Spin-Orbit Torque/Voltage-Controlled MRAM and Low Power Application

Dear Colleagues,

MRAM (magnetic random access memory) is the only memory technology at present that can achieve nonvolatility and is capable of an infinite number of write operations. Spin-transfer torque MRAM (STT-MRAM), which enables low power and high-speed writing, has been developed and is in the commercialization phase together with conventional MRAM. The progress of STT-MRAM is advancing both in stand-alone memory and embedded memory. With this memory, computer systems and artificial intelligence (AI) systems can realize ultra-low power consumption because of allowing equipment to be turned off normally when not in use and to be turned on instantly to operate with full performance when needed. Furthermore, it will contribute greatly to the progress of the IoT (Internet of Things), which requires sophisticated processing on a "things" site, and brain-type computing including new usage of device characteristics.

Now, however, the focus of research on memory technology itself has shifted to the next, especially spin-orbit torque MRAM (SOT-MRAM) and voltage-controlled MRAM (VC-MRAM). The main reason for this shift is the further reduction of power consumption as well as high speed. In STT-MRAM, the write current magnitude still needs to be reduced to increase capacity. And there is a read disturbance problem due to the same read and write current path. Novel MRAM technology is expected to be used for a solution with SOT-MRAM's highly efficient spin current generation and VC-MRAM's magnetic anisotropy, which is controllable by voltage, not current. Also, research on the fundamental characteristics of these types of memory as the operating principle in spintronics has been enhanced.

In this situation, this special issue will focus on the latest developments in these fields. It will reflect a wide spectrum of research topics from experiments with its operating principle, device and circuit configuration, to neuromorphic systems and AI, IoT system application. Authors are invited to submit regular papers following the JLPEA (Journal of Low Power Electronics and Applications) submission guidelines within the remit of this special issue call. Topics include but are not limited to:

• Physical property experiments
• Materials and device characteristics
• Stand-alone/embedded memory circuits and large scale integration
• Functional logic circuits and configuration with SOT/VC MRAM devices
• Neuromorphic circuits and systems with SOT/VC MRAM devices
• Circuits, systems, and methods for IoT and AI applications with SOT/VC MRAM

Prof. Takayuki Kawahara
Guest Editor

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• MRAM
• Spin-orbit torque
• Voltage-controlled magnetic anisotropy
• AI and IoT system application