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Advanced Electronic Materials and Functional Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials, Devices and Applications".

Deadline for manuscript submissions: 15 November 2026 | Viewed by 586

Editors


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Guest Editor
School of Chips, Xi’an Jiaotong-Liverpool University, Taicang, Suzhou 215400, China
Interests: advanced functional thin films and their integration into micro-/nano-devices for applications in spintronics, memory, sensors, and MEMS

E-Mail Website
Guest Editor
1. School of Chips, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, Suzhou 215400, China
2. Department of Physics, Faculty of Science, Fayoum University, Fayoum 63514, Egypt
Interests: all-optical logic devices and circuits; semiconductor optical amplifiers; silicon photonic devices; microring resonators; photonic device integration
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
School of Chips, Xi’an Jiaotong-Liverpool University, Taicang, Suzhou 215400, China
Interests: sesnors; antenna; nanotechnology; CHIPS

Special Issue Information

Dear Colleagues,

The relentless progress in electronics is fundamentally driven by innovations in materials and the clever design of devices that harness their properties. From the ever-shrinking dimensions of silicon-based logic to the emergence of entirely new computing and sensing paradigms, the field is in a constant state of evolution. This Special Issue of Electronics, titled "Advanced Electronic Materials and Functional Devices," aims to capture the latest breakthroughs in this dynamic landscape. It is guest-edited by Jang Yong Kim and Amer Kotb, whose complementary research in micro-nanofabricated functional systems and all-optical photonic devices provide a comprehensive perspective of the field.

(1) Focus, Scope, and Purpose

  1. Focus: The primary focus of this collection is on the synergistic relationship between advanced materials and the high-performance electronic and photonic devices they enable. We are particularly interested in work that demonstrates a clear path from material innovation to device functionality and potential system-level integration.
  2. Scope: The scope is broad and interdisciplinary, welcoming contributions on, but not limited to, the following topics:
  • Semiconductor Materials and Devices: Silicon photonics, high-mobility channel materials (e.g., 2D materials, III-V compounds), and advanced transistor architectures.
  • Photonic and Optoelectronic Devices: All-optical logic gates, optical amplifiers (SOAs, EDFAs), modulators, photodetectors, and their integration with electronic circuits. This directly aligns with Dr. Kotb’s expertise in simulating all-optical logic devices using silicon and metamaterial waveguides.
  • Memory and Logic Technologies: Emerging non-volatile memories (e.g., memristors, phase-change memory, MRAM), in-memory computing concepts, and devices for neuromorphic computing, reflecting Dr. Kim’s experience with memristors and memory technologies.
  • Functional and Multifunctional Materials: Ferroelectrics, multiferroics, ferromagnets, and superconductors for applications in spintronics, RF/microwave components, and novel sensors, drawing from Dr. Kim’s extensive background in these areas.
  • MEMS/NEMS and Sensor Technologies: Micro- and nano-electromechanical systems (MEMS/NEMS), physical sensors, chemical sensors, and bioelectronics for wearable and biomedical applications.
  • Modeling and Simulation: Theoretical investigations and computational modeling of material properties, device physics, and circuit-level performance, which is a cornerstone of Dr. Kotb’s research methodology.
  • RF-based Sensors for Healthcare Applications, RFID and Advanced Antennas for Communication Applications, Nanotechnology, RF Imaging, On-CHIP Antennas and devices drawing from Dr. Kandwal’s extensive background in these areas.
  1. Purpose: The purpose of this Special Issue is to curate a collection of high-quality original research articles and comprehensive reviews that highlight the latest advancements in the field. We aim to foster a discussion on the challenges and opportunities in translating the unique properties of advanced materials into reliable, high-performance devices for computing, communication, sensing, and beyond.

(2) Relationship to Existing Literature

While the existing literature extensively covers individual topics like silicon photonics, spintronics, or memristors, this collection is designed to supplement the current body of knowledge by emphasizing the convergence and integration of these fields. Often, breakthroughs occur at the interfaces—for example, combining ferroelectric materials with silicon photonics for novel modulators, or integrating 2D materials with MEMS for ultra-sensitive sensors. By bringing together contributions from leading researchers in these interconnected domains, this Special Issue will provide a holistic view of how different material systems and device concepts can complement each other. It will not only present deep dives into specialized areas but also highlight the cross-cutting themes, such as the importance of thin-film growth, nanofabrication, and multi-physics simulation, that are common to advancing the entire field of electronic materials and devices.

We cordially invite you to contribute your latest findings and join us in creating a valuable resource for the scientific community.

Dr. Jang Yong Kim
Prof. Dr. Amer Kotb
Dr. Abhishek Kandwal
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-anonymized peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • advanced electronic materials
  • semiconductor devices
  • photonic devices
  • all-optical logic
  • silicon photonics
  • spintronics
  • memristors
  • memory technologies
  • micro- and nano-fabrication (MEMS/NEMS)
  • sensors and bioelectronics
  • ferroelectrics and multiferroics
  • metamaterials
  • antennas
  • device modeling and simulation

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Published Papers (1 paper)

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Research

37 pages, 2151 KB  
Article
Performance Assessment of All-Optical NAND and XNOR Gates at 120 Gb/s Using a Single Optically Pumped Semiconductor Optical Amplifier Mach–Zehnder Interferometer
by Amer Kotb and Kyriakos E. Zoiros
Electronics 2026, 15(14), 3217; https://doi.org/10.3390/electronics15143217 - 21 Jul 2026
Viewed by 286
Abstract
This paper presents a numerical investigation of all-optical NAND and XNOR logic gates implemented with a single optically pumped semiconductor optical amplifier integrated into a Mach–Zehnder interferometer (OP-SOA-MZI) at 120 Gb/s. Conventional approaches require two cascaded MZI stages to obtain both logic functions. [...] Read more.
This paper presents a numerical investigation of all-optical NAND and XNOR logic gates implemented with a single optically pumped semiconductor optical amplifier integrated into a Mach–Zehnder interferometer (OP-SOA-MZI) at 120 Gb/s. Conventional approaches require two cascaded MZI stages to obtain both logic functions. The present work demonstrates that a single OP-SOA-MZI suffices for both gates under appropriate operating conditions. The quality factor (QF) serves as the primary performance metric. The NAND gate yields a QF of 28.6, while the XNOR gate yields a QF of 18.7. A comparison with the conventional electrically pumped SOA–MZI (EP-SOA–MZI) configuration shows that the OP-SOA–MZI architecture consistently produces higher QF values and exhibits superior tolerance to noise and high-speed operation. This improvement stems from enhanced carrier replenishment and improved phase stability provided by optical pumping. The study further examines the dependence of the QF on five operational parameters: absorption coefficient, pump power, data rate, phase noise, and amplified spontaneous emission noise. The results quantify the parametric sensitivity of each logic gate and establish operating regimes for reliable high-speed performance. Full article
(This article belongs to the Special Issue Advanced Electronic Materials and Functional Devices)
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