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Semiconductor with Novel Electronic and Optoelectronic Properties: Design, Fabrication and Characterization

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: closed (20 May 2025) | Viewed by 1745

Special Issue Editor


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Guest Editor
School of Physics, Beijing Institute of Technology, Beijing 100081, China
Interests: nanomaterials; optoelectronics; photodetectors; semiconductor; solar cells; molecular materials and devices; light-emitting diodes; colloidal quantum dots; light-emitting transistors
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Special Issue Information

Dear Colleagues,

Semiconductors with novel electronic and optoelectronic properties have become an extremely active research field, encompassing novel electronic and optoelectronic materials, nanomaterials, physical phenomena and design concepts. The objective of this Special Issue is to address these conceptual challenges while highlighting novel trends in electronic and optoelectronic materials and devices, such as the structural properties, band structure, transport, surfaces and interfaces, optical and magnetic properties of semiconductor structures. In addition to conventional semiconductor physics, self-assembled structures, mesoscopic structures and the developing field of spintronics, the effects of low-dimensional physics and strain are included, as well as its modeling and component development.

Prof. Dr. Shengyi Yang
Guest Editor

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Keywords

  • electronic materials and devices
  • optoelectronic materials and devices
  • surfaces and interfaces
  • optical and magnetic properties
  • electronic and optoelectronic properties

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Published Papers (1 paper)

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Research

15 pages, 3181 KiB  
Article
Bandgap Characteristics of Boron-Containing Nitrides—Ab Initio Study for Optoelectronic Applications
by Pawel Strak, Iza Gorczyca and Henryk Teisseyre
Materials 2024, 17(20), 5120; https://doi.org/10.3390/ma17205120 - 21 Oct 2024
Cited by 1 | Viewed by 1274
Abstract
Hexagonal boron nitride (h-BN) is recognized as a 2D wide bandgap material with unique properties, such as effective photoluminescence and diverse lattice parameters. Nitride alloys containing h-BN have the potential to revolutionize the electronics and optoelectronics industries. The energy band structures of three [...] Read more.
Hexagonal boron nitride (h-BN) is recognized as a 2D wide bandgap material with unique properties, such as effective photoluminescence and diverse lattice parameters. Nitride alloys containing h-BN have the potential to revolutionize the electronics and optoelectronics industries. The energy band structures of three boron-containing nitride alloys—BxAl1−xN, BxGa1−xN, and BxIn1−xN—were calculated using standard density functional theory (DFT) with the hybrid Heyd–Scuseria–Ernzerhof (HSE) function to correct lattice parameters and energy gaps. The results for both wurtzite and hexagonal structures reveal several notable characteristics, including a wide range of bandgap values, the presence of both direct and indirect bandgaps, and phase mixing between wurtzite and hexagonal structures. The hexagonal phase in these alloys is observed at very low and very high boron concentrations (x), as well as in specific atomic configurations across the entire composition range. However, cohesive energy calculations show that the hexagonal phase is more stable than the wurtzite phase only when x > 0.5, regardless of atomic arrangement. These findings provide practical guidance for optimizing the epitaxial growth of boron-containing nitride thin films, which could drive future advancements in electronics and optoelectronics applications. Full article
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