Volodin, V.A.; Geydt, P.; Kamaev, G.N.; Gismatulin, A.A.; Krivyakin, G.K.; Prosvirin, I.P.; Azarov, I.A.; Fan, Z.; Vergnat, M.
Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters. Electronics 2020, 9, 2103.
https://doi.org/10.3390/electronics9122103
AMA Style
Volodin VA, Geydt P, Kamaev GN, Gismatulin AA, Krivyakin GK, Prosvirin IP, Azarov IA, Fan Z, Vergnat M.
Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters. Electronics. 2020; 9(12):2103.
https://doi.org/10.3390/electronics9122103
Chicago/Turabian Style
Volodin, Vladimir A., Pavel Geydt, Gennadiy N. Kamaev, Andrei A. Gismatulin, Grigory K. Krivyakin, Igor P. Prosvirin, Ivan A. Azarov, Zhang Fan, and Michel Vergnat.
2020. "Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters" Electronics 9, no. 12: 2103.
https://doi.org/10.3390/electronics9122103
APA Style
Volodin, V. A., Geydt, P., Kamaev, G. N., Gismatulin, A. A., Krivyakin, G. K., Prosvirin, I. P., Azarov, I. A., Fan, Z., & Vergnat, M.
(2020). Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters. Electronics, 9(12), 2103.
https://doi.org/10.3390/electronics9122103