Sintering additives play a decisive role in the densification behavior, mechanical properties, and thermal conductivity of silicon nitride ceramics. In this study, Mg
2Si and YH
2 were used as sintering additives for gas pressure sintering of silicon nitride based on the
[...] Read more.
Sintering additives play a decisive role in the densification behavior, mechanical properties, and thermal conductivity of silicon nitride ceramics. In this study, Mg
2Si and YH
2 were used as sintering additives for gas pressure sintering of silicon nitride based on the synergistic mechanism of “silicide silicon extraction-hydride dehydrogenation”. The regulation rules of the additives on ceramic densification, mechanical properties, and thermal conductivity were systematically investigated. Two optimization strategies were proposed for the technical route of replacing traditional oxide additives with non-oxide systems. (i) Rare-earth hydride YH
2 was used to replace traditional rare-earth oxides. It reacts with SiO
2 to achieve strong deoxidation and precisely regulate the liquid phase composition. (ii) Metal silicide Mg
2Si was used to replace metal oxides. It promotes the preferred growth of β-Si
3N
4 grains, consumes oxygen in the system, and reduces lattice defects. Mg
2Si introduces Si into the liquid phase, increasing the Si/O ratio, which lowers lattice oxygen content and supports higher thermal conductivity. YH
2 consumes SiO
2 on the Si
3N
4 surface, which reduces liquid phase oxygen content and inhibits lattice oxygen incorporation, promoting a liquid phase with a high N/O ratio. Compared with traditional Y
2O
3, YH
2 increases the Y
2O
3/SiO
2 ratio in the liquid phase. It promotes grain growth, reduces SiO
2 activity, and further improves the thermal conductivity of ceramics. Silicon nitride ceramics prepared by gas pressure sintering at 1750 °C with 3 wt.% Mg
2Si and 4 wt.% YH
2 composite additives exhibit the highest thermal conductivity of 87 W/(m·K), with a Vickers hardness of 14.36 GPa and a flexural strength of 643.15 MPa. This study provides an innovative idea for the preparation of high-performance silicon nitride heat dissipation substrates.
Full article