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Crystals
Special Issues
II-VI and III-V Semiconductors for Optoelectronic Devices
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II-VI and III-V Semiconductors for Optoelectronic Devices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: 30 July 2025 | Viewed by 1803

Special Issue Editors

Dr. Yi Zhang

E-Mail Website
Guest Editor
College of Renewable Energy, Hohai University, Nanjing, China
Interests: thermalization mechanism; ultrafast carrier dynamics; hot carrier solar cells; III-V quantum well structure; thermal photovoltaic solar cells; III-V bulk semiconductors; perovskite photovoltaic materials
Special Issues, Collections and Topics in MDPI journals
Dr. Ziyuan Li

E-Mail Website
Guest Editor
MoE Key Lab of Photoelectronic Imaging Technology and System, Beijing Institute of Technology, Beijing, China
Interests: optoelectronics; semiconductor; plasmonics

Special Issue Information

Dear Colleagues,

The development of fundamental theories, such as solid-state physics, quantum mechanics and energy band theory, not only accelerates the advancement of semiconductor physics but also makes semiconductor device manufacturing gradually progress to energy band engineering-based device manufacturing. Compared with traditional silicon-based semiconductors, III-V group compound semiconductors represented by GaAs, GaP and InP possess a high band-gap width, electron mobility and electron saturation rate, making them more applicable for high-speed, high-frequency and high-power optoelectronic devices under high temperatures and intense irradiance conditions. Moreover, the low-dimensional limited structure materials consisting of II-VI group semiconductors, such as CdS, CdTe and CdSe, further diversify material systems for optoelectronic devices. These devices are widely used in semiconductor lighting, power electronic devices, lasers, chemical and biological detection and photovoltaic solar cells, inducing a series of scientific problems in the interdisciplinary field of physics, optics, material sciences, optoelectronics, and so on. 

This Special Issue aims to collect the latest research progress of such semiconductors in the fields of solid-state physics, optics and optoelectronics, and explore relevant basic scientific theories and practical technical applications.

Dr. Yi Zhang
Dr. Ziyuan Li
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • II-VI semiconductors
  • III-V semiconductors
  • solid-state physics
  • optics
  • optoelectronics
  • lasers
  • detectors
  • photovoltaic solar cells
  • ultrafast carrier dynamics

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Published Papers (2 papers)

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Research

9 pages, 1589 KiB  
Article
Design of GaN-Based Laser Diode Structures with Nonuniform Doping Distribution in a p-AlGaN Cladding Layer for High-Efficiency Operation
by Chibuzo Onwukaeme and Han-Youl Ryu
Crystals 2025, 15(3), 259; https://doi.org/10.3390/cryst15030259 - 11 Mar 2025
Viewed by 485
Abstract
In GaN-based laser diode (LD) structures, it is essential to optimize the doping concentration and profiles in p-type-doped layers because of the trade-off between laser power and operation voltage as the doping concentration varies. In this study, we proposed GaN-based blue LD structures [...] Read more.
In GaN-based laser diode (LD) structures, it is essential to optimize the doping concentration and profiles in p-type-doped layers because of the trade-off between laser power and operation voltage as the doping concentration varies. In this study, we proposed GaN-based blue LD structures with nonuniform doping distributions in the p-AlGaN cladding layer to reduce the modal loss and demonstrated improved efficiency characteristics using numerical simulations. We compared the laser power, operation voltage, and wall-plug efficiency (WPE) of LDs with uniform, linear, and quadratic doping profiles in the p-AlGaN cladding layer. As the doping concentration becomes increasingly inhomogeneous, the laser output power increases significantly because of the reduced overlap of the laser mode with the p-AlGaN cladding layer. However, this nonuniform doping profile also leads to an increase in the operation voltage due to the expansion of the low-doping region. By optimizing the nonuniform doping distribution in the p-type cladding layer, the WPE was found to be improved by over 5% compared to a conventional uniformly doped p-cladding layer. The proposed design of LD structures is expected to enhance the efficiency of high-power GaN-based LDs. Full article
(This article belongs to the Special Issue II-VI and III-V Semiconductors for Optoelectronic Devices)
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11 pages, 2792 KiB  
Communication
Characterization of Crystal Properties and Defects in CdZnTe Radiation Detectors
by Manuel Ballester, Jaromir Kaspar, Francesc Massanés, Srutarshi Banerjee, Alexander Hans Vija and Aggelos K. Katsaggelos
Crystals 2024, 14(11), 935; https://doi.org/10.3390/cryst14110935 - 29 Oct 2024
Cited by 2 | Viewed by 965
Abstract
CdZnTe-based detectors are highly valued because of their high spectral resolution, which is an essential feature for nuclear medical imaging. However, this resolution is compromised when there are substantial defects in the CdZnTe crystals. In this study, we present a learning-based approach to [...] Read more.
CdZnTe-based detectors are highly valued because of their high spectral resolution, which is an essential feature for nuclear medical imaging. However, this resolution is compromised when there are substantial defects in the CdZnTe crystals. In this study, we present a learning-based approach to determine the spatially dependent bulk properties and defects in semiconductor detectors. This characterization allows us to mitigate and compensate for the undesired effects caused by crystal impurities. We tested our model with computer-generated noise-free input data, where it showed excellent accuracy, achieving an average RMSE of 0.43% between the predicted and the ground truth crystal properties. In addition, a sensitivity analysis was performed to determine the effect of noisy data on the accuracy of the model. Full article
(This article belongs to the Special Issue II-VI and III-V Semiconductors for Optoelectronic Devices)
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