3906; https://doi.org/10.3390/ma18163906 - 21 Aug 2025
Viewed by 590
Abstract
Alloying AlN with ScN provides a robust strategy for engineering its intrinsic bandgap, phonons and dielectric functions, and ScAlN alloys have demonstrated great promise in applications including the 5G mobile network, surface acoustic wave devices and nanophotonics. Sc doping has been shown to [...] Read more.
Alloying AlN with ScN provides a robust strategy for engineering its intrinsic bandgap, phonons and dielectric functions, and ScAlN alloys have demonstrated great promise in applications including the 5G mobile network, surface acoustic wave devices and nanophotonics. Sc doping has been shown to greatly influence the phonons and infrared dielectric functions of AlN, yet few studies have focused on its influence on surface phonon polaritons, which are crucial to modulating the radiative properties of ScAlN metasurfaces. Herein, we combined first-principles and finite element method (FEM) simulations to fully investigate the effects of Sc incorporation on the phonon dispersion relation, propagation and localization of SPhPs and the modulated radiative properties of ScAlN nanoresonators. As the Sc doping concentration increases, the highest optical phonon frequencies are reduced and are largely directly related to enlarged lattice parameters. Consequently, the coupling strength among incident photons and phonons decreases, which leads to a reduced absorption peak in the infrared dielectric functions. Moreover, the propagation length of the SPhPs in ScAlN is largely reduced, and localized resonance modes gradually disappear at a higher Sc doping concentration. This work provides physical insights into the spectra tuning mechanisms of ScAlN nanoresonators via Sc doping and facilitates their applications in nanophotonic devices. Full article
(This article belongs to the Special Issue Research Progress of Advanced Crystals: Growth and Doping)
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13 pages, 4725 KB  
Article
Growths of SiC Single Crystals Using the Physical Vapor Transport Method with Crushed CVD-SiC Blocks Under High Vertical Temperature Gradients
by Ju-Hyeong Sun, Jae-Hyeon Park, Si-Young Bae, Yun-Ji Shin, Yong-Jin Kwon, Won-Jae Lee, Se-Hun Kwon and Seong-Min Jeong
Materials 2024, 17(23), 5789; https://doi.org/10.3390/ma17235789 - 26 Nov 2024
Viewed by 2335
Abstract
A recent study reported the rapid growth of SiC single crystals of ~1.5 mm/h using high-purity SiC sources obtained by recycling CVD-SiC blocks used as materials in semiconductor processes. This method has gained attention as a way to improve the productivity of the [...] Read more.
A recent study reported the rapid growth of SiC single crystals of ~1.5 mm/h using high-purity SiC sources obtained by recycling CVD-SiC blocks used as materials in semiconductor processes. This method has gained attention as a way to improve the productivity of the physical vapor transport (PVT) method, widely used for manufacturing single crystal substrates for power semiconductors. When recycling CVD-SiC blocks by crushing them for use as sources for growing SiC single crystals, the properties and the particle size distribution of the material differ from those of conventional commercial SiC powders, making it necessary to study their effects. Therefore, in this study, SiC single crystals were grown using the PVT method with crushed CVD-SiC blocks of various sizes as the source material, and the growth behavior was analyzed. Simulation results of the temperature distribution in the PVT system confirmed that using large, crushed blocks as the SiC source material generates a greater temperature gradient within the source compared to conventional commercial SiC powder, making it advantageous for rapid growth processes. Additionally, when the large, crushed blocks were vertically aligned, good crystal quality was experimentally achieved at high growth rates, even under non-optimized growth conditions. Full article
(This article belongs to the Special Issue Research Progress of Advanced Crystals: Growth and Doping)
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11 pages, 1960 KB  
Article
Silicon Carbide Nanowire Based Integrated Electrode for High Temperature Supercapacitors
by Shiyu Sha, Chang Liang, Songyang Lv, Lin Xu, Defu Sun, Jiayue Yang, Lei Zhang and Shouzhi Wang
Materials 2024, 17(16), 4161; https://doi.org/10.3390/ma17164161 - 22 Aug 2024
Cited by 3 | Viewed by 1817
Abstract
Silicon carbide (SiC) single crystals have great prospects for high-temperature energy storage due to their robust structural stability, ultrahigh power output, and superior temperature stability. However, energy density is an essential challenge for SiC-based devices. Herein, a facile two-step strategy is proposed for [...] Read more.
Silicon carbide (SiC) single crystals have great prospects for high-temperature energy storage due to their robust structural stability, ultrahigh power output, and superior temperature stability. However, energy density is an essential challenge for SiC-based devices. Herein, a facile two-step strategy is proposed for the large-scale synthesis of a unique architecture of SiC nanowires incorporating MnO2 for enhanced supercapacitors (SCs), arising from the synergy effect between the SiC nanowires as a highly conductive skeleton and the MnO2 with numerous active sites. The SiC@MnO2 integrated electrode-based SCs with ionic liquid (IL) electrolytes were assembled and delivered outstanding energy and power density, as well as a great lifespan at 150 °C. This impressive work offers a novel avenue for the practical application of SiC-based electrochemical energy storage devices with high energy density under high temperatures. Full article
(This article belongs to the Special Issue Research Progress of Advanced Crystals: Growth and Doping)
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Review

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16 pages, 15757 KB  
Review
The Impact of Molecular Weight Distribution on the Crystalline Texture of Polymers—Illustrated by Lamellar Crystal, Shish–Kebab and Nested Spherulites
by Songyan Lu, Min Chen and Hanying Li
Materials 2025, 18(17), 4196; https://doi.org/10.3390/ma18174196 - 7 Sep 2025
Viewed by 693
Abstract
Manipulating polymer crystallization behavior and structure without altering chemical composition remains a core challenge in polymer crystallography. Molecular weight, as an intrinsic material property, governs the crystallization process from nucleation through growth. Synthetic polymer materials exhibit molecular weight distribution (MWD), resulting in polydisperse [...] Read more.
Manipulating polymer crystallization behavior and structure without altering chemical composition remains a core challenge in polymer crystallography. Molecular weight, as an intrinsic material property, governs the crystallization process from nucleation through growth. Synthetic polymer materials exhibit molecular weight distribution (MWD), resulting in polydisperse polymer chains within one system. This MWD drives distinct crystalline structures, whereas synergistic crystallization behaviors arise among chains of various lengths. MWD yields complex crystallization behaviors. Especially, spatial molecular weight distribution induces novel crystalline textures in polymer materials. Elucidating the crystallization mechanisms is vital for understanding structure-property relationships in polymers. Herein, the recent advances in the various influences of MWD on polymer crystal textures are systematically demonstrated. Full article
(This article belongs to the Special Issue Research Progress of Advanced Crystals: Growth and Doping)
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