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Research Progress of Advanced Crystals: Growth and Doping

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Chemistry".

Deadline for manuscript submissions: 20 August 2025 | Viewed by 2554

Special Issue Editors

State Key Laboratory of Crystal Material, Shandong University, Jinan, China
Interests: crystal growth; wide bandgap semiconductor; GaN crystal; AlN crystal; perovskite crystal
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Guest Editor Assistant
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, China
Interests: energy storage; crystal growth; wide bandgap semiconductor; gallium nitride (GaN); aluminium nitride (AlN)

Special Issue Information

Dear Colleagues,

Crystalline materials, including but not limited to Gallium Nitride (GaN), are wide-bandgap semiconductors characterized by high breakdown voltage and improved electron mobility. These materials exhibit exceptional optical and electrical properties, making them suitable for a variety of applications such as lasers and high-voltage and high-frequency power electronic devices. Their potential spans across solid-state lighting, data storage, image display, ultraviolet detectors, new-energy vehicles, and communication technologies. Research into the growth and properties of various crystalline materials has significantly advanced the fields of optoelectronics and electronics. However, the presence of low-quality crystals, which often exhibit high dislocation density, low transparency, and a small radius of curvature, poses challenges for the development of high-performance devices. Therefore, the pursuit of high-quality, large-size, and cost-effective crystalline materials is essential for enhancing device performance and expanding their applications. Additionally, doping techniques can be employed to modify the properties of these materials, further broadening their range of applications.

As part of this Special Issue, we invite submissions that investigate the physical and chemical phenomena associated with the vapor and liquid phase growth of various crystalline materials, along with theoretical and experimental studies related to these processes. We will also emphasize research that analyzes the effects of doping on the properties of crystals.

It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.

Dr. Lei Zhang
Guest Editor

Dr. Songyang Lv
Guest Editor Assistant

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

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Keywords

  • GaN crystal growth
  • vapor phase growth
  • liquid phase growth
  • doping
  • crystalline surfaces
  • crystalline interface
  • crystallization mechanisms
  • characterization techniques of crystal
  • numerical simulation of crystal

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Published Papers (2 papers)

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13 pages, 4725 KiB  
Article
Growths of SiC Single Crystals Using the Physical Vapor Transport Method with Crushed CVD-SiC Blocks Under High Vertical Temperature Gradients
by Ju-Hyeong Sun, Jae-Hyeon Park, Si-Young Bae, Yun-Ji Shin, Yong-Jin Kwon, Won-Jae Lee, Se-Hun Kwon and Seong-Min Jeong
Materials 2024, 17(23), 5789; https://doi.org/10.3390/ma17235789 - 26 Nov 2024
Viewed by 909
Abstract
A recent study reported the rapid growth of SiC single crystals of ~1.5 mm/h using high-purity SiC sources obtained by recycling CVD-SiC blocks used as materials in semiconductor processes. This method has gained attention as a way to improve the productivity of the [...] Read more.
A recent study reported the rapid growth of SiC single crystals of ~1.5 mm/h using high-purity SiC sources obtained by recycling CVD-SiC blocks used as materials in semiconductor processes. This method has gained attention as a way to improve the productivity of the physical vapor transport (PVT) method, widely used for manufacturing single crystal substrates for power semiconductors. When recycling CVD-SiC blocks by crushing them for use as sources for growing SiC single crystals, the properties and the particle size distribution of the material differ from those of conventional commercial SiC powders, making it necessary to study their effects. Therefore, in this study, SiC single crystals were grown using the PVT method with crushed CVD-SiC blocks of various sizes as the source material, and the growth behavior was analyzed. Simulation results of the temperature distribution in the PVT system confirmed that using large, crushed blocks as the SiC source material generates a greater temperature gradient within the source compared to conventional commercial SiC powder, making it advantageous for rapid growth processes. Additionally, when the large, crushed blocks were vertically aligned, good crystal quality was experimentally achieved at high growth rates, even under non-optimized growth conditions. Full article
(This article belongs to the Special Issue Research Progress of Advanced Crystals: Growth and Doping)
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11 pages, 1960 KiB  
Article
Silicon Carbide Nanowire Based Integrated Electrode for High Temperature Supercapacitors
by Shiyu Sha, Chang Liang, Songyang Lv, Lin Xu, Defu Sun, Jiayue Yang, Lei Zhang and Shouzhi Wang
Materials 2024, 17(16), 4161; https://doi.org/10.3390/ma17164161 - 22 Aug 2024
Cited by 1 | Viewed by 1282
Abstract
Silicon carbide (SiC) single crystals have great prospects for high-temperature energy storage due to their robust structural stability, ultrahigh power output, and superior temperature stability. However, energy density is an essential challenge for SiC-based devices. Herein, a facile two-step strategy is proposed for [...] Read more.
Silicon carbide (SiC) single crystals have great prospects for high-temperature energy storage due to their robust structural stability, ultrahigh power output, and superior temperature stability. However, energy density is an essential challenge for SiC-based devices. Herein, a facile two-step strategy is proposed for the large-scale synthesis of a unique architecture of SiC nanowires incorporating MnO2 for enhanced supercapacitors (SCs), arising from the synergy effect between the SiC nanowires as a highly conductive skeleton and the MnO2 with numerous active sites. The SiC@MnO2 integrated electrode-based SCs with ionic liquid (IL) electrolytes were assembled and delivered outstanding energy and power density, as well as a great lifespan at 150 °C. This impressive work offers a novel avenue for the practical application of SiC-based electrochemical energy storage devices with high energy density under high temperatures. Full article
(This article belongs to the Special Issue Research Progress of Advanced Crystals: Growth and Doping)
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