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Special Issue "Reliability of WBG-Based Power Electronic Circuits in Electric Vehicles"

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "E: Electric Vehicles".

Deadline for manuscript submissions: closed (30 December 2021) | Viewed by 3678

Special Issue Editors

Dr. Kamyar Mehran
E-Mail Website
Guest Editor
School of Electronics Engineering and Computer Science, Queen Mary University of London, London E1 4NS, UK
Interests: power system engineering; power electronics; control system; energy storage; nonlinear dynamics and fuzzy systems
Dr. Maher Al-Greer
E-Mail Website
Guest Editor
School of Computing, Engineering and Digital Technologies, Teesside University, Middlesbrough TS1 3BX, Cleveland, UK
Interests: system identification and intelligent control; power converter design and control; battery characterization
Special Issues, Collections and Topics in MDPI journals
Dr. Ozan Keysan
E-Mail Website
Guest Editor
Department of Electrical and Electronics Engineering, Middle East Technical University, Ankara, Turkey
Interests: integrated motor drives; fault tolerance; renewable energy applications; control of electrical machines

Special Issue Information

Dear Colleagues:

The emergence of wide bandgap (WBG) technology has provided designers with new features, such as high frequency operation (up to MHz range), more compact design, and higher temperature endurance (up to 150 °C). Considering each of these features, this technology is opening a new era for high-frequency power conversion, new automotive and aircraft technologies, and robust power electronics design in harsh climate environments, respectively. Additionally, reliable and robust performance has become a major pre-requisite in the new application of power electronics. Therefore, characterization of faults and monitoring device health are necessary in order to enable WBG-based power modules and devices to be employed in new power electronics applications. In this regard, reliable performance aspects require deep investigation to enable these technologies to be widely used in a new generation of power conversion.

This Special Issue aims to address some of the techniques, methodologies, and trends in characterization, monitoring, and elimination of probable faults in WBG-based power electronics circuits.

Dr. Kamyar Mehran
Dr. Maher Al-Greer
Dr. Ozan Keysan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • New trends and technologies of using WBG devices in power electronics circuits
  • Condition monitoring and fault characterization of WBG power devices/modules
  • New packaging designs for achieving more reliable performance
  • High-frequency power converters design and control based on WBG technology
  • Applications of Artificial Intelligence Techniques in WBG devices
  • Advanced Modelling and simulation techniques for WBG power devices
  • Advanced and digital control of power converters based on WBG devices
  • Sensor integration of power modules for health monitoring of the device

Published Papers (4 papers)

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Research

Article
Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique
Energies 2021, 14(21), 7397; https://doi.org/10.3390/en14217397 - 05 Nov 2021
Viewed by 474
Abstract
Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. In Short Circuit Fault (SCF), as the most reported failures in IGBTs, drastic, sudden temperature rise, and peak SCF current are widespread [...] Read more.
Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. In Short Circuit Fault (SCF), as the most reported failures in IGBTs, drastic, sudden temperature rise, and peak SCF current are widespread failures owing to a relatively long delay of the protection subsystem. This paper proposes a protection strategy to limit the junction temperature rise by limiting the SCF current by adding a small value resistor in the IGBT emitter. Second, it reduces the SCF current to a value much less than the saturated current. With the proposed control approach, sudden temperature rise during SCF is controlled, preventing significant failure in IGBTs. The extension of the permissible SCF time is achieved even for the cases with temporary arcs. A simple control loop activates in the SCF condition and does not create slow transients for the IGBT. The results of this paper are validated through simulation and experiment. Full article
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Article
High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules
Energies 2021, 14(20), 6720; https://doi.org/10.3390/en14206720 - 15 Oct 2021
Viewed by 545
Abstract
Current distribution anomaly can be used to indicate the onset of package-related failures modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the wire bond’s magnetic field profile using an array of Tunnel Magneto-Resistance (TMR) sensors, and characterise [...] Read more.
Current distribution anomaly can be used to indicate the onset of package-related failures modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the wire bond’s magnetic field profile using an array of Tunnel Magneto-Resistance (TMR) sensors, and characterise the small changes in the current density distribution to find the onset of the wire bond degradation processes, including wire bond lift-off, wire bond cracking, and wire bond fracture. We propose a novel condition monitoring technique where a non-galvanic high-bandwidth sensing and a reliability model monitor the health of the power switches. We designed a dedicated calibration set-up to examine the sensor array and calibrated to demonstrate the adequate sensitivity to a minimum 5% current anomaly detection in a single wire bond of the switching devices operating with 50 kHz switching frequency. We use a hardware-in-the-loop (HIL) experimental set-up to replicate wire bond-related failures in a 1200 V/55 A SiC MOSFET power module of a DC/DC Boost converter. Signal conditioning circuits are further designed to amplify and buffer the sensor readings. Experimental results showed the proposed technique is able to detect a wide range of package-related failures. Full article
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Article
Temperature Estimation of SiC Power Devices Using High Frequency Chirp Signals
Energies 2021, 14(16), 4912; https://doi.org/10.3390/en14164912 - 11 Aug 2021
Cited by 2 | Viewed by 730
Abstract
Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be used to determine the junction temperature, just like silicon-based power switches. [...] Read more.
Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be used to determine the junction temperature, just like silicon-based power switches. This paper presents a new technique to estimate the junction temperature of a single-chip silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET). During off-state operation, high-frequency chirp signals below the resonance frequency of the gate-source impedance are injected into the gate of a discrete SiC device. The gate-source voltage frequency response is captured and then processed using the fast Fourier transform. The data is then accumulated and displayed over the chirp frequency spectrum. Results show a linear relationship between the processed gate-source voltage and the junction temperature. The effectiveness of the proposed TSEPs is demonstrated in a laboratory scenario, where chirp signals are injected in a stand-alone biased discrete SiC module, and in an in-field scenario, where the TSEP concept is applied to a MOSFET operating in a DC/DC converter. Full article
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Article
Feasibility of Quasi-Square-Wave Zero-Voltage-Switching Bi-Directional DC/DC Converters with GaN HEMTs
Energies 2021, 14(10), 2867; https://doi.org/10.3390/en14102867 - 16 May 2021
Cited by 2 | Viewed by 1145
Abstract
There are trade-offs for each power converter design which are mainly dictated by the switching component and passive component ratings. Recent power electronic devices such as Gallium Nitride (GaN) transistors can improve the application range of power converter topologies with lower conduction and [...] Read more.
There are trade-offs for each power converter design which are mainly dictated by the switching component and passive component ratings. Recent power electronic devices such as Gallium Nitride (GaN) transistors can improve the application range of power converter topologies with lower conduction and switching losses. These new capabilities brought by the GaN High Electron Mobility Transistors (HEMTs) inevitably changes the feasible operation ranges of power converters. This paper investigates the feasibility of Buck and Boost based bi-directional DC/DC converter which utilizes Quasi-Square-Wave (QSW) Zero Voltage Switching (ZVS) on GaN HEMTs. The proposed converter applies a high-switching frequency at high output power to maximize the power density at the cost of high current ripple with high frequency of operation which requires a design strategy for the passive components. An inductor design methodology is performed to operate at 28 APP with a switching frequency of 450 kHz. In order to minimize the high ripple current stress on the output capacitors an interleaving is performed. Finally, the proposed bi-directional converter is operated at 5.4 kW with 5.24 kW/L or 85.9 W/in3 volumetric power density with air-forced cooling. The converter performance is verified for buck and boost modes and full load efficiencies are recorded as 97.7% and 98.7%, respectively. Full article
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