Advances in Computing-in-Memory Devices and Systems

Dear Colleagues,

The rapid development of artificial intelligence, edge computing, and data-intensive applications has created an urgent demand for computing paradigms that transcend the limitations of the conventional von Neumann architecture. The physical separation between processing and memory units requires frequent data transfer, resulting in substantial latency and energy consumption. Computing-in-memory, which integrates data storage and computation within the same physical platform, offers a promising approach to reducing data movement, improving energy efficiency, and enabling highly parallel information processing. Recent advances in emerging nonvolatile memory technologies, including resistive random-access memory, ferroelectric memory, phase-change memory, spin–orbit–torque magnetoresistive random-access memory, memristive devices, artificial synaptic devices, and other spintronic devices, have opened new opportunities for both digital and analog computing-in-memory systems.

This Special Issue aims to showcase recent advances in the materials, device physics, operating mechanisms, circuits, architectures, and system-level demonstrations of computing-in-memory devices and systems. Particular attention will be given to emerging memory materials, interface and defect engineering, switching mechanisms, device reliability, multilevel state modulation, highly linear synaptic behavior, and scalable integration strategies. Contributions addressing ferroelectric memories, resistive-switching memories, phase-change memories, spintronic memories, magnetic tunnel junctions, spin–orbit–torque devices, magnetic textures, memristive devices, and hybrid memory technologies are especially welcome. Topics of interest include, but are not limited to, the following:

• Spintronic materials and magnetic heterostructures for computing-in-memory devices;
• Charge–spin/orbital conversion mechanisms;
• Current-induced and voltage-controlled magnetization switching;
• Magnetic tunnel junctions and magnetoresistive random-access memory;
• Spintronic memristive and multistate magnetic devices;
• Magnetic skyrmions and other topological spin textures for information processing;
• Resistive switching and memristive computing;
• Ferroelectric and phase-change memory devices;
• Neuromorphic and artificial synaptic devices;
• Analog and digital computing-in-memory circuits and architectures;
• Reliability, endurance, retention, variability, and scalability;
• CMOS-compatible and heterogeneous integration.

We invite original research articles, reviews, and perspectives addressing the materials design, fundamental mechanisms, device implementation, circuit integration, and system-level applications of next-generation computing-in-memory technologies. Contributions that bridge fundamental advances in emerging memory and spintronic devices with practical, energy-efficient intelligent computing systems are particularly encouraged.

Dr. Shu Shi
Dr. Qihan Zhang
Prof. Dr. Zhenyi Zheng
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-anonymized peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

• computing-in-memory
• non-volatile memory
• memristors
• FeFET
• FeRAM
• neuromorphic computing
• spintronics
• charge–spin conversion
• spin–orbit coupling
• magnetic skyrmions