Research Progress of Advanced Crystals: Growth and Doping

Dear Colleagues,

Crystalline materials, including but not limited to Gallium Nitride (GaN), are wide-bandgap semiconductors characterized by high breakdown voltage and improved electron mobility. These materials exhibit exceptional optical and electrical properties, making them suitable for a variety of applications such as lasers and high-voltage and high-frequency power electronic devices. Their potential spans across solid-state lighting, data storage, image display, ultraviolet detectors, new-energy vehicles, and communication technologies. Research into the growth and properties of various crystalline materials has significantly advanced the fields of optoelectronics and electronics. However, the presence of low-quality crystals, which often exhibit high dislocation density, low transparency, and a small radius of curvature, poses challenges for the development of high-performance devices. Therefore, the pursuit of high-quality, large-size, and cost-effective crystalline materials is essential for enhancing device performance and expanding their applications. Additionally, doping techniques can be employed to modify the properties of these materials, further broadening their range of applications.

As part of this Special Issue, we invite submissions that investigate the physical and chemical phenomena associated with the vapor and liquid phase growth of various crystalline materials, along with theoretical and experimental studies related to these processes. We will also emphasize research that analyzes the effects of doping on the properties of crystals.

It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.

Dr. Lei Zhang
Guest Editor

Dr. Songyang Lv
Guest Editor Assistant

Manuscript Submission Information

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