Geng, M.; Guo, J.; Sun, Y.; Gao, D.; Ni, D. Accurate and Efficient Process Modeling and Inverse Optimization for Trench Metal Oxide Semiconductor Field Effect Transistors: A Machine Learning Proxy Approach. Processes 2025, 13, 1544. https://doi.org/10.3390/pr13051544

AMA Style

Geng M, Guo J, Sun Y, Gao D, Ni D. Accurate and Efficient Process Modeling and Inverse Optimization for Trench Metal Oxide Semiconductor Field Effect Transistors: A Machine Learning Proxy Approach. Processes. 2025; 13(5):1544. https://doi.org/10.3390/pr13051544

Chicago/Turabian Style

Geng, Mingqiang, Jianming Guo, Yuting Sun, Dawei Gao, and Dong Ni. 2025. "Accurate and Efficient Process Modeling and Inverse Optimization for Trench Metal Oxide Semiconductor Field Effect Transistors: A Machine Learning Proxy Approach" Processes 13, no. 5: 1544. https://doi.org/10.3390/pr13051544

APA Style

Geng, M., Guo, J., Sun, Y., Gao, D., & Ni, D. (2025). Accurate and Efficient Process Modeling and Inverse Optimization for Trench Metal Oxide Semiconductor Field Effect Transistors: A Machine Learning Proxy Approach. Processes, 13(5), 1544. https://doi.org/10.3390/pr13051544

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