Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
3.6
2.7
Journals
Crystals
Special Issues
Novel Semiconductor Materials for Optoelectronic Applications
share announcement

Novel Semiconductor Materials for Optoelectronic Applications

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (20 July 2023) | Viewed by 6311

Special Issue Editors

Dr. Gang Tang

E-Mail Website
Guest Editor
Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, China
Interests: optoelectronic; density functional theory; ferroelectricity; piezoelectricity; machine learning
Special Issues, Collections and Topics in MDPI journals
Dr. Chunbao Feng

E-Mail Website
Guest Editor
School of Science, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
Interests: defect physics in the perovskite-based solar cell absorbers; electronic structure and geometry of grain boundaries of Inorganic photovoltaic materials; defect physics in semiconductors; photoelectrochemical water splitting
Dr. Peng Lv

E-Mail Website
Guest Editor
International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng, China
Interests: first-principles calculations; atomically dispersed catalysts; ferroelectricity; electronic structure
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Over the past few decades, halide perovskites ABX3 (A+ = CH3NH3, CH(NH2)2, Cs; B2+ = Pb, Sn, Ge; X- = Cl, Br, I) have achieved great success in the fields of solar cells, light-emitting diodes, and X-ray/radiation detectors due to their excellent optoelectronic properties, low cost, and simple manufacture. For example, the power conversion efficiency (PCE) of perovskite solar cells has exceeded 25%. Despite the significant progress achieved in halide perovskites-based optoelectronic devices, however, challenges remain in further improving their performance and addressing stability issues to enable future commercialization. As a result, many new semiconductor materials have also been experimentally synthesized or theoretically predicted to replace lead-based halide perovskites in recent years. In this Special Issue, entitled “Novel Semiconductor Materials for Optoelectronic Applications”, researchers will have the opportunity to publish their novel findings related to recent advances in the application of novel semiconductor materials in various optoelectronic devices, including materials development, device characterization, mechanism exploration, theoretical simulation, and so on. We aim to cover a wide range of novel semiconductor materials, including halide perovskites, chalcogenide perovskites, nitride perovskites, perovskite derivatives, and anti-perovskite semiconductors. Both original experimental and theoretical research will be considered.

Dr. Gang Tang
Dr. Chunbao Feng
Dr. Peng Lv
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronic devices
  • photovoltaic performance
  • optoelectronic properties
  • halide perovskites
  • perovskite semiconductors

Published Papers (3 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

12 pages, 5113 KiB  
Article
Tunable Electronic Property and Robust Type-II Feature in Blue Phosphorene/MoSi2N4 Bilayer Heterostructure
by Xiaolin Cai, Zhengwen Zhang, Guoxing Chen, Qin Wang and Yu Jia
Crystals 2022, 12(10), 1407; https://doi.org/10.3390/cryst12101407 - 5 Oct 2022
Cited by 2 | Viewed by 1472
Abstract
Constructing novel van der Waals heterostructures (vdWHs) is one of the effective methods for expanding the properties and applications of single materials. In this contribution, a blue phosphorene (Blue P)/MoSi2N4 vertical bilayer vdWH was constructed, and its crystal and electronic [...] Read more.
Constructing novel van der Waals heterostructures (vdWHs) is one of the effective methods for expanding the properties and applications of single materials. In this contribution, a blue phosphorene (Blue P)/MoSi2N4 vertical bilayer vdWH was constructed, and its crystal and electronic structures as well as optical properties were systematically studied via first principles calculation. It was found that the Blue P/MoSi2N4 vdWH with good thermal and dynamic stabilities belongs to the type-II indirect bandgap semiconductor with the bandgap of 1.92 eV, which can efficiently separate electrons and holes. Additionally, the two band edges straddle the redox potential of water, and the charge transfer follows the Z-scheme mode, making the Blue P/MoSi2N4 vdWH a promising catalyst of hydrogen production through splitting water. Meanwhile, the Blue P/MoSi2N4 vdWH has higher optical absorption than its two component monolayers. Both the external electric field and vertical strain can easily tailor the bandgap of Blue P/MoSi2N4 vdWH while still preserving its type-II heterostructure characteristics. Our proposed Blue P/MoSi2N4 vdWH is a promising photovoltaic two-dimensional material, and our findings provided theoretical support for the related experimental exploration. Full article
(This article belongs to the Special Issue Novel Semiconductor Materials for Optoelectronic Applications)
►▼ Show Figures

Figure 1

9 pages, 2966 KiB  
Article
Tunable Band Alignment in the Arsenene/WS2 Heterostructure by Applying Electric Field and Strain
by Fang Zhang, Xianqi Dai, Liangliang Shang and Wei Li
Crystals 2022, 12(10), 1390; https://doi.org/10.3390/cryst12101390 - 30 Sep 2022
Cited by 4 | Viewed by 1429
Abstract
Arsenene has received considerable attention because of its unique optoelectronic and nanoelectronic properties. Nevertheless, the research on van der Waals (vdW) heterojunctions based on arsenene has just begun, which hinders the application of arsenene in the optoelectronic and nanoelectronic fields. Here, we systemically [...] Read more.
Arsenene has received considerable attention because of its unique optoelectronic and nanoelectronic properties. Nevertheless, the research on van der Waals (vdW) heterojunctions based on arsenene has just begun, which hinders the application of arsenene in the optoelectronic and nanoelectronic fields. Here, we systemically predict the stability and electronic structures of the arsenene/WS2 vdW heterojunction based on first-principles calculations, considering the stacking pattern, electric field, and strain effects. We found that the arsenene/WS2 heterostructure possesses a type-II band alignment. Moreover, the electric field can effectively tune both the band gap and the band alignment type. Additionally, the band gap could be tuned effectively by strain, while the band alignment type is robust under strain. Our study opens up a new avenue for the application of ultrathin arsenene-based vdW heterostructures in future nano- and optoelectronics applications. Our study demonstrates that the arsenene/WS2 heterostructure offers a candidate material for optoelectronic and nanoelectronic devices. Full article
(This article belongs to the Special Issue Novel Semiconductor Materials for Optoelectronic Applications)
►▼ Show Figures

Figure 1

9 pages, 2351 KiB  
Article
High-Efficiency Tandem White Perovskite Light-Emitting Diodes by Using an Organic/Inorganic Intermediate Connector
by Yu Yan, Qi Zhang, Zhijian Wang, Qifeng Du, Ruitao Tang and Xiaoyu Wang
Crystals 2022, 12(9), 1286; https://doi.org/10.3390/cryst12091286 - 12 Sep 2022
Cited by 2 | Viewed by 2074
Abstract
The performance of monochromatic perovskite light-emitting diodes (PeLEDs) has undergone rapid development in recent years, while white PeLEDs are still in their infancy. The tandem devices prepared by connecting light-emitting units of different colors with intermediate connectors comprise one of the promising approaches [...] Read more.
The performance of monochromatic perovskite light-emitting diodes (PeLEDs) has undergone rapid development in recent years, while white PeLEDs are still in their infancy. The tandem devices prepared by connecting light-emitting units of different colors with intermediate connectors comprise one of the promising approaches for realizing white light emission. The intermediate connector plays a crucial role in determining the effectiveness of the light-emitting units. In this work, all-perovskite-based white LEDs are assembled by employing sky-blue (490 nm) and red (690 nm) perovskite emitters as active layers. With mixed p-type and n-type organic charge transport materials as the intermediate connector, the highest external quantum efficiency (EQE) of the device was 1.4%, the electroluminescence (EL) peak position of the blue light part was shifted to 512 nm, and the red light part was shifted to 673 nm. In contrast, with organic and inorganic charge transport materials as the intermediate connector, the devices exhibited better charge generation/injection capabilities and a record EQE of 8.5%. The EL peak position of the device prepared from the stored film was not shifted, implying that the organic/inorganic layer effectively suppresses halide migration. Our work paves the way for highly efficient tandem white PeLEDs. Full article
(This article belongs to the Special Issue Novel Semiconductor Materials for Optoelectronic Applications)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-3
Back to TopTop