The surface microstructure of an activated Si-containing AB
2 metal hydride (MH) alloy was investigated by transmission electron microscopy (TEM) and X-ray energy dispersive spectroscopy (EDS). Regions of the main AB
2 and the secondary TiNi (B2 structure) phases directly underneath the surface
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The surface microstructure of an activated Si-containing AB
2 metal hydride (MH) alloy was investigated by transmission electron microscopy (TEM) and X-ray energy dispersive spectroscopy (EDS). Regions of the main AB
2 and the secondary TiNi (B2 structure) phases directly underneath the surface Zr oxide/hydroxide layers are considered electrochemically inactive. The surface of AB
2 is covered, on the atomic scale, by sheets of Ni
2O
3 with direct access to electrolyte and voids, without the buffer oxide commonly seen in Si-free AB
2 alloys. This clean oxide/bulk metal alloy interface is believed to be the main source of the improvements in the low-temperature performance of Si-containing AB
2 alloys. Sporadic metallic-Ni clusters can be found in the surface Ni
2O
3 region. However, the density of these clusters is much lower than the Ni-inclusions found in most typical metal hydride surface oxides. A high density of nano-sized metallic Ni-inclusions (1–3 nm) is found in regions associated with the TiNi secondary phase,
i.e., in the surface oxide layer and in the grain boundary, which can also contribute to enhancement of the electrochemical performance.
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